SKM 400GB066D Absolute Maximum Ratings Symbol Conditions IGBT ) 3 +, - $ 3 *>, - +,-! & "00 ,00 % ?0 - 9?0 % ?00 % A +0 3 *,0 - " 6 +, - /,0 % ?0 - 9+0 % ?00 % ,00 % 3 . /0 111 2*>, - . /0 111 2*+, - /000 $:@+#$ 8) Trench IGBT Modules 9"0 7 8 4 *, 7 ) B "00 Inverse Diode $C 3 *>, - $C:@ SKM 400GB066D $C:@+#$C Module $:@) Preliminary Data Features ! " # $ Typical Applications % & '() & Remarks & *+,- #! && ./0 111 2*,0- (& & 3 4*,0- ) &5 4 "67 8 4 *,7 3 *,0-7 4 9"0! :8 ; < . & & Units +, - $:@ SEMITRANS® 3 Values %! * 1 Characteristics Symbol Conditions IGBT 8 8 ! $ "!/ % $) 8 0 ! ) 0 8 *, +,-! & min. typ. max. Units , ,!? "!, 3 +, - 0!+, 0!>, % 3 +, - 0!D * 3 *,0 - 0!?, 0!D 3 +,- *!/ +!9 E 3 *,0- +!* 9 E *!/, *!D 3 *,0- 1 *!> +!* * @F +/!> *!,/ C C 0!>9 C 9000 $ /00 %! 8 *, 3 +,- 1 +,! 8 0 G8 8 .?1112*, :8 3 - & & :8 *!, E :8 *!, E : 3. $8K 900 $ /00% 3 *,0 - 8 .?J2*, + H +00 "0 ? ,"0 ,9 I *" I 0!*+ LJM GB 1 05-09-2006 SEN © by SEMIKRON SKM 400GB066D Characteristics Symbol Conditions Inverse Diode C $C /00 %7 8 0 C0 C SEMITRANS® 3 Trench IGBT Modules $::@ G $C /00 % &J& >+,0 %J6 8 .? 7 900 : 3.N && Preliminary Data typ. max. Units 3 +, - 1 *!/ *!" 3 +, - 0!D, * 3 +, - *!* *!, E 3 *,0 - /*0 "+ % 6 */ I 0!+ LJM Module O :P2P SKM 400GB066D min. *, 1! . +0 +, - 0!9, E *+, - 0!, E : . & 0!09? LJM @ < @" 9 , Q @ @" +!, , Q 9+, Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. ! " # $ Typical Applications % & '() & Remarks & This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. *+,- #! && ./0 111 2*,0- (& & 3 4*,0- ) &5 4 "67 8 4 *,7 3 *,0-7 4 9"0! :8 ; < . & & GB 2 05-09-2006 SEN © by SEMIKRON SKM 400GB066D SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units : : : : * + 9 / * + 9 ?0 ++!, "!/ *!* 0!0//> 0!0++9 0!00*, <JM <JM <JM <JM / 0!000+ : : : : * + 9 / * + 9 *90 ,, *+!, +!, 0!0,/ 0!0* 0!00*, <JM <JM <JM <JM / 0!* Zth(j-c)D Trench IGBT Modules SKM 400GB066D Preliminary Data Features ! " # $ Typical Applications % & '() & Remarks & *+,- #! && ./0 111 2*,0- (& & 3 4*,0- ) &5 4 "67 8 4 *,7 3 *,0-7 4 9"0! :8 ; < . & & GB 3 05-09-2006 SEN © by SEMIKRON SKM 400GB066D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 05-09-2006 SEN © by SEMIKRON SKM 400GB066D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 05-09-2006 SEN © by SEMIKRON SKM 400GB066D N ," 8K 6 N," 05-09-2006 SEN © by SEMIKRON