ST300SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 300 A FEATURES • Center amplifying gate • International standard case TO-209AE (TO-118) RoHS • Hermetic metal case with ceramic insulator COMPLIANT • Threaded studs UNF 3/4"-16UNF-2A or ISO M24 x 1.5 • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Lead (Pb)-free • Designed and qualified for industrial level TO-209AE (TO-118) TYPICAL APPLICATIONS • DC motor controls PRODUCT SUMMARY IT(AV) • Controlled DC power supplies 300 A • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 300 A 75 °C 470 ITSM I2 t 50 Hz 8000 60 Hz 8380 50 Hz 320 60 Hz 292 VDRM/VRRM 400 to 2000 tq Typical TJ A kA2s V 100 µs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST300S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM AND OFF-STATE VOLTAGE V mA V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 Document Number: 94406 Revision: 11-Aug-08 For technical questions, contact: [email protected] 50 www.vishay.com 1 ST300SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 300 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM VALUES UNITS 180° conduction, half sine wave TEST CONDITIONS 300 A 75 °C DC at 64 °C case temperature 470 t = 10 ms 8000 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied 100 % VRRM reapplied No voltage reapplied 8380 Sinusoidal half wave, initial TJ = TJ maximum 7040 320 292 226 100 % VRRM reapplied 3200 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.97 VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.74 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.73 Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.66 VTM Maximum holding current IH Typical latching current IL kA2s 207 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 6730 600 TJ = 25 °C, anode supply 12 V resistive load 1000 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dIdt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94406 Revision: 11-Aug-08 ST300SPbF Series Phase Control Thyristors (Stud Version), 300 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp ≤ 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp ≤ 5 ms 3.0 IGT TJ = 25 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C DC gate current required to trigger MAX. 200 - 100 200 50 - 2.5 - 1.8 3 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.10 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.03 Non-lubricated threads 48.5 (425) N·m (lbf · in) 535 g Mounting torque, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W TO-209AE (TO-118) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94406 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 ST300SPbF Series Vishay High Power Products Phase Control Thyristors ST300S Series R thJC (DC) = 0.10 K/ W 120 110 Conduction Angle 100 30° 90 60° 90° 120° 180° 80 70 0 50 100 150 200 250 300 130 Maximum Allowable Case Temperature (°C) 130 350 ST300SSeries RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Period 100 90 80 30° 60° 90° 120° 70 180° 60 0 100 200 300 DC 400 500 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 480 el -D 0.2 K/ W ta RMSLimit 280 K/ W W K/ 320 K/ W 03 0. 360 0. 08 0. 12 = 400 A 180° 120° 90° 60° 30° 440 hS R t R Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) (Stud Version), 300 A 240 200 160 Conduc tion Angle 120 80 0.6 K / W 1.2 K/ W ST300SSeries TJ = 125°C 40 0.3 K/ W 0.4 K/ W 0 0 40 25 80 120 160 200 240 280 320 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Average On-state Current (A) 650 DC 180° 550 120° 500 90° 450 60° 30° 400 350 300 RMSLimit 250 200 150 100 50 0 0 100 600 R th SA = K/ W el -D K/ W ta 0.1 2 W K/ 0. 08 03 0. R Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0.2 Conduc tion Period ST300SSeries TJ = 125°C 200 300 400 Average On-state Current (A) K/ W 0.3 K/ W 0.6 K / W 1.2 K/ W 500 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94406 Revision: 11-Aug-08 ST300SPbF Series 7500 Peak Half Sine Wave On-state Current (A) Pea k Half Sine Wave On-state Current (A) Phase Control Thyristors (Stud Version), 300 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 7000 6500 6000 5500 5000 4500 4000 ST300S Series 3500 3000 1 10 100 Vishay High Power Products 8500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 7500 Of Conduction May Not Be Maintained. Initial TJ = 125°C 7000 No Voltage Reapplied Rated VRRM Reapplied 6500 8000 6000 5500 5000 4500 4000 ST300S Series 3500 3000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST300S Series 100 0 1 2 3 4 5 6 7 8 9 Instantaneous On-state Voltage (V) Transient Therma l Impedanc e Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value R thJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST300S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94406 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 ST300SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 300 A 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) Tj=-40 °C Tj=25 °C Tj=125 °C 1 (1) (2) (3) (4) VGD IGD 0.1 0.001 Frequency Limited by PG(AV) Device: ST300SSeries 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 30 0 S 20 P 0 - PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A threads M = Stud base metric threads (M24 x 1.5) 7 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 3 = Threaded top terminal 3/8" 24UNF-2A 8 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) 9 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95084 For technical questions, contact: [email protected] Document Number: 94406 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-209AE (TO-118) DIMENSIONS - TO-209AE (TO-118) in millimeters (inches) )M IN 4.5 (0.18) MAX. 4.3 (0.17) DIA. )M IN 9.5 (0. 38 (1.50) MAX. DIA. White shrink SW 45 Flexible leads C.S. 50 mm2 (0.078 s.i.) Fast-on terminals AMP. 280000-1 REF-250 47 (1.85) MAX. Red shrink 21 (0.82) MAX. 245 (9.65) 255 (10.04) Red cathode 22 245 (9.65) ± 10 (0.39) Red silicon rubber 27.5 (1.08) MAX. 86 White gate 10.5 (0.41) NOM. . (0. 37 22 (0.87) MAX. . Ceramic housing 3/4"16 UNF-2A (1) 49 (1.92) MAX. Note (1) For metric device: M24 x 1.5 - length screw 21 (0.83) maximum DIMENSIONS - TO-209AE (TO-118) WITH TOP THREAD TERMINAL 3/8" in millimeters (inches) Ceramic housing 17 (0.67) DIA. 25 (0.98) 3/8"-24UNF-2A 27.5 (1.08) MAX. 47 (1.85) MAX. 21 (0.83) MAX. 77.5 (3.05) 80.5 (3.17) 38 (1.5) DIA. MAX. SW 45 3/4"-16UNF-2A (1) Note (1) For metric device: M24 x 1.5 - length screw 21 (0.83) maximum Document Number: 95084 Revision: 02-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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