STMICROELECTRONICS STP85NF3LL

STP85NF3LL
STB85NF3LL-1
N-CHANNEL 30V - 0.006Ω - 85A TO-220/I2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
STP85NF3LL
STB85NF3LL-1
■
■
■
■
VDSS
RDS(on)
ID
30 V
30 V
< 0.008 Ω
< 0.008 Ω
85 A
85 A
TYPICAL RDS(on) = 0.0075 Ω (@4.5V)
OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
1
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique “
Single Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high efficiency are of paramount importance.
3
12
3
2
TO-220
I2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
30
V
Drain-gate Voltage (RGS = 20 kΩ)
30
V
± 15
V
85
A
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
60
A
Drain Current (pulsed)
340
A
Total Dissipation at TC = 25°C
110
W
Derating Factor
0.73
W/°C
IDM (●)
PTOT
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
–65 to 175
°C
175
°C
(●) Pulse width limited by safe operating area
March 2001
1/9
STP85NF3LL/STB85NF3LL-1
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
1.36
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
30
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
V
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15V
±100
nA
Max.
Unit
ON (1)
Symbol
Parameter
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
Min.
Typ.
1
V
VGS = 10V, ID = 40 A
0.006
0.008
Ω
VGS = 4.5V, ID = 40 A
0.0075
0.0095
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
2/9
Parameter
Forward Transconductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 40 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
30
S
2210
pF
Ciss
Input Capacitance
Coss
Output Capacitance
635
pF
Crss
Reverse Transfer
Capacitance
138
pF
STP85NF3LL/STB85NF3LL-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min.
VDD = 15V, ID = 30A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
VDD = 24V, ID = 60A,
VGS = 4.5V
Typ.
Max.
Unit
22
ns
130
ns
30
9
12.5
40
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
td(off)
tf
td(off)
tf
tc
Parameter
Test Conditions
Min.
Turn-off-Delay Time
Fall Time
VDD = 15V, ID = 30A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
36.5
36.5
ns
ns
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24V, ID =30A
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 5)
32
23
40
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Max.
Unit
Source-drain Current
85
A
ISDM (1)
Source-drain Current (pulsed)
340
A
VSD (2)
Forward On Voltage
ISD = 85A, VGS = 0
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 85A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
ISD
trr
Qrr
IRRM
Parameter
Test Conditions
Min.
Typ.
65
105
3.4
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/9
STP85NF3LL/STB85NF3LL-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STP85NF3LL/STB85NF3LL-1
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP85NF3LL/STB85NF3LL-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP85NF3LL/STB85NF3LL-1
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP85NF3LL/STB85NF3LL-1
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
8/9
STP85NF3LL/STB85NF3LL-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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