Si7108DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested RoHS COMPLIANT APPLICATIONS D D D D PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 Synchronous Rectification Point-of-Load Converters Protection Devices Hot Swap D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: Si7108DN-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "16 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS Single Avalanche Current IAS L=0 0.1 1 mH Single Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C 22 14 11.2 Operating Junction and Storage Temperature Range A 60 3.2 1.3 22 EAS PD V 17.6 IDM A 24 mJ 3.8 1.5 2.0 0.8 TJ, Tstg –55 to 150 Soldering Recommendations (Peak Temperature)b, c Unit W _C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 24 33 65 81 1.9 2.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73216 S-51413—Rev. C, 01-Aug-05 www.vishay.com 1 Si7108DN Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min 1 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 mA 2 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "16 V "100 nA IDSS VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V, TJ = 55_C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 40 A VGS = 10 V, ID = 22 A 0.0041 0.0049 VGS = 4.5 V, ID = 19.7 A 0.005 0.0061 gfs VDS = 15 V, ID = 22 A 88 VSD IS = 3.2 A, VGS = 0 V 0.75 1.2 20 30 VDS = 10 V, VGS = 4.5 V, ID = 22 A 6.3 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate-Resistance f = 1 MHz Rg Turn-On Delay Time 0.7 td(on) Rise Time tr Turn-Off Delay Time VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Reverse Recovery Charge Qrr nC 4.9 IF = 3.2 3 2 A, A di/dt = 100 A/ms 1.4 2.1 10 15 10 15 60 130 10 15 30 60 20 36 W ns nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 3V 50 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 thru 4 V 50 40 30 20 10 40 30 TC = 125_C 20 10 25_C –55_C 0 0.0 0.2 0.4 0.6 0.8 1.0 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 1.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) Document Number: 73216 S-51413—Rev. C, 01-Aug-05 Si7108DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3000 0.008 Ciss 2500 0.006 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.007 VGS = 4.5 V 0.005 0.004 VGS = 10 V 0.003 2000 1500 1000 0.002 Coss 500 0.001 Crss 0.000 0 0 10 20 30 40 50 60 0 4 12 16 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 10 V ID = 22 A 8 VGS = 10 V ID = 22 A 1.4 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 8 6 4 2 1.2 1.0 0.8 0 0 10 20 30 40 0.6 –50 50 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.015 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 60 TJ = 150_C 10 TJ = 25_C 1 0.0 0.012 ID = 22 A 0.009 0.006 0.003 0.000 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 73216 S-51413—Rev. C, 01-Aug-05 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7108DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-to-Ambient 0.4 50 ID = 250 mA 40 –0.0 Power (W) V GS(th) Variance (V) 0.2 –0.2 30 20 –0.4 10 –0.6 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 TJ – Temperature (_C) 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited *Limited by rDS(on) P(t) = 0.0001 I D – Drain Current (A) 10 P(t) = 0.001 ID(on) Limited P(t) = 0.01 1 P(t) = 0.1 P(t) = 1 0.1 P(t) = 10 TA = 25_C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73216 S-51413—Rev. C, 01-Aug-05 Si7108DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73216. Document Number: 73216 S-51413—Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1