STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET Features RDS(on) max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z 650 V <0.640 Ω 10 A 150 W ID ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability PW 35 W 2 1 2 TO-220 TO-220FP 2 3 1 TO-247 Application ■ 3 3 1 Figure 1. Internal schematic diagram D(2) Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STP12NK60Z P12NK60Z TO-220 Tube STF12NK60Z F12NK60Z TO-220FP Tube STW12NK60Z W12NK60Z TO-247 Tube October 2009 Doc ID 11324 Rev 7 1/15 www.st.com 15 Contents STP12NK60Z, STF12NK60Z, STW12NK60Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ±30 V ID IDM 10 10 (1) A 6.3 6.3 (1) A Drain current (pulsed) 40 40 (1) A Total dissipation at TC = 25 °C 150 35 W Derating factor 1.2 0.27 W/°C 2500 V Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C (2) PTOT VESD(G-S) Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t =1 s;TC = 25 °C) Tstg Storage temperature Tj 4.5 V/ns 2500 V -55 to 150 °C 150 °C Max operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD = 480 V Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-247 TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Table 4. 0.83 62.5 50 3.6 °C/W 62.5 °C/W 300 °C Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 10 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD=50 V) 260 mJ Doc ID 11324 Rev 7 3/15 Electrical characteristics 2 STP12NK60Z, STF12NK60Z, STW12NK60Z Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 5 A 0.53 0.64 Ω Min. Typ. Max. Unit V(BR)DSS Table 6. Symbol 600 3 V Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS=10 V, ID = 5 A - 9 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 1740 195 49 - pF pF pF Coss eq. (2) Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 101 - pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 5 A, RG=4.7 Ω VGS = 10 V (see Figure 19) - 22.5 18.5 55 31.5 - ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 10 A, VGS = 10 V (see Figure 20) - 59 10 32 - nC nC nC 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Table 7. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Electrical characteristics Test conditions Min Typ. Max Unit - 10 40 A A ISD = 10 A, VGS = 0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs VDD = 50 V (see Figure 24) - 358 3 17 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150 °C (see Figure 24) - 460 4.2 18.2 ns µC A Min Typ Max Unit 30 - - V 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol BVGSO (1) Gate-source Zener diode Parameter Gate-Source breakdown voltage Test conditions Igs=± 1 mA (open drain) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 11324 Rev 7 5/15 Electrical characteristics STP12NK60Z, STF12NK60Z, STW12NK60Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 Figure 7. Thermal impedance for TO-220FP ID (A) 10µs ai s (o DS Op Lim erat ite ion d b in y m this ax a r R e 100µs n) 10 1 1ms Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 Figure 6. 6/15 1 10 100 VDS(V) Safe operating area for TO-220FP Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Figure 8. Output characteristics Figure 10. Transconductance Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 11324 Rev 7 7/15 Electrical characteristics STP12NK60Z, STF12NK60Z, STW12NK60Z Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized breakdown voltage vs temperature Figure 18. Maximum avalanche energy vs temperature HV27640 EAS (mJ) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0 8/15 ID=10 A VDD=50 V 20 40 60 80 100 120 140 TJ(°C) Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 11324 Rev 7 10% AM01473v1 9/15 Package mechanical data 4 STP12NK60Z, STF12NK60Z, STW12NK60Z Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 11324 Rev 7 11/15 Package mechanical data STP12NK60Z, STF12NK60Z, STW12NK60Z TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 12/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Package mechanical data TO-247 mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 S 3.65 5.50 5.50 Doc ID 11324 Rev 7 13/15 Revision history 5 STP12NK60Z, STF12NK60Z, STW12NK60Z Revision history Table 9. 14/15 Document revision history Date Revision Changes 12-Apr-2004 1 First release 06-Sep-2005 2 Inserted ecopack indication 13-Sep-2005 3 Final version 05-Sep-2006 4 The document has been reformatted 26-Apr-2007 5 The document has been updated on 1: Electrical ratings 25-Jan-2008 6 Modified: dv/dt value on Table 2: Absolute maximum ratings 13-Oct-2009 7 Added new package, mechanical data: TO-247 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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