SEMIWELL STW25A60

STW25A60
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Symbol
○
Features
2.T2
▼▲
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 25 A )
○
◆ High Commutation dv/dt
1.T1
3.Gate
○
TO-247
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature modulation control, lighting control and static switching relay.
1
Absolute Maximum Ratings
Symbol
2
3
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
600
V
25
A
225/250
A
I2 t
260
A2 s
Peak Gate Power Dissipation
5.0
W
Average Gate Power Dissipation
0.5
W
IGM
Peak Gate Current
2.0
A
VGM
Peak Gate Voltage
10
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
6.2
g
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
TC = 86 °C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
PGM
PG(AV)
TJ
TSTG
Mass
Oct, 2002. Rev. 1
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
STW25A60
Electrical Characteristics
Symbol
Conditions
Ratings
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
5.0
mA
VTM
Peak On-State Voltage
IT = 35 A, Inst. Measurement
─
─
1.4
V
─
─
30
─
─
30
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
30
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
0.2
─
─
V
6
─
─
V/㎲
─
35
─
mA
─
─
1.3
°C/W
VGD
(dv/dt)c
IH
Rth(j-c)
2/5
Items
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -12.5 A/ms,
VD=2/3 VDRM
Holding Current
Thermal Impedance
Junction to case
mA
V
STW25A60
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
3
10
VGM (10V)
1
On-State Current [A]
PGM (5W)
PG(AV) (0.5W)
25 ℃
IGM (2A)
Gate Voltage [V]
10
0
10
o
TJ = 125 C
o
TJ = 25 C
1
10
VGD (0.2V)
-1
10
2
10
0
1
2
10
10
3
10
10
0.5
1.0
1.5
Power Dissipation [W]
θ
θ
θ
θ
θ
θ
2π
θ
25
360°
20
θ
: Conduction Angle
o
= 180
o
= 150
o
= 120
o
= 90
o
= 60
θ = 30
15
Allowable Case Temperature [ oC]
35
π
2.5
3.0
3.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
30
2.0
On-State Voltage [V]
Gate Current [mA]
o
10
5
130
120
110
θ
π
100
θ = 30
2π
o
θ = 60
o
θ = 90
o
θ = 120
o
θ = 150o
θ = 180
θ
360°
90
θ
o
: Conduction Angle
80
0
0
5
10
15
20
25
0
30
5
10
15
20
25
30
RMS On-State Current [A]
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
280
200
120
50Hz
o
o
160
VGT (25 C)
60Hz
VGT (t C)
Surge On-State Current [A]
240
1
V
V
80
V
+
GT1
_
GT1
_
GT3
40
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/5
STW25A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
o
_
GT3
o
o
IGT (t C)
IGT (25 C)
I
Transient Thermal Impedance [ C/W]
10
1
I
I
+
GT1
_
GT1
0.1
-50
0
50
100
1
0.1
-2
10
150
-1
0
10
o
1
10
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
▼▲
●
A
V
4/5
10Ω
▼▲
●
6V
RG
A
V
●
6V
RG
A
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
RG
STW25A60
TO-247 Package Dimension
mm
Dim.
Min.
Inch
Typ.
Max.
Min.
Typ.
Max.
A
15.77
16.03
0.621
0.631
B
20.80
21.10
0.819
0.831
C
20.05
20.31
0.789
0.800
D
4.48
4.58
0.176
0.180
E
4.27
4.37
0.168
0.172
F
5.32
5.58
0.209
0.220
G
4.90
5.16
0.193
0.203
H
1.90
2.06
0.075
0.081
I
2.35
2.45
0.093
0.096
J
0.6
0.024
K
1.93
2.13
0.076
0.084
L
1.07
1.33
0.042
0.052
M
2.99
3.25
0.118
0.128
φ
3.56
3.66
0.140
0.144
G
A
B
H
D
φ
I
C
E
L
1
2
M
3
F
J
1. T1
2. T2
3. Gate
K
5/5