STS6601 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 110 @ VGS=-10V -60V SOT-26 package. -3.2A 160 @ VGS=-4.5V D S OT26 Top View D D G 1 2 3 6 D 5 4 D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage ID Drain Current-Continuous IDM Limit -60 ±20 Gate-Source Voltage -Pulsed TA=25°C TA=70°C a b a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range Units -3.2 V V A -2.6 A -12 A TA=25°C 2 W TA=70°C 1.28 W -55 to 150 °C 62.5 °C/W THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Sep,30,2008 1 www.samhop.com.tw STS6601 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -60 Typ Max Units V uA -1 ±100 nA -2.0 -3 V 88 110 m ohm VGS=-4.5V , ID=-2.6A 120 160 m ohm VDS=-10V , ID=-3.2A 6.3 S VDS=-30V,VGS=0V f=1.0MHz 745 69 42 pF pF pF 12 12 VDS=-48V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-3.2A -1.0 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge c VDD=-30V ID=-1A VGS=-10V RGEN=6 ohm 65.8 22 ns ns ns ns VDS=-30V,ID=-3.2A,VGS=-10V 13.5 nC VDS=-30V,ID=-3.2A,VGS=-4.5V 6.5 nC VDS=-30V,ID=-3.2A, VGS=-10V 1.5 nC nC 3.2 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-2A -0.8 -2.0 A -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Sep,30,2008 2 www.samhop.com.tw STS6601 Ver 1.0 15 10 V G S = -10V -ID, Drain Current(A) -I D, Drain Current(A) V G S = -4.5V 8 V G S = -3.5V 6 V G S = -4V 4 V G S = -3V 2 12 9 6 25 C 3 125 C 0 2.0 1.5 1.0 0.5 2.5 0 3.0 -V DS, Drain-to-Source Voltage(V) 200 1.8 R DS(on), On-Resistance Normalized R DS(on)(m Ω) 2.0 160 VG S =-4.5V 120 VG S =-10V 40 2 1 4 6 8 2.7 3.6 4.5 5.2 V G S =-10V I D =-3.2A 1.6 1.4 1.2 V G S =-4.5V I D = -2.6A 1.0 0 10 0 25 50 75 100 125 150 T j ( °C ) -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 1.8 Figure 2. Transfer Characteristics 240 80 0.9 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 -55 C 0 0 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,30,2008 3 www.samhop.com.tw STS6601 Ver 1.0 300 20 -Is, Source-drain current(A) I D =-3.2A R DS(on)(m Ω) 250 200 125 C 150 100 75 C 25 C 50 0 0 2 4 6 8 10 125 C 75 C 1 10 0 -VGS, Gate-to-Source Voltage(V) 0.6 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 1200 1000 C, Capacitance(pF) 0.3 -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage C is s 800 600 400 Cos s 200 C rs s 0 0 10 5 15 20 25 V DS = -30V I D =-3.2A 8 6 4 2 0 0 30 2 4 -V DS, Drain-to-Source Voltage(V) 8 6 10 12 14 16 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 50 600 100 60 TD(off) Tr -ID, Drain Current(A) 10 Switching Time(ns) 25 C TD(on) Tf 10 V DS =-30V,ID=-1A 1 RD 6 10 Rg, Gate Resistance(Ω) it 10 10 1m ms 0u s s DC 0.1 0.01 0.1 60 100 300 600 ( L im 1 V G S =-10V 1 S ) ON V G S =-10V S ingle P ulse T c=25 C 1 10 100 300 -VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Sep,30,2008 4 www.samhop.com.tw STS6601 Ver 1.0 V DD ton RL V IN tf 90% 90% D V OUT V OUT VG S R GE N toff td(off) tr td(on) 10% INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH Figure 14. Switching Waveforms Figure 13. Switching Test Circuit Normalized Transient Thermal Resistance 10 0.5 1 0.2 0.1 P DM t1 0.05 0.1 t2 0.02 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Sep,30,2008 5 www.samhop.com.tw STS6601 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SOT26 Sep,30,2008 6 www.samhop.com.tw STS6601 Ver 1.0 SOT 26 Tape and Reel Data SOT 26 Carrier Tape +0.10 О1.50 0.00 3.50 + 0.05 4.00 + 0.10 1.75 + 0.10 2.00 + 0.05 8.0 + 0.30 A B B A 4.00 + 0.10 3.3 + 0.1 .3 R0 5 Bo 3.2 + 0.1 R0 . 3 5 M ax 0.25 + 0.05 +0.10 О1.00 0.00 R0 . 3 R0 .3 M ax SECTION B-B Ko 1.5 + 0.1 SECTION A-A SOT 26 Reel О60 + 0.5 О178.0 + 0.5 1.50 10.6 2.2 + 0.5 +1.5 9.0 -0 О13.5 + 0.5 SCALE 2:1 SOT 26 Sep,30,2008 7 www.samhop.com.tw