STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION SOP-8 Top View 8 D1 7 D1 6 D2 5 D2 FEATURE P Channel z -30V/-7.2A, RDS(ON) = 22m-ohm (Typ.) @VGS =-10V z -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel z 30V/8.5A, RDS(ON) = 10m-ohm @VGS =10V z 30V/7.8A, RDS(ON) = 16m-ohm @VGS =4.5V z Super high density cell design for extremely low RDS(ON) z SOP-8 package design STC5416 YA 1 S1 2 G1 Y: Year Code 3 S2 4 G2 A: Process Code N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Part Number Package Part Marking STC4516S8RG SOP-8 STC4516 STC4516S8TG SOP-8 STC4516 ※ Process Code : A ~ Z ; a ~ z ※ STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) P-Channel Parameter Drain-Source Voltage Symbol VDSS Typical -30 Unit V VGSS +/-20 V ID A IDM -7.2 -5.6 -20 Continuous Source Current (Diode Conduction) IS -2.3 A Power Dissipation PD W TJ 2.8 1.8 -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 Symbol VDSS Typical 30 Unit V VGSS +/-20 V ID A IDM 8.5 7.5 20 Continuous Source Current (Diode Conduction) IS 2.3 A Power Dissipation PD W TJ 2.5 1.6 -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current TA=25℃ TA=70℃ Operation Junction Temperature A ℃/W N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current TA=25℃ TA=100℃ Operation Junction Temperature A ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) P-Channel Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -30 VGS(th) VDS=VGS,ID=-250uA -1.0 Gate Leakage Current IGSS Zero Gate Voltage Drain Current On-State Drain Current Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage -3.0 V VDS=0V,VGS=+20V +100 nA IDSS VDS=-30V,VGS=0V -1 -5 ID(on) VDS=-30V,VGS=0V TJ=55℃ VDS≥-5V,VGS=-10V Drain-source On-Resistance RDS(on) Forward Transconductance gfs Diode Forward Voltage V VSD uA -40 A VGS=-10V,ID=-7.2A VGS=-4.5V,ID=-5.6A VDS=-10V,ID=-7.2A 0.022 0.030 24 IS=-2.3A,VGS=0V -0.8 Ω S -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Turn-On Time Turn-Off Time Td(on) tr Td(off) tf VDS=-15V,VGS=-10V ID=-7.2A VDS=-15V,VGS=0V f=1MHz VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 16 nC 23 4.5 1650 350 235 pF 16 30 17 30 65 110 35 80 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) -N-Channel Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V 3.0 V VDS=0V,VGS=+20V +100 nA VDS=24V,VGS=0V 1 VDS=24V,VGS=0V TJ=55℃ 5 Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≧5V,VGS=10V Drain-source On-Resistance RDS(on) Forward Transconductance gfs VGS=10V,ID=8.5A VGS=4.5V,ID=7.8A VDS=15V,ID=6.2A 0.010 0.013 13 IS=-2.3A,VGS=0V 0.8 1.2 16 24 Diode Forward Voltage VSD uA 25 A Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Turn-On Time Td(on) tr Turn-Off Time Td(off) tf VDS=15V,VGS=10V ID=2A VDS=15V,VGS=0V f=1MHz VDD=15V,RL=15Ω ID=5.0A,VGEN=10V RG=1Ω 4.2 nC 2.5 1350 258 150 pF 15 6 20 16 20 40 12 20 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl TYPICAL CHARACHTERISTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl TYPICAL CHARACHTERISTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl TYPICAL CHARACHTERISTICS (P MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl TYPICAL CHARACHTERISTICS (P MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1