VISHAY SI5406DC

Si5406DC
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
12
rDS(on) (Ω)
ID (A)
0.020 @ VGS = 4.5 V
9.5
0.025 @ VGS = 2.5 V
8.5
D TrenchFETr Power MOSFETS: 2.5-V Rated
D Low Thermal Resistance
APPLICATIONS
D Load/Power Switching for Cell Phones and
Pagers
D PA Switch in Cellular Devices
D Battery Operated Systems
1206-8 ChipFETt
t
D
1
D
D
D
D
D
D
G
S
G
Marking Code
AC
XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
S
N-Channel MOSFET
Ordering Information: Si5406DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
12
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
9.5
6.9
6.8
4.9
IDM
20
2.1
1.1
2.5
1.3
1.3
0.7
TJ, Tstg
--55 to 150
Soldering Recommendations (Peak Temperature)b, c
Unit
A
W
_C
260
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
80
95
15
20
Unit
_C/W
C/
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71657
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
Si5406DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 1.2 mA
0.6
IGSS
VDS = 0 V, VGS = 8 V
100
VDS = 9.6 V, VGS = 0 V
1
VDS = 9.6 V, VGS = 0 V, TJ = 85_C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
20
VDS ≥ 5 V, VGS = 4.5 V
rDS(on)
V
nA
mA
A
VGS = 4.5 V, ID = 6.9 A
0.017
0.020
VGS = 2.5 V, ID = 2 A
0.021
0.025
gfs
VDS = 10 V, ID = 6.9 A
30
VSD
IS = 1.1 A, VGS = 0 V
0.7
1.2
13.7
20
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
4.1
Turn-On Delay Time
td(on)
17
25
46
70
54
80
29
45
35
70
Rise Time
VDS = 6 V, VGS = 4.5 V, ID = 6.9 A
tr
Turn-Off Delay Time
VDD = 6 V, RL = 6 Ω
ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
2.3
IF = 1.1 A, di/dt = 100 A/ms
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
VGS = 5 thru 2.5 V
2V
16
I D -- Drain Current (A)
I D -- Drain Current (A)
15
10
5
1.5 V
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS -- Drain-to-Source Voltage (V)
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2-2
3.5
12
8
TC = 125_C
4
25_C
4.0
0
0.0
0.5
1.0
--55_C
1.5
2.0
2.5
VGS -- Gate-to-Source Voltage (V)
Document Number: 71657
S-21251—Rev. B, 05-Aug-02
Si5406DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1800
1500
0.024
C -- Capacitance (pF)
r DS(on) -- On-Resistance ( Ω )
0.030
VGS = 2.5 V
VGS = 4.5 V
0.018
0.012
Ciss
1200
900
600
Coss
Crss
0.006
300
0.000
0
0
4
8
12
16
0
20
3
ID -- Drain Current (A)
Gate Charge
12
On-Resistance vs. Junction Temperature
1.4
VDS = 6 V
ID = 6.9 A
r DS(on) -- On-Resistance (Ω)
(Normalized)
V GS -- Gate-to-Source Voltage (V)
9
VDS -- Drain-to-Source Voltage (V)
5
4
3
2
1
VGS = 4.5 V
ID = 6.9 A
1.3
1.2
1.1
1.0
0.9
0
0
4
8
12
0.8
--50
16
--25
0
Qg -- Total Gate Charge (nC)
25
50
75
100
125
150
TJ -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.035
20
TJ = 150_C
0.030
r DS(on) -- On-Resistance ( Ω )
I S -- Source Current (A)
6
10
TJ = 25_C
ID = 6.9 A
0.025
0.020
0.015
0.010
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
VSD -- Source-to-Drain Voltage (V)
Document Number: 71657
S-21251—Rev. B, 05-Aug-02
1.2
1.4
0
1
2
3
4
5
VGS -- Gate-to-Source Voltage (V)
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2-3
Si5406DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.2
50
40
ID = 1.2 mA
--0.0
Power (W)
V GS(th) Variance (V)
0.1
--0.1
30
20
--0.2
10
--0.3
--0.4
--50
--25
0
25
50
75
100
125
150
0
10 --3
10 --2
10 --1
TJ -- Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80_C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 --4
10 --3
10 --2
10 --1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 --4
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2-4
10 --3
10 --2
10 --1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71657
S-21251—Rev. B, 05-Aug-02