SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). Rugged and reliable. Surface Mount Package. SOP-8 B PRODUCT SUMMARY VDSS(V) d 40 PRODUCT SUMMARY RDS(on) m(Max 10@VGS= 10V 13@VGS= 4.5V ID(A) L D M 10 A C N J MARKING H REF. D D D D 8 7 6 5 STM4470 A B C D E F G = Date Code G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. 1 2 3 4 S S S G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL d RATINGS UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current @TJ= 25°C ID 10 A Pulsed Drain Current b IDM 39 A a Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction & Storage Temperature Range IS 1.7 A PD 2.5 W TJ, TSTG -55 ~ 150 °C 50 °C / W THERMAL RESISTANCE RATINGS Thermal Resistance Junction-ambient a http://www.SeCoSGmbH.com/ 29-Apr-2010 Rev. A RθJA Any changes of specification will not be informed individually. Page 1 of 5 SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. Drain-Source Breakdown Voltage d BVDSS 40 - Zero Gate Voltage Drain Current IDSS - Gate-Body Leakage Current IGSS - MAX. UNIT TEST CONDITIONS OFF CHARACTERISTICS - V VGS= 0V, ID= 250μA - 1 μA VDS= 32V, VGS= 0V - ±100 nA VGS= ±20V, VDS= 0V V VDS= VGS, ID= 250μA ON CHARACTERISTICS b Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) On-State Drain Current Forward Transconductance 1 1.7 3 - 8 10 - 11 13 mΩ VGS= 10V, ID= 10A VGS= 4.5V, ID= 6A ID(ON) 20 - - A VDS= 10V, VGS= 10A gfs - 20 - S VDS= 10V, ID= 10A pF VDS= 20V, VGS= 0V, f= 1.0MHz nS VDD= 20V ID= 1A VGS= 10V RGEN= 3.3Ω DYNAMIC CHARACTERISTICS C Input Capacitance CISS - 1020 - Output Capacitance COSS - 240 - Reverse Transfer Capacitance CRSS - 135 - SWITCHING CHARACTERISTICS C Turn-On Delay Time Td(on) - 15 - Tr - 22 - Td(off) - 48 - Fall Time Tf - 12 - Total Gate Charge Qg - 19.5 - - 9.8 - Rise Time Turn-Off Delay Time Gate-Source Charge Qgs - 2 - Gate-Drain Charge Qgd - 5.5 - VDS= 20V, ID= 10A, VGS= 10V nC VDS= 20V, ID= 10A, VGS= 4.5V VDS= 20V, ID= 10A, VGS= 10V DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VSD - 0.73 1.2 V VGS= 0V, IS= 1.7A Notes a. Surface Mounted on FR4 Board, t ≦ 10 sec. b. Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2％. c. Guaranteed by design, not subject to production testing. d. Guaranteed when external Rg= 3.3Ω and tf ＜ tf max. http://www.SeCoSGmbH.com/ 29-Apr-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 5 SSG4470STM Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 29-Apr-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 5 SSG4470STM Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 29-Apr-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 5 SSG4470STM Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 29-Apr-2010 Rev. A Any changes of specification will not be informed individually. Page 5 of 5