STB60NF06L STP60NF06L STP60NF06LFP N-CHANNEL 60V - 0.012 Ω - 60A TO-220/TO-220FP/D2PAK STripFET™ II POWER MOSFET TYPE STB60NF06L STP60NF06L STP60NF06LFP ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 60 V 60 V 60 V <0.014 Ω <0.014 Ω <0.014 Ω 60 A 60 A 60 A(*) TYPICAL RDS(on) = 0.012Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 175 oC OPERATING RANGE LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 3 1 1 2 D2PAK TO-263 (Suffix “T4”) TO-220FP 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STB60NF06L STP60NF06L VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. (*) Refer to SOA for the max allowable current values on FP-type due to Rth value July 2003 . Unit STP60NF06LFP 60 60 ± 15 60 42 240 110 0.73 60(*) 42(*) 240(*) 30 0.2 20 320 ------ 2000 -55 to 175 V V V A A A W W/°C V/ns mJ V °C (1) ISD ≤ 60A, di/dt ≤ 600A/µs, VDD ≤ 48V, T j ≤ TJMAX. (2) Starting T j = 25 oC, ID = 30A, VDD = 30V 1/11 STB60NF06L STP60NF06L/FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb(#) Maximum Lead Temperature For Soldering Purpose Max Max D2PAK TO-220 TO-220FP 1.36 5.0 62.5 35 300 °C/W °C/W °C/W °C (#)Only for SMD, When Mounted on 1 inch2 FR-4 board, 2 oz of Cu. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 15V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 5 V VGS = 10 V ID = 30 A ID = 30 A Min. Typ. 1 V 0.014 0.012 0.016 0.014 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/11 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 30 A Min. 20 S 2000 360 125 pF pF pF STB60NF06L STP60NF06L/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 30 A VDD = 30 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) 35 220 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 60 A VGS= 4.5V 35 10 20 nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 30 A VDD = 30V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) Typ. Max. 55 30 Unit ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 60A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 60 A VDD = 30 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 110 250 4.5 Max. Unit 60 240 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Safe Operating Area for TO-220FP 3/11 STB60NF06L STP60NF06L/FP Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/11 STB60NF06L STP60NF06L/FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature 5/11 STB60NF06L STP60NF06L/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STB60NF06L STP60NF06L/FP D2PAK MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 E 8 10 E1 G 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 0.4 0° 0.015 8° 7/11 STB60NF06L STP60NF06L/FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/11 L4 STB60NF06L STP60NF06L/FP TO-220 MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 9/11 STB60NF06L STP60NF06L/FP D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 10/11 1.574 MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB60NF06L STP60NF06L/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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