Si6542DQ Vishay Siliconix Dual N- and P-Channel 20-V (D-S) MOSFET VDS (V) N-Channel ID (A) 0.09 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 1.8 0.17 @ VGS = –10 V 1.9 0.32 @ VGS = –4.5 V 1.3 20 P-Channel rDS(on) () –20 D1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 Si6542DQ G2 G1 Top View S D2 N-Channel MOSFET P-Channel MOSFET Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 –20 Gate-Source Voltage VGS 20 20 2.5 1.9 2.0 1.5 IDM 20 15 IS 1.25 –1.25 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range ID Unit V A 1.0 PD W 0.64 TJ, Tstg –55 to 150 C Symbol N- or P-Channel Unit RthJA 125 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70171 S-00873—Rev. F, 01-May-00 www.vishay.com FaxBack 408-970-5600 2-1 Si6542DQ Vishay Siliconix Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Z G V l D i Current C Zero Gate Voltage Drain On-State Drain Currenta a D i S O S R i Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 1.0 VDS = VGS, ID = –250 mA P-Ch –1.0 V VDS = 0 V, VGS = "20 V "100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = –20 V, VGS = 0 V P-Ch –1 VDS = 20 V, VGS = 0 V, TJ = 55C N-Ch 25 VDS = –20 V, VGS = 0 V, TJ = 55C P-Ch VDS = 5 V, VGS = 10 V N-Ch 14 VDS = –5 V, VGS = –10 V P-Ch –10 nA A mA –25 A VGS = 10 V, ID = 2.5 A N-Ch 0.065 0.09 VGS = –10 V, ID = 1.9 A P-Ch 0.13 0.17 VGS = 4.5 V, ID = 1.8 A N-Ch 0.100 0.175 VGS = –4.5 V, ID = 1.3 A P-Ch 0.26 0.32 VDS = 15 V, ID = 2.5 A N-Ch 5 VDS = –15 V, ID = – 1.9 A P-Ch 3 IS = 1.25 A, VGS = 0 V N-Ch 0.8 1.2 IS = –1.25 A, VGS = 0 V P-Ch 0.8 –1.2 N-Ch 7 10 10 W S V Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs P-Ch 7 N-Ch 0.9 P-Ch 1.3 N-Ch 2.1 P-Ch 1.7 N-Ch 11 20 P-Ch 9 20 N-Channel N Ch l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W N-Ch 11 20 P-Ch 12 25 P-Channel VDD = –10 10 V V, RL = 10 W ID ^ –1 A, V 1 10 V, RG = 6 W GEN = –10 N-Ch 16 30 P-Ch 17 30 N-Ch 6 15 P-Ch 6 15 IF = 1.25 A, di/dt = 100 A/ms N-Ch 45 70 IF = –1.25 A, di/dt = 100 A/ms P-Ch 35 70 N-Channel N Ch Channel l VDS = 10 V, VGS = 10 V, ID = 2.5 A P-Channel VDS = –10 10 V V, VGS = –10 10 V V, ID = –1.9 19A Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qgd td(on) tr td(off) tf trr C nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70171 S-00873—Rev. F, 01-May-00 Si6542DQ Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 6V 25C 5V 12 TC = –55C 16 VGS = 10, 9 ,8 ,7 V I D – Drain Current (A) I D – Drain Current (A) 16 8 4V 4 125C 12 8 4 3V 0 0 0 1 2 3 4 5 0 2 4 On-Resistance vs. Drain Current 10 Capacitance 1000 0.30 0.25 800 VGS = 4.5 V 0.20 C – Capacitance (pF) r DS(on) – On-Resistance ( Ω ) 8 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) 0.15 0.10 VGS = 10 V 600 Ciss 400 Coss 200 0.05 Crss 0 0 0 2 4 6 8 0 10 4 ID – Drain Current (A) 2.0 VGS = 10 V ID = 2.5 A 6 4 2 0 0 1 2 3 4 5 6 Qg – Total Gate Charge (nC) Document Number: 70171 S-00873—Rev. F, 01-May-00 12 16 20 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A r DS(on) – On-Resistance ( Ω ) (Normalized) 8 8 VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) 6 7 8 1.5 1.0 0.5 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si6542DQ Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 20 0.35 r DS(on) – On-Resistance ( Ω ) TJ = 150C I S – Source Current (A) 10 TJ = 25C 0.30 ID = 2.5 A 0.25 0.20 0.15 0.10 0.05 0.00 1.0 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 VSD – Source-to-Drain Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 1.0 120 100 V GS(th) Variance (V) 0.5 80 Power (W) ID = 250 µA 0.0 60 40 –0.5 20 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.001 0.010 TJ – Temperature (C) 0.100 1.000 10.000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 10–2 4. Surface Mounted 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70171 S-00873—Rev. F, 01-May-00 Si6542DQ Vishay Siliconix Output Characteristics Transfer Characteristics 15 15 VGS = 10, 9 V 12 12 8V I D – Drain Current (A) I D – Drain Current (A) TC = –55C 7V 6V 9 5V 6 4V 3 125C 25C 9 6 3 3V 0 0 0 1 2 3 4 5 0 2 4 8 10 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 0.5 1000 0.4 800 VGS = 4.5 V C – Capacitance (pF) r DS(on) – On-Resistance ( Ω ) 6 0.3 0.2 VGS = 10 V 0.1 Ciss 600 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 4 ID – Drain Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) V GS – Gate-to-Source Voltage (V) 2.0 VGS = 10 V ID = 1.9 A 8 6 4 2 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70171 S-00873—Rev. F, 01-May-00 12 16 20 VDS – Drain-to-Source Voltage (V) Gate Charge 10 8 8 1.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.9 A 1.0 0.5 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-5 Si6542DQ Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 20 0.6 r DS(on) – On-Resistance ( Ω ) I S – Source Current (A) TJ = 150C 10 TJ = 25C 0.5 0.4 ID = 1.9 A 0.3 0.2 0.1 0 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 VSD – Source-to-Drain Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 1.0 120 ID = 250 µA 100 80 Power (W) V GS(th) Variance (V) 0.5 0.0 60 40 –0.5 20 –1.0 –50 –25 0 25 50 75 100 125 0 150 0.001 0.010 TJ – Temperature (C) 0.100 1.000 10.000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 10–2 4. Surface Mounted 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-6 Document Number: 70171 S-00873—Rev. F, 01-May-00