STMICROELECTRONICS STD5NE10

STD5NE10

N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252
STripFET POWER MOSFET
TYPE
STD5NE10
■
■
■
■
■
■
V DSS
R DS(o n)
ID
100 V
< 0.4 Ω
5 A
TYPICAL RDS(on) = 0.32 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE TESTED
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
3
3
2
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
IPAK
TO-251
(Suffix ”-1”)
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOTOR CONTROL (DISK DRIVES, etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
VGS
Parameter
Value
Drain-source Voltage (VGS = 0)
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
± 20
V
5
A
Gate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
ID
o
I DM (•)
P tot
Drain Current (continuous) at Tc = 100 C
3.5
A
Drain Current (pulsed)
20
A
Total Dissipation at T c = 25 oC
25
W
0.17
W /o C
0.6
V/ns
Derating F actor
dv/dt( 1 )
T st g
Tj
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 1999
Unit
-65 to 175
o
C
175
o
C
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
STD5NE10
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering Purpose
Max
Max
T yp
o
6
100
1.5
275
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
5
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 30V)
25
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
100
Unit
V
T c = 125 oC
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID = 2.5 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
2
Typ.
3
4
V
0.32
0.4
Ω
5
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/9
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
ID = 2.5 A
2.5
S
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
V GS = 0
305
45
21
pF
pF
pF
f = 1 MHz
STD5NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay T ime
Rise Time
V DD = 50 V
I D = 3.5 A
R G = 4.7 Ω
V GS = 10 V
(Resistive Load, see fig. 3)
6.5
15
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 80 V ID = 5 A V GS = 10 V
14
6
4
18
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
t d(of f)
tf
Turn-off Delay T ime
Fall T ime
V DD = 50 V
I D = 3.5 A
V GS = 10 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
25
7
ns
ns
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall T ime
Cross-over Time
V DD = 80 V
ID = 7 A
V GS = 10 V
R G = 4.7 Ω
(Induct ive Load, see fig. 5)
7
8
16
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 8 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 5 A
di/dt = 100 A/µs
T j = 150 o C
V DD = 50 V
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
5
20
A
A
1.5
V
75
ns
210
nC
5.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for
Thermal Impedance
3/9