STPS1L20MF Low drop power Schottky rectifier in flat package Main product characteristics A IF(AV) 1A VRRM 20 V Tj (max) 150° C VF (max) 0.37 V K STmite flat (DO222-AA) Features and benefits ■ Very low profile package: 0.85 mm ■ Backward compatible with standard STmite footprint ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop for higher efficiency and extended battery life ■ Low thermal resistance ■ Avalanche capability specified Description Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite flat, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the very small size of the package this device fits battery powered equipment (cellular, notebook, PDA’s, printers) as well as chargers and PCMCIA cards. Order Code Part number Marking STPS1L20MF F1L2 Table 1. Absolute ratings (limiting values) Symbol Value Unit VRRM Repetitive peak reverse voltage 20 V IF(RMS) RMS forward voltage 2 A IF(AV) Average forward current Tc = 140° C δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25° C 1400 W -65 to + 150 °C 150 °C 10000 V/µs Tstg dV/dt dPtot --------------dTj Storage temperature range Maximum operating junction temperature(1) Tj 1. Parameter Critical rate of rise of reverse voltage (rated VR, Tj = 25° C) 1 - condition to avoid thermal runaway for a diode on its own heatsink < ------------------------Rth ( j – a ) August 2006 Rev 1 1/7 www.st.com Characteristics 1 STPS1L20MF Characteristics Table 2. Thermal resistance Symbol Rth(j-c) Rth(j-a) (1) Parameter Value Unit Junction to case 20 °C/W Junction to ambient 250 °C/W 1. Mounted with minimum recommended pad size, PC board FR4 Table 3. Symbol Static electrical characteristics Parameter Tests conditions Tj = 25° C Tj = 85° C IR (1) Reverse leakage current Tj = 25° C Tj = 85° C Tj = 25° C Tj = 85° C Tj = 25° C Tj = 85° C Tj = 25° C VF (1) Forward voltage drop Tj = 85° C Tj = 25° C Tj = 85° C Tj = 25° C Tj = 85° C VR = VRRM VR = 10 V VR = 5 V IF = 1 A IF = 2 A Min. Typ Max. 0.015 0.075 0.90 4.50 0.005 0.035 0.45 2.50 0.003 0.025 0.30 1.60 0.38 0.43 0.32 0.37 0.42 0.47 0.37 0.42 0.46 0.53 0.42 0.49 0.50 0.60 0.46 0.56 Unit mA V IF = 3 A IF = 4 A 1. Pulse test: = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.32 x IF(AV) + 0.05 IF2(RMS) 2/7 STPS1L20MF Figure 1. Characteristics Conduction losses versus average Figure 2. current PF(AV)(W) Average forward current versus ambient temperature (δ = 0.5) IF(AV)(A) 0.50 δ = 0.1 0.45 δ = 0.2 1.1 δ = 0.5 Rth(j-a)=Rth(j-c) 1.0 δ = 0.05 0.40 0.9 δ=1 0.35 0.8 0.7 0.30 0.6 Rth(j-a)=270°C/W 0.25 0.5 0.20 0.4 0.15 0.3 T 0.10 0.2 0.05 IF(AV)(A) 0.0 0.1 0.2 Figure 3. 0.3 0.4 0.5 0.6 0.1 δ=tp/T 0.00 0.7 0.8 0.9 1.0 Tamb(°C) tp 0.0 1.1 0 1.2 Normalized avalanche power derating versus pulse duration 25 Figure 4. PARM(tp) PARM(1µs) 50 75 100 125 150 Normalized avalanche power derating versus junction temperature PARM(tp) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 Figure 5. 0 10 1 100 25 1000 Reverse leakage current versus junction temperature (typical values) Figure 6. IM(A) 50 75 100 125 150 Reverse leakage current versus reverse voltage applied (typical values) Zth(j-c)/Rth(j-c) 25 1.0 0.9 20 0.8 0.7 0.6 15 TC=25°C δ = 0.5 0.5 TC=75°C 10 0.4 0.3 5 TC=125°C IM t 0 1.E-03 0.1 t(s) δ=0.5 0.2 δ = 0.2 T δ = 0.1 Single pulse tp(s) δ=tp/T 0.0 1.E-02 1.E-01 1.E+00 1.E-04 1.E-03 1.E-02 tp 1.E-01 3/7 Characteristics Figure 7. STPS1L20MF Reverse leakage currrent versus reverse voltage applied (typical values) Figure 8. IR(mA) Reverse leakage currrent versus junction temperature (typical values) IR(mA) 1.E+02 1.E+02 Tj=150°C VR=20V Tj=125°C 1.E+01 1.E+01 Tj=100°C 1.E+00 1.E+00 Tj=75°C 1.E-01 1.E-01 Tj=50°C 1.E-02 1.E-02 Tj=25°C VR(V) Tj(°C) 1.E-03 1.E-03 0 2 Figure 9. 4 6 8 10 12 14 16 18 20 Junction capacitance versus reverse voltage applied (typical values) 0 25 50 75 100 125 150 Figure 10. Forward voltage drop versus forward current IFM(A) C(pF) 2.0 1000 F=1MHz VOSC=30mVRMS Tj=25°C 1.8 Tj=85°C (maximum values) 1.6 1.4 Tj=85°C (typical values) 1.2 100 1.0 0.8 0.6 0.4 0.2 VR(V) 10 0.0 1 10 100 Figure 11. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu=35 µm, typical values) Rth(j-a)(°C/W) 250 200 150 100 50 S(mm²) 0 0 4/7 Tj=25°C (maximum values) VFM(V) 20 40 60 80 100 120 140 160 180 200 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 STPS1L20MF 2 Package information Package information Table 4. STmite flat dimensions Dimensions Ref. L E1 D L1 Inches Min. Typ. Max. Min. Typ. Max. A 0.80 0.85 0.95 0.031 0.033 0.037 b 0.40 0.55 0.65 0.016 0.022 0.026 b2 0.70 0.85 1.00 0.027 0.033 0.039 L2 b b2 L3 E Millimeters c A c 0.10 0.15 0.25 0.004 0.006 0.009 D 1.75 1.90 2.05 0.069 0.075 0.081 E 3.60 3.80 3.90 0.142 0.150 0.154 E1 2.80 2.95 3.10 0.110 0.116 0.122 L 0.50 0.55 0.80 0.020 0.022 0.031 L1 2.10 2.40 2.60 0.083 0.094 0.102 L2 0.45 0.60 0.75 0.018 0.024 0.030 L3 0.20 0.35 0.50 0.008 0.014 0.020 Figure 12. STmite flat recommended footprint (all dimensions in mm) 0.85 0.63 2.00 0.65 0.65 0.95 1.95 4.13 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 4 6/7 STPS1L20MF Ordering information Part number Marking Package Weight Base qty Delivery mode STPS1L20MF F1L2 STmite flat 16 mg 12000 Tape and reel Revision history Date Revision 21-Aug-2006 1 Changes First issue. STPS1L20MF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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