Bulletin I25159 rev. C 02/00 ST280C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 500A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK) Typical Applications DC motor controls Controlled DC power supplies AC controllers case style TO-200AB (A-PUK) Major Ratings and Characteristics Parameters ST280C..C Units 500 A 55 °C 960 A 25 °C @ 50Hz 7850 A @ 60Hz 8220 A @ 50Hz 308 KA2s @ 60Hz 281 KA2s 400 to 600 V 100 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM/V RRM tq typical TJ www.irf.com 1 ST280C..C Series Bulletin I25159 rev. C 02/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 04 400 500 06 600 700 Type number ST280C..C 30 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM ST280C..C Units Conditions 500 (185) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled 960 Max. peak, one-cycle 7850 non-repetitive surge current 8220 DC @ 25°C heatsink temperature double side cooled t = 10ms A 6600 I 2t Maximum I2t for fusing V T(TO) 1 Low level value of threshold t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 281 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 3080 KA2s voltage r t1 Low level value of on-state High level value of on-state t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V (I > π x IT(AV)),TJ = TJ max. 0.88 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.50 slope resistance r t2 KA2√s 0.84 voltage V T(TO) 2 High level value of threshold 100% VRRM 308 200 Maximum I2√t for fusing reapplied t = 10ms 6900 218 I 2√ t No voltage t = 8.3ms mΩ (I > π x IT(AV)),TJ = TJ max. 0.47 slope resistance V TM Max. on-state voltage 1.36 IH Maximum holding current 600 IL Max. (typical) latching current V I = 1050A, TJ = 125°C, t = 10ms sine pulse mA T J = 25° C, anode supply 12V resistive load 1000 (300) pk p Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d Typical delay time ST280C..C 1000 Units Conditions A/µs 2 Typical turn-off time 100 r TJ = T J max, anode voltage ≤ 80% VDRM Gate current 1A, di /dt = 1A/µs g 1.0 µs tq Gate drive 20V, 20Ω, t ≤ 1µs V = 0.67% VDRM, TJ = 25°C d ITM = 300A, TJ = T J max, di/dt = 20A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs p www.irf.com ST280C..C Series Bulletin I25159 rev. C 02 Blocking Parameter ST280C..C Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs T J = TJ max. linear to 80% rated V DRM IDRM IRRM Max. peak reverse and off-state leakage current 30 mA TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM ST280C..C Maximum peak gate power 10.0 PG(AV) Maximum average gate power 2.0 IGM 3.0 Max. peak positive gate current +VGM Maximum peak positive Maximum peak negative TYP. DC gate current required to trigger VGT DC gate voltage required to trigger IGD VGD A TJ = TJ max, tp ≤ 5ms V T J = TJ max, t ≤ 5ms p MAX. 180 - 90 150 40 - TJ = 125°C 2.9 - TJ = - 40°C 1.8 3.0 1.2 - DC gate current not to trigger DC gate voltage not to trigger TJ = TJ max, tp ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 5.0 gate voltage IGT W 20 gate voltage -VGM Units Conditions 10 0.30 TJ = - 40°C mA V TJ = 25°C Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST280C..C TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F wt Mounting force, ± 10% Approximate weight Case style www.irf.com Units °C 0.17 0.08 0.033 0.017 Conditions DC operation single side cooled K/W K/W 4900 N (500) (Kg) 50 g TO - 200AB (A-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table 3 ST280C..C Series Bulletin I25159 rev. C 02/00 ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 180° 0.016 0.016 0.011 0.011 120° 0.019 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TJ = TJ max. K/W Ordering Information Table Device Code ST 28 0 C 06 C 1 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST280C..C Series Bulletin I25159 rev. C 02 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) 38 (1.50) DIA MAX. Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° 42 (1.65) MAX. 130 ST280C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 Conduction Angle 80 30° 70 90° 60 120° 180° 50 40 60° 0 50 100 150 200 250 300 350 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 28 (1.10) 130 120 110 100 90 80 70 60 50 40 30 20 ST280C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W Conduction Period 30° 60° 90° 120° 180° 0 100 200 300 400 DC 500 600 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST280C..C Series Conduction Angle 30° 60° 90° 120° 180° 0 1000 100 200 300 400 500 600 700 800 700 RMS Limit Conduction Angle 300 ST280C..C Series T J = 125°C 100 0 0 100 200 300 400 500 600 700 60° 90° 120° 180° DC 0 200 400 600 800 1000 1300 DC 1200 180° 1100 120° 1000 90° 900 60° 800 30° 700 6 0 0 RMS Limit 500 Conduction Period 400 300 ST280C..C Series 200 T J = 125°C 100 0 0 200 400 600 800 1000 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 7000 At Any Rated Load Condition And With Rated V R R M Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 3500 ST280C..C Series 3000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 30° Fig. 4 - Current Ratings Characteristics 500 200 Conduction Period Fig. 3 - Current Ratings Characteristics 600 400 ST280C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W Average On-state Current (A) 180° 120° 90° 60° 30° 900 130 120 110 100 90 80 70 60 50 40 30 20 Average On-state Current (A) Maximum Allowable Heatsink Temperature (°C) 80 70 60 50 40 30 20 ST280C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W Maximum Allowable Heatsink Temperature (°C) 130 120 110 100 90 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25159 rev. C 02/00 8000 7500 7000 6500 6000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated V R R M Reapplied 5500 5000 4500 4000 3500 3000 0.01 ST280C..C Series 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST280C..C Series Bulletin I25159 rev. C 02/00 Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST280C..C Series 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs(K/W) Fig. 9 - On-state Voltage Drop Characteristics 1 0.1 Steady State Value R thJ-hs = 0.17 K/W (Single Side Cooled) R thJ-hs = 0.08 K/W (Double Side Cooled) (DC Operation) 0.01 ST280C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 (1) (2) (3) (4) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs PGM PGM PGM PGM = = = = 10W, 20W, 40W, 60W, tp tp tp tp = = = = 4ms 2ms 1ms 0.66ms ( a) (b ) VGD IG D 0.1 0.001 0.01 T j= -40 °C 1 Tj=25 °C T j=125 °C Instantaneous Gate Voltage (V) 100 ( 1 ) (2) (3) (4) Device: ST280C..C Series Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7