SANYO TF246

TF246
Ordering number : ENA0729
SANYO Semiconductors
DATA SHEET
TF246
N-channel Silicon Junction FET
Electret Condenser Microphone Applications
Features
•
•
•
•
•
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage
Conditions
Ratings
VGDO
IG
Gate Current
Drain Current
Unit
--20
V
10
mA
Junction Temperature
ID
PD
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Allowable Power Dissipation
1
mA
30
mW
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Conditions
Ratings
min
V(BR)GDO
VGS(off)
IG=--100µA
VDS=5V, ID=1µA
--0.2
IDSS
VDS=5V, VGS=0V
140*
typ
max
--20
Unit
V
--0.6
Making : F
--1.0
V
350*
µA
Continued on next page.
* : The TF246 is classified by IDSS as follows : (unit : µA)
Rank
4
5
IDSS
140 to 240
210 to 350
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40407GB TI IM TC-00000316 No. A0729-1/4
TF246
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
Forward Transfer Admittance
yfs
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
min
typ
0.5
Unit
max
1.0
mS
3.5
pF
0.65
pF
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
Frequency Characteristic
GV
∆GVV
∆Gvf
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
Output Noise Voltage
VNO
VIN=0V, A curve
Reduced Voltage Characteristic
VIN=10mV, f=1kHz
--3.0
VIN=10mV, f=1kHz, VCC=4.5→1.5V
--0.9
dB
--3.5
dB
--1.0
dB
--110
dB
f=1kHz to 110Hz
Package Dimensions
1.2
%
Test Circuit
unit : mm (typ)
7055-001
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
!
1kΩ
33µF
+
15pF
VCC=4.5V
VCC=1.5V
VTVM V
1 : Drain
2 : Source
3 : Gate
!
Output Impedance
SANYO : USFP
ID -- VDS
500
450
450
400
400
350
300
VGS=0V
250
200
--0.1V
150
--0.2V
100
--0.3V
--0.4V
50
0
1
2
3
4
5
6
ID -- VDS
500
Drain Current, ID -- µA
Drain Current, ID -- µA
B A
0
THD
OSC
7
--0.5V
350
300
VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
0
8
Drain-to-Source Voltage, VDS -- V
9
10
IT02310
0
1
2
3
--0.5V
4
Drain-to-Source Voltage, VDS -- V
5
IT03015
No. A0729-2/4
TF246
360
400
320
µA
50
3
=
SS
A
ID
0µ
25
A
0µ
15
200
150
100
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
Gate-to-Source Voltage, VGS -- V
120
0
--1.0
0
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
Gate-to-Source Voltage, VGS -- V
Cutoff Voltage, VGS(off) -- V
1.0
0.9
0.8
0.7
0.6
--0
IT02313
VDS=5V
ID=1µA
-0.75
1.1
--0.1
VGS(off) -- IDSS
-0.80
VDS=5V
VGS=0V
f=1kHz
1.2
--0.9
IT02312
yfs -- IDSS
1.3
Forward Transfer Admittance, yfs -- mS
160
40
0
--0.7
-0.70
-0.65
-0.60
-0.55
-0.50
-0.45
0.5
-0.40
0
100
200
300
400
Drain Current, IDSS -- µA
500
IT02314
0
100
200
7
5
3
2
Reverse Transfer Capacitance, Crss -- pF
10
400
500
IT12277
Crss -- VDS
5
VGS=0V
f=1MHz
300
Drain Current, IDSS -- µA
Ciss -- VDS
2
Input Capacitance, Ciss -- pF
200
80
50
VGS=0V
f=1MHz
3
2
1.0
7
5
3
2
0.1
1.0
7
2
1.0
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
7
3
Reduced Voltage Characteristic, ∆GVV -- dB
GV : VCC=4.5V
VIN=10mV
RL=1.0kΩ
f=1MHz
IDSS : VDS=5.0V
--1
--2
--3
--4
--5
--6
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT09954
2
1.0
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
IT03814
GV -- IDSS
0
Voltage Gain, GV -- dB
280
240
25
°C
350
300
VDS=5V
Ta
=7
5°
C
Drain Current, ID -- µA
Drain Current, ID -- µA
450
250
ID -- VGS
400
VDS=5V
--2
5°
C
ID -- VGS
500
3
IT03815
∆GVV -- IDSS
--0.5
∆GVV : VCC=4.5V→1.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
--0.7
--0.9
--1.1
--1.3
--1.5
--1.7
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT02321
No. A0729-3/4
TF246
THD -- VIN
250µA
10
150µA
I DSS=
350µA
1.0
0.1
THD : VCC=4.5V
VIN=30mV
f=1MHz
IDSS : VDS=5.0V
2.0
1.5
1.0
0.5
0
0
50
100
150
Input Voltage, VIN -- mV
200
0
--114
--115
--116
--117
--118
--119
Allowable Power Dissipation, PD -- mW
--113
200
300
400
500
IT09955
Drain Current, IDSS -- µA
PD -- Ta
35
VNO : VCC=4.5V
VIN=0V, ACurve
RL=1.0kΩ
IDSS : VDS=5.0V
--112
100
IT02316
VNO -- IDSS
--111
Output Noise Voltage, VNO -- dB
THD -- IDSS
2.5
THD : VCC=4.5V
f=1kHz
VIN=30mV
IDSS : VDS=5.0V
Total Harmonic Distortion, THD -- %
Total Harmonic Distortion, THD -- %
100
30
25
20
15
10
5
0
--120
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT02325
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT12179
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0729-4/4