Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET VDS (V) rDS(on) () ID (A) 0.053 @ VGS = –10 V –4.9 0.090 @ VGS = –4.5 V –3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2 P-Channel MOSFET Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS –30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C) 150 C)a TA = 25C V –4.9 –3.7 –3.9 –2.9 ID TA = 70C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25C Maximum Power Dissipationa Unit TA = 70C Operating Junction and Storage Temperature Range PD A –30 –1.7 –0.9 2.0 1.1 1.3 0.7 W TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t 10 sec Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 52 62.5 90 110 32 40 Unit C/W Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 71091 S-015393—Rev. B, 17-Jul-00 www.vishay.com FaxBack 408-970-5600 2-1 Si4953ADY New Product Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –1 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta VDS = 0 V, VGS = "20 V ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 55C –25 VDS = –5 V, VGS = –10 V rDS(on) Forward Transconductancea V nA mA –30 A VGS = –10 V, ID = –4.9 A 0.045 0.053 VGS = –4.5 V, ID = –3.7 A 0.075 0.090 gfs VDS = –10 V, ID = –4.9 A 9 VSD IS = –1.7 A, VGS = 0 V –0.8 –1.2 15 25 W S V Dynamicb Total Gate Charge Qg VDS = –15 15 V V, VGS = –10 10 V V, ID = –4.9 49A nC C Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 Turn-On Delay Time td(on) 7 15 10 20 40 80 20 40 30 60 Rise Time tr Turn-Off Delay Time VDD = –15 15 V V,, RL = 15 W ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 4 IF = –1.7 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 7 V TC = –55C 6V 24 25C 24 I D – Drain Current (A) I D – Drain Current (A) 5V 18 12 4V 6 18 125C 12 6 3V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-2 3.5 4.0 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Document Number: 71091 S-015393—Rev. B, 17-Jul-00 Si4953ADY New Product Vishay Siliconix Capacitance On-Resistance vs. Drain Current 1500 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 0.20 0.15 VGS = 4.5 V 0.10 1200 Ciss 900 600 VGS = 10 V 0.05 Coss 300 Crss 0 0 0 6 12 18 24 0 30 6 ID – Drain Current (A) 18 24 30 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 10 1.6 VDS = 15 V ID = 4.9 A r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 12 8 6 4 2 VGS = 10 V ID = 4.9 A 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 –50 20 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 30 r DS(on) – On-Resistance ( ) I S – Source Current (A) 0.35 TJ = 150C 10 TJ = 25C 0.30 0.25 ID = 4.9 A 0.20 0.15 0.10 0.05 0 1 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71091 S-015393—Rev. B, 17-Jul-00 1.2 1.4 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-3 Si4953ADY New Product Vishay Siliconix Threshold Voltage Single Pulse Power 0.8 50 40 ID = 250 mA 0.4 Power (W) V GS(th) Variance (V) 0.6 0.2 30 20 0.0 10 –0.2 –0.4 –50 –25 0 25 50 75 100 125 150 0 10–3 10–2 10–1 TJ – Temperature (C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 www.vishay.com FaxBack 408-970-5600 2-4 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71091 S-015393—Rev. B, 17-Jul-00