1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. July 2011 Table 1. Device summary Symbol Value Unit IF(AV) 1 A VRRM 40 V Tj 150 °C VF (max) 0.45 V Doc ID 6262 Rev 5 1/7 www.st.com 7 Characteristics 1 1N5817, 1N5818, 1N5819 Characteristics Table 2. Absolute ratings (limiting values) Value Symbol VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Unit 1N5817 1N5818 1N5819 20 30 40 10 A Average forward current TL = 125 °C, δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 25 A PARM Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C Tj dV/dt 1200 Storage temperature range 1200 900 W -65 to + 150 °C 150 °C 10000 V/µs Maximum operating junction temperature(1) Critical rate of rise of reverse voltage 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink. Rth(j-a) dTj Table 3. Thermal resistances Symbol Parameter Value Unit Rth (j-a) Junction to ambient Lead length = 10 mm 100 °C/W Rth (j-l) Junction to lead Lead length = 10 mm 45 °C/W Table 4. Symbol Static electrical characteristics Parameter IR (1) Reverse leakage current VF (1) Forward voltage drop Tests conditions Tj = 25 °C Tj = 100 °C VR = VRRM 1N5817 1N5818 1N5819 Unit 0.5 0.5 0.5 mA 10 10 10 mA Tj = 25 °C IF = 1 A 0.45 0.50 0.55 V Tj = 25 °C IF = 3 A 0.75 0.80 0.85 V 1. Pulse test : tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equations : P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 2/7 V IF(AV) Tstg 1. Parameter Doc ID 6262 Rev 5 1N5817, 1N5818, 1N5819 Figure 1. Characteristics Average forward power dissipation Figure 2. versus average forward current (1N5817/1N5818) Average forward power dissipation versus average forward current (1N5819) PF(av)(W) PF(av)(W) 0.7 0.6 d = 0.2 d = 0.1 0.5 d = 0.5 d = 0.1 0.6 d = 0.05 d = 0.2 d = 0.5 d = 0.05 0.5 0.4 d=1 d=1 0.4 0.3 0.3 0.2 0.2 T 0.1 d=tp/T IF(av) (A) 0.1 tp 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Figure 3. T Average forward current versus ambient temperature (δ = 0.5) (1N5817/1N5818) tp d=tp/T IF(av) (A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Figure 4. IF(av)(A) 1.2 1.2 Average forward current versus ambient temperature (δ = 0.5) (1N5819) IF(av)(A) Rth(j-a)=Rth(j-l)=45°C/W Rth(j-a)=Rth(j-l)=45°C/W 1.0 1.0 0.8 0.8 Rth(j-a)=100°C/W Rth(j-a)=100°C/W 0.6 0.6 0.4 0.4 T T 0.2 0.2 d=tp/T 0.0 0 Figure 5. 25 d=tp/T Tamb(°C) tp 50 75 100 125 150 Normalized avalanche power derating versus pulse duration 0.0 0 Figure 6. PARM(tp) PARM(1 µs) Tamb(°C) tp 25 50 75 100 125 150 Normalized avalanche power derating versus junction temperature PARM(Tj) PARM(25 °C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 25 Doc ID 6262 Rev 5 50 75 100 125 150 3/7 Characteristics Figure 7. 10 1N5817, 1N5818, 1N5819 Non repetitive surge peak forward Figure 8. current versus overload duration (maximum values) (1N5817/1N5818) IM(A) 8 9 6 7 6 5 Ta=25°C 5 Ta=25°C Ta=75°C 4 Ta=75°C 4 3 3 Ta=100°C Ta=100°C 2 IM 1 IM t 1E-2 Figure 9. 1 t(s) d=0.5 0 1E-3 1.0 IM(A) 7 8 2 Non repetitive surge peak forward current versus overload duration (maximum values) (1N5819) 1E-1 1E+0 Relative variation of thermal impedance junction to ambient versus pulse duration t t(s) d=0.5 0 1E-3 1E-2 1E-1 1E+0 Figure 10. Junction capacitance versus reverse voltage applied (typical values) C(pF) Zth(j-a)/Rth(j-a) 500 (epoxy printed circuit board, e(Cu) = 35 mm, recommended pad layout) F=1MHz Tj=25°C 0.8 200 1N5817 0.6 100 δ = 0.5 1N5818 50 0.4 δ = 0.2 0.2 T δ = 0.1 0.0 1E-1 20 δ=tp/T tp(s) Single pulse 1E+0 1E+1 VR(V) tp 1E+2 1E+3 Figure 11. Reverse leakage current versus reverse voltage applied (typical values) (1N5817/1N5818) 1E+1 1N5819 10 1 1E+1 40 1E+0 Tj=100°C Tj=100°C 1E-1 1E-2 1E-2 Tj=25°C Tj=25°C VR(V) 4/7 20 Tj=125°C 1N5817 1E-1 1E-3 10 IR(mA) 1N5818 Tj=125°C 5 Figure 12. Reverse leakage current versus reverse voltage applied (typical values) (1N5819) IR(mA) 1E+0 2 0 5 10 15 VR(V) 20 25 30 1E-3 0 Doc ID 6262 Rev 5 5 10 15 20 30 35 40 1N5817, 1N5818, 1N5819 Characteristics Figure 13. Forward voltage drop versus forward current (typical values) (1N5817/1N5818) 10.00 Figure 14. Forward voltage drop versus forward current (typical values) (1N5819) IFM(A) 10.00 IFM(A) 1.00 1.00 Tj=100°C Tj=100°C Tj=125°C Tj=125°C Tj=25°C 0.10 0.01 0.0 VFM(V) 0.1 0.2 0.3 0.4 Tj=25°C 0.10 0.5 0.6 0.7 0.8 0.9 VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Figure 15. Non repetitive surge peak forward current versus number of cycles 30 IFSM(A) F=50Hz Tj initial=25°C 25 20 15 10 5 Number of cycles 0 1 10 100 Doc ID 6262 Rev 5 1000 5/7 Package Information 2 1N5817, 1N5818, 1N5819 Package Information ● Epoxy meets UL94, V0 ● Band indicates cathode In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. DO-41 (Plastic) dimensions Dimensions Ref. 3 Max. Min. Max. A 4.07 5.20 0.160 0.205 B 2.04 2.71 0.080 0.107 C 25.4 D 0.71 0.86 0.028 0.034 Ordering information Order code Marking Package Weight Base qty Delivery mode 1N581x Part number cathode ring DO-41 0.34 g 2000 Ammopack 1N581xRL Part number cathode ring DO-41 0.34 g 5000 Tape and reel Revision history Table 7. 6/7 1 Ordering information Table 6. 4 C A Inches Min. ØD ØB C Millimeters Document revision history Date Revision Jul-2003 4A 04-Jul-2011 5 Changes Last update. Updated Table 5.: DO-41 (Plastic) dimensions. Doc ID 6262 Rev 5 1N5817, 1N5818, 1N5819 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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