VISHAY SI5902DC

Si5902DC
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (Ω)
ID (A)
0.085 @ VGS = 10 V
3.9
0.143 @ VGS = 4.5 V
3.0
D1
1206-8 ChipFETt
D2
1
S1
D1
G1
D1
S2
D2
G1
G2
D2
G2
Marking Code
CA XX
Lot Traceability
and Date Code
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Part # Code
Bottom View
Ordering Information: Si5902DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
3.9
2.9
2.8
2.1
IDM
10
1.8
0.9
2.1
1.1
1.1
0.6
TJ, Tstg
--55 to 150
Soldering Recommendations (Peak Temperature)b, c
Unit
A
W
_C
260
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot
Symbol
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
50
60
90
110
30
40
Unit
_C/W
C/
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71053
S-21251—Rev. A, 05-Aug-02
www.vishay.com
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Si5902DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = 20 V
100
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 85_C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
10
VDS ≥ 5 V, VGS = 10 V
rDS(on)
V
nA
mA
A
VGS = 10 V, ID = 2.9 A
0.072
0.085
VGS = 4.5 V, ID = 2.2 A
0.120
0.143
gfs
VDS = 15 V, ID = 2.9 A
20
VSD
IS = 0.9 A, VGS = 0 V
0.8
1.2
5
7.5
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.0
Turn-On Delay Time
td(on)
7
11
12
18
12
18
7
11
40
80
Rise Time
VDS = 15 V, VGS = 10 V, ID = 2.9 A
tr
Turn-Off Delay Time
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
0.8
IF = 0.9 A, di/dt = 100 A/ms
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10
10
VGS = 10 thru 5 V
8
6
I D -- Drain Current (A)
I D -- Drain Current (A)
8
4V
4
2
0
0.0
3V
4
TC = 125_C
2
25_C
--55_C
0
0.5
1.0
1.5
2.0
2.5
VDS -- Drain-to-Source Voltage (V)
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2-8
6
3.0
0
1
2
3
4
5
VGS -- Gate-to-Source Voltage (V)
Document Number: 71053
S-21251—Rev. A, 05-Aug-02
Si5902DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
400
Ciss
C -- Capacitance (pF)
r DS(on) -- On-Resistance ( Ω )
0.20
0.15
VGS = 4.5 V
0.10
VGS = 10 V
0.05
300
200
Coss
100
Crss
0.00
0
0
2
4
6
8
10
0
6
ID -- Drain Current (A)
18
24
30
VDS -- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
1.8
10
VDS = 15 V
ID = 2.9 A
r DS(on) -- On-Resistance (Ω)
(Normalized)
V GS -- Gate-to-Source Voltage (V)
12
8
6
4
2
VGS = 10 V
ID = 2.9 A
1.6
1.4
1.2
1.0
0.8
0
0
1
2
3
4
0.6
--50
5
--25
0
Qg -- Total Gate Charge (nC)
50
75
100
125
150
TJ -- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
r DS(on) -- On-Resistance ( Ω )
I S -- Source Current (A)
10
TJ = 150_C
TJ = 25_C
1
0.0
25
0.15
ID = 2.9 A
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
VSD -- Source-to-Drain Voltage (V)
Document Number: 71053
S-21251—Rev. A, 05-Aug-02
1.2
0
2
4
6
8
10
VGS -- Gate-to-Source Voltage (V)
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Si5902DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
40
ID = 250 mA
--0.0
Power (W)
V GS(th) Variance (V)
0.2
--0.2
30
20
--0.4
10
--0.6
--0.8
--50
--25
0
25
50
75
100
125
150
0
10 --4
10 --3
10 --2
TJ -- Temperature (_C)
10 --1
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90_C/W
0.01
10 --4
1000
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
10 --3
10 --2
10 --1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 --4
10 --3
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2-10
10 --2
10 --1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71053
S-21251—Rev. A, 05-Aug-02