VISHAY SI7461DP-T1-E3

Si7461DP
Vishay Siliconix
New Product
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)
0.0145 @ VGS = −10 V
−14.4
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
0.019 @ VGS = −4.5 V
−12.6
APPLICATIONS
VDS (V)
−60
D Automotive
− 12-V Boardnet
− High-Side Switches
− Motor Drives
PowerPAK SO-8
S
S
6.15 mm
1
2
5.15 mm
S
3
S
4
G
G
D
8
7
D
6
D
5
D
D
Bottom View
P-Channel MOSFET
Ordering Information: Si7461DP-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
−60
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
Avalanche Current
IS
L= 0.1
0 1 mH
Single Pulse Avalanche Energy
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
−8.6
−11.5
−6.9
Operating Junction and Storage Temperature Range
A
−60
−4.5
−1.6
IAS
50
EAS
125
PD
V
−14.4
IDM
mJ
5.4
1.9
3.4
1.2
TJ, Tstg
Unit
−55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Case (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
18
23
52
65
1.0
1.3
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72567
S-40411—Rev. C, 15-Mar-04
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Si7461DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = −250 mA
−1
Typ
Max
Unit
−3
V
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain Source On-State
Drain-Source
On State Resistancea
VDS = 0 V, VGS = "20 V
Diode Forward Voltagea
−1
VDS = −60 V, VGS = 0 V, TJ = 70_C
−10
VDS v −5 V, VGS = −10 V
rDS(on)
DS( )
Forward Transconductancea
VDS = −60 V, VGS = 0 V
mA
−40
A
VGS = −10 V, ID = −14.4 A
0.0115
0.0145
VGS = −4.5 V, ID = −12.6 A
0.015
0.019
gfs
VDS = −15 V, ID = −14.4 A
31
VSD
IS = −4.5 A, VGS = 0 V
−0.8
−1.2
121
190
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
32
Gate-Resistance
Rg
3
td(on)
20
tr
20
30
205
310
90
135
45
70
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS = −30 V, VGS = −10 V, ID = −14.4 A
VDD = −30 V, RL = 30 W
ID ^ −1 A, VGEN = −10 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
20
IF = −4.5 A, di/dt = 100 A/ms
nC
W
30
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
50
VGS = 10 thru 4 V
40
I D − Drain Current (A)
I D − Drain Current (A)
50
30
20
3V
10
40
30
20
TC = 125_C
10
0
0
1
2
3
4
VDS − Drain-to-Source Voltage (V)
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Transfer Characteristics
60
5
0
0.0
25_C
−55_C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS − Gate-to-Source Voltage (V)
Document Number: 72567
S-40411—Rev. C, 15-Mar-04
Si7461DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020
Capacitance
8000
VGS = 4.5 V
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
7000
0.016
VGS = 10 V
0.012
0.008
Ciss
6000
5000
4000
3000
2000
0.004
Coss
1000
0.000
Crss
0
0
10
20
30
40
50
0
60
10
Gate Charge
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
50
60
VGS = 10 V
ID = 14.4 A
1.6
6
4
2
1.4
1.2
1.0
0.8
0
0
25
50
75
100
0.6
−50
125
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.04
r DS(on) − On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ − Junction Temperature (_C)
70
I S − Source Current (A)
40
On-Resistance vs. Junction Temperature
1.8
VDS = 30 V
ID = 17 A
8
30
VDS − Drain-to-Source Voltage (V)
ID − Drain Current (A)
10
20
0.03
ID = 14.4 A
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 72567
S-40411—Rev. C, 15-Mar-04
1.2
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si7461DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.8
100
ID = 250 mA
80
0.4
Power (W)
V GS(th) Variance (V)
0.6
0.2
60
40
0.0
20
−0.2
−0.4
−50
−25
0
25
50
75
100
125
0
150
0.01
0.1
TJ − Temperature (_C)
1
10
100
Time (sec)
Safe Operating Area
100
IDM Limited
rDS(on) Limited
I D − Drain Current (A)
10
1
P(t) = 0.001
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
P(t) = 1
0.1
TA = 25_C
Single Pulse
P(t) = 10
BVDSS Limited
dc
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 52_C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72567
S-40411—Rev. C, 15-Mar-04
Si7461DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Document Number: 72567
S-40411—Rev. C, 15-Mar-04
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
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