TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation FEATURES • Supply voltage 2.4 V to 5.5 V, operating idle current (receive mode) < 3.3 mA, shutdown current < 1 µA over full temperature range • Surface mount package, top and side view, 9.7 mm x 4.7 mm x 4 mm 20110 • Operating temperature - 25 °C to 85 °C • Transmitter wavelength typ. 886 nm, supporting IrDA and remote control DESCRIPTION The TFDU6103 is a low-power infrared transceiver module compliant to the latest IrDA® physical layer standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR), and carrier based remote control modes up to 2 MHz. Integrated within the transceiver module are a PIN photodiode, an infrared emitter (IRED), and a low-power CMOS control IC to provide a total front-end solution in a single package. Vishay FIR transceivers are available in different package options, including this BabyFace package (TFDU6103). This wide selection provides flexibility for a variety of applications and space constraints. The transceivers are capable of directly interfacing with a wide variety of I/O devices which perform the modulation/demodulation function, including National Semiconductor’s PC87338, PC87108 and PC87109, SMC’s FDC37C669, FDC37N769 and CAM35C44, and Hitachi’s SH3. TFDU6103 has a tri-state output and is floating in shut-down mode with a weak pull-up. • IrDA compliant, link distance > 1 m, ± 15°, window losses are allowed to still be inside the IrDA spec. • Remote control range > 8 m, typ. 22 m • ESD > 1 kV • Latchup > 100 mA • EMI immunity > 550 V/m for GSM frequency and other mobile telephone bands/(700 MHz to 2000 MHz, no external shield) • Split power supply, LED can be driven by a separate power supply not loading the regulated supply. U.S. pat. no. 6,157,476 • Tri-state-receiver output, floating in shut down with a weak pull-up • Eye safety class 1 (IEC 60825-1, ed. 2001), limited LED on-time, LED current is controlled, no single fault to be considered • Qualified for lead (Pb)-free and Sn/Pb processing (MSL4) • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC APPLICATIONS and in • Notebook computers, desktop PCs, palmtop computers (Win CE, Palm PC), PDAs • Digital still and video cameras • Printers, fax machines, photocopiers, screen projectors • Telecommunication products (cellular phones, pagers) • Internet TV boxes, video conferencing systems • External infrared adapters (dongles) • Medical an industrial data collection PRODUCT SUMMARY PART NUMBER TFDU6103 DATA RATE (kbit/s) DIMENSIONS HxLxW (mm x mm x mm) LINK DISTANCE (m) OPERATING VOLTAGE (V) IDLE SUPPLY CURRENT (mA) 4000 4 x 9.7 x 4.7 0 to 1 2.4 to 5.5 2 PARTS TABLE PART DESCRIPTION QTY/REEL TFDU6103-TR3 Oriented in carrier tape for side view surface mounting 1000 pcs TFDU6103-TT3 Oriented in carrier tape for top view surface mounting 1000 pcs Document Number: 81211 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Rev. 1.4, 29-Jul-09 www.vishay.com 1 TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation FUNCTIONAL BLOCK DIAGRAM VCC1 Tri-State Driver Amplifier RXD Comparator VCC2 Logic and SD Controlled Driver Control TXD IRED C GND 18468 PINOUT TFDU6103 weight 0.2 g ”U” Option Baby Face (universal) IRED 1 2 17087 Detector 3 4 5 6 7 8 Definitions: In the Vishay transceiver datasheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR low power standard. IrPhy 1.3 extended the low power option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case obsoletes the former version. Note We apologize to use sometimes in our documentation the abbreviation LED and the word light emitting diode instead of infrared emitting diode (IRED) for IR-emitters. That is by definition wrong; we are here following just a bad trend. Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time. PIN DESCRIPTION PIN NUMBER SYMBOL DESCRIPTION 1 VCC2 IRED anode Connect IRED anode directly to VCC2. For voltages higher than 3.6 V an external resistor might be necessary for reducing the internal power dissipation. An unregulated separate power supply can be used at this pin 2 IRED cathode IRED cathode, internally connected to driver transistor 3 TXD 4 I/O ACTIVE This input is used to transmit serial data when SD is low. An on-chip protection circuit disables the LED driver if the TXD pin is asserted for longer than 100 µs. When used in conjunction with the SD pin, this pin is also used to set receiver speed mode I High RXD Received data output, push-pull CMOS driver output capable of driving a standard CMOS or TTL load. No external pull-up or pull-down resistor is required. Floating with a weak pull-up of 500 k (typ.) in shutdown mode O Low 5 SD Shutdown, also used for dynamic mode switching. Setting this pin active places the module into shutdown mode. On the falling edge of this signal, the state of the TXD pin is sampled and used to set receiver low bandwidth (TXD = low, SIR) or high bandwidth (TXD = high, MIR and FIR) mode I High 6 VCC1 Supply voltage 7 NC 8 GND www.vishay.com 2 Ground Document Number: 81211 For technical questions within your region, please contact one of the following: Rev. 1.4, 29-Jul-09 [email protected], [email protected], [email protected] TFDU6103 Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors for 2.4 V to 5.5 V Operation ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL MIN. Supply voltage range, transceiver 0 V < VCC2 < 6 V VCC1 Supply voltage range, transmitter 0 V < VCC1 < 6 V VCC2 Input currents TYP. MAX. UNIT - 0.5 +6 V - 0.5 + 6.5 V 10 mA For all pins, except IRED anode pin Output sinking current Power dissipation See derating curve, figure 6 Junction temperature Ambient temperature range (operating) Storage temperature range Soldering temperature mW TJ 125 °C Tamb - 25 + 85 °C Tstg - 25 + 85 °C 260 °C 125 mA IIRED (DC) < 90 µs, ton < 20 % IRED anode voltage Voltage at all inputs and outputs mA 500 See recommended solder profile (see figure 4) Average output current Repetitive pulse output current 25 PD IIRED (RP) VIREDA VIN > VCC1 is allowed - 0.5 VIN 600 mA + 6.5 V 5.5 V Note Reference point ground pin 8, unless otherwise noted. Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time. EYE SAFETY INFORMATION STANDARD CLASSIFICATION IEC/EN 60825-1 (2007-03), DIN EN 60825-1 (2008-05) “SAFETY OF LASER PRODUCTS Part 1: equipment classification and requirements”, simplified method Class 1 IEC 62471 (2006), CIE S009 (2002) “Photobiological Safety of Lamps and Lamp Systems” Exempt DIRECTIVE 2006/25/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 5th April 2006 on the minimum health and safety requirements regarding the exposure of workers to risks arising from physical agents (artificial optical radiation) (19th individual directive within the meaning of article 16(1) of directive 89/391/EEC) Exempt Note Vishay transceivers operating inside the absolute maximum ratings are classified as eye safe according the above table. ELECTRICAL CHARACTERISTICS PARAMETER (1) TEST CONDITIONS SYMBOL MIN. VCC 2.4 TYP. MAX. UNIT 5.5 V TRANSCEIVER Supply voltage Dynamic supply current Shutdown supply current Receive mode only, idle In transmit mode, add additional 85 mA (typ.) for IRED current. Add RXD output current depending on RXD load. SIR mode ICC 1.8 3 mA MIR/FIR mode ICC 2 3.3 mA SD = high T = 25 °C, not ambient light sensitive, detector is disabled in shutdown mode ISD 0.01 SD = high, full specified temperature range, not ambient light sensitive ISD µA 1 µA Operating temperature range TA - 25 + 85 °C Input voltage low (TXD, SD) VIL - 0.5 0.5 V Document Number: 81211 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Rev. 1.4, 29-Jul-09 www.vishay.com 3 TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation ELECTRICAL CHARACTERISTICS PARAMETER (1) TEST CONDITIONS SYMBOL MIN. CMOS level (2) VIH VIN = 0.9 x VCC1 IICH TYP. MAX. UNIT VCC - 0.3 6 V -1 +1 µA 5 pF 0.4 V TRANSCEIVER Input voltage high (TXD, SD) Input leakage current (TXD, SD) Input capacitance, TXD, SD CI Output voltage low IOL = 500 µA, Cload = 15 pF VOL Output voltage high IOH = 250 µA, Cload = 15 pF VOH Output RXD current limitation high state low state Short to ground Short to VCC1 SD shutdown pulse duration Activating shutdown V 30 RXD to VCC1 impedance SD mode programming pulse duration 0.9 x VCC1 All modes RRXD 400 tSDPW 200 500 20 20 mA mA µs 600 k ns Note (1) T amb = 25 °C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted. Typical values are for design aid only, not guaranteed nor subject to production testing. (2) The typical threshold level is 0.5 x V CC1 (VCC1 = 3 V). It is recommended to use the specified min./max. values to avoid increased operating current. OPTOELECTRONIC CHARACTERISTICS PARAMETER (1) TEST CONDITIONS SYMBOL 9.6 kbit/s to 115.2 kbit/s = 850 nm to 900 nm Minimum irradiance Ee in angular range, MIR mode MIN. TYP. MAX. UNIT Ee 25 (2.5) 35 (3.5) mW/m2 (µW/cm2) 1.152 Mbit/s = 850 nm to 900 nm Ee 65 (6.5) Minimum irradiance Ee inangular range, FIR mode 4 Mbit/s = 850 nm to 900 nm Ee 80 (8) Maximum irradiance Ee in angular range (4) = 850 nm to 900 nm Ee 5 (500) (2) Ee 4 (0.4) Rise time of output signal 10 % to 90 %, 15 pF tr (RXD) 10 40 ns Fall time of output signal 90 % to 10 %, 15 pF tf (RXD) 10 40 ns Input pulse length, 1.4 µs < PWopt < 25 µs tPW Input pulse length, 1.4 µs < PWopt < 25 µs, - 25 °C < T < 85 °C (5) tPW 1.5 1.8 2.6 µs Input pulse length, PWopt = 217 ns, 1.152 Mbit/s tPW 110 250 270 ns Input pulse length, PWopt = 125 ns, 4 Mbit/s tPW 100 140 ns Input pulse length, PWopt = 250 ns, 4 Mbit/s tPW 225 275 ns RECEIVER Minimum irradiance Ee in angular range (3) SIR mode Maximum no detection irradiance RXD pulse width of output signal, 50 %, SIR mode RXD pulse width of output signal, 50 %, MIR mode RXD pulse width of output signal, 50 %, FIR mode Stochastic jitter, leading edge Receiver start up time Latency www.vishay.com 4 mW/m2 (µW/cm2) 90 (9) mW/m2 (µW/cm2) kW/m2 (mW/cm2) mW/m2 (µW/cm2) 2.1 µs Input irradiance = 100 mW/m2, 4 Mbit/s 20 ns Input irradiance = 100 mW/m2, 1.152 Mbit/s 40 ns Input irradiance = 100 mW/m2, 576 kbit/s 80 ns Input irradiance = 100 mW/m2, 115.2 kbit/s 350 ns After completion of shutdown programming sequence power on delay 250 µs 100 µs tL 40 Document Number: 81211 For technical questions within your region, please contact one of the following: Rev. 1.4, 29-Jul-09 [email protected], [email protected], [email protected] TFDU6103 Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors for 2.4 V to 5.5 V Operation OPTOELECTRONIC CHARACTERISTICS PARAMETER (1) TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Note: no external current limiting resistor is needed for VCC1 = VCC2 = 3.3 V ID 330 440 600 mA TRANSMITTER IRED operating current, switched current limiter Output pulse width limitation Input pulse width t < 20 µs tpw Input pulse width 20 µs < t < 150 µs tpw Input pulse width t 150 µs tpw_lim Output leakage IRED current t 18 IIRED -1 µs 150 µs 150 µs 1 µA Output radiant intensity, see figure 1, recommended application circuit VCC = VIRED = 3.3 V, = 0° TXD = high, SD = low, R1 = 1 Ie 110 170 468 (6) mW/sr Output radiant intensity, see figure 1, recommended application circuit VCC = VIRED = 3.3 V, = 0°, 15° TXD = high, SD = low, R1 = 1 Ie 100 130 468 (6) mW/sr VCC1 = 3.3 V, = 0°, 15° TXD = low or SD = high (receiver is inactive as long as SD = high) Ie 0.04 mW/sr Output radiant intensity Output radiant intensity, angle of half intensity Peak - emission wavelength p (7) 875 Spectral bandwidth Optical rise time, Optical fall time Optical output pulse duration ± 24 886 deg 900 45 tropt , tfopt 10 Input pulse width 217 ns, 1.152 Mbit/s topt 207 Input pulse width 125 ns, 4 Mbit/s topt 117 Input pulse width 250 ns, 4 Mbit/s topt 242 nm nm 40 ns 217 227 ns 125 133 ns 250 258 ns 25 % Optical overshoot Notes (1) T amb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted. All timing data measured with 4 Mbit/s are measured using the IrDA FIR transmission header. The data given here are valid 5 µs after starting the preamble. Typical values are for design aid only, not guaranteed nor subject to production testing. (2) This parameter reflects the backlight test of the IrDA physical layer specification to guarantee immunity against light from fluorescent lamps. (3) IrDA sensitivity definition: minimum irradiance E in angular range, power per unit area. The receiver must meet the BER specification while e the source is operating at the minimum intensity in angular range into the minimum half-angular range at the maximum link length. (4) Maximum irradiance E in angular range, power per unit area. The optical delivered to the detector by a source operating at the maximum e intensity in angular range at minimum link length must not cause receiver overdrive distortion and possible related link errors. If placed at the active output interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification. For more definitions see the document “Symbols and Terminology” on the Vishay website (5) Retriggering once during applied optical pulse may occur. (6) Maximum value is given by eye safety class 1, IEC 60825-1, simplified method. (7) Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for the standard remote control applications with codes as e.g. Philips RC5/RC6® or RECS 80. When operated under IrDA full range conditions (125 mW/sr) the RC range to be covered is in the range from 8 m to 12 m, provided that state of the art remote control receivers are used. Document Number: 81211 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Rev. 1.4, 29-Jul-09 www.vishay.com 5 TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation RECOMMENDED CIRCUIT DIAGRAM Vishay Semiconductors transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long, resistive and inductive wiring should be avoided. The inputs (TXD, SD) and the output RXD should be directly (DC) coupled to the I/O circuit. V cc2 R1 V cc1 R2 C1 C3 GND IRED Anode V cc C2 Ground SD SD TXD TXD RXD RXD IRED Cathode 19789 Fig. 1 - Recommended Application Circuit The capacitor C1 is buffering the supply voltage and reduces the influence of the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. The resistor R1 is only necessary for higher operating voltages and elevated temperatures, see derating curve in figure 6, to avoid too high internal power dissipation. The capacitors C2 and C3 combined with the resistor R2 (as the low pass filter) is smoothing the supply voltage VCC1. R2, C1, C2, and C3 are optional and dependent on the quality of the supply voltages VCC1 and VCC2 and injected noise. An unstable power supply with dropping voltage during transmission may reduce sensitivity (and transmission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 and C3 as close as possible to the transceiver power supply pins. An tantalum capacitor should be used for C1 and C3 while a ceramic capacitor is used for C2. In addition, when connecting the described circuit to the power supply, low impedance wiring should be used. When extended wiring is used the inductance of the power supply can cause dynamically a voltage drop at VCC2. Often some power supplies are not able to follow the fast current rise time. In that case another 4.7 µF (type, see table under C1) at VCC2 will be helpful. Keep in mind that basic RF-design rules for circuit design should be taken into account. Especially longer signal lines should not be used without termination. See e.g. “The Art of Electronics” Paul Horowitz, Wienfield Hill, 1989, Cambridge University Press, ISBN: 0521370957. TABLE 1 - RECOMMENDED APPLICATION CIRCUIT COMPONENTS COMPONENT RECOMMENDED VALUE VISHAY PART NUMBER C1, C3 4.7 µF, 16 V 293D 475X9 016B C2 0.1 µF, ceramic VJ 1206 Y 104 J XXMT R1 3.3 V supply voltage: no resistors necessary, the internal controller is able to control the current e.g. 2 x CRCW-1206-1R0-F-RT1 R2 10 , 0.125 W CRCW-1206-10R0-F-RT1 I/O AND SOFTWARE In the description, already different I/Os are mentioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. In special cases refer to the I/O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application. MODE SWITCHING The TFDU6103 is in the SIR mode after power on as a default mode, therefore the FIR data transfer rate has to be set by a programming sequence using the TXD and SD inputs as described below. The low frequency mode covers speeds up to 115.2 kbit/s. Signals with higher data rates should be detected in the high frequency mode. Lower frequency data can also be received in the high frequency mode but with reduced sensitivity. To switch the transceivers from low frequency mode to the high frequency mode and vice versa, the programming sequences described below are required. www.vishay.com 6 SETTING TO THE HIGH BANDWIDTH MODE (0.576 Mbit/s to 4 Mbit/s) 1. Set SD input to logic “high”. 2. Set TXD input to logic “high”. Wait ts 200 ns. 3. Set SD to logic “low” (this negative edge latches state of TXD, which determines speed setting). 4. After waiting th 200 ns TXD can be set to logic “low”. The hold time of TXD is limited by the maximum allowed pulse length. After that TXD is enabled as normal TXD input and the transceiver is set for the high bandwidth (576 kbit/s to 4 Mbit/s) mode. Document Number: 81211 For technical questions within your region, please contact one of the following: Rev. 1.4, 29-Jul-09 [email protected], [email protected], [email protected] TFDU6103 Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors for 2.4 V to 5.5 V Operation SETTING TO THE LOWER BANDWIDTH MODE (2.4 kbit/s to 115.2 kbit/s) 1. Set SD input to logic “high”. 2. Set TXD input to logic “low”. Wait ts 200 ns. 3. Set SD to logic “low” (this negative edge latches state of TXD, which determines speed setting). 50 % SD 4. TXD must be held for th 200 ns. After that TXD is enabled as normal TXD input and the transceiver is set for the lower bandwidth (9.6 kbit/s to 115.2 kbit/s) mode. Note When applying this sequence to the device already in the lower bandwidth mode, the SD pulse is interpreted as shutdown. In this case the RXD output of the transceiver may react with a single pulse (going active low) for a duration less than 2 µs. The operating software should take care for this condition. In case the applied SD pulse is longer than 4 µs, no RXD pulse is to be expected but the receiver startup time is to be taken into account before the device is in receive condition. ts th High: FIR TXD 50 % 50 % Low: SIR 14873 Fig. 2 - Mode Switching Timing Diagram TABLE 2 - TRUTH TABLE INPUTS OUTPUTS SD TXD OPTICAL INPUT IRRADIANCE mW/m2 RXD High x x Weakly pulled (500 k) to VCC1 0 High x Low (active) Ie High > 150 µs x High 0 Low <4 High 0 Low > min. irradiance Ee < max. irradiance Ee Low (active) 0 Low > max. irradiance Ee x 0 Low RECOMMENDED SOLDER PROFILES Temperature (°C) Solder Profile for Sn/Pb Soldering 260 240 220 200 180 160 140 120 100 80 60 40 20 0 TRANSMITTER 240 °C max. 10 s max. at 230 °C 2 to 4 °C/s 160 °C max. 120 to180 s primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is used increasingly. Shown in figure 4 and 5 are Vishay's recommended profiles for use with the TFDU6103 transceivers. For more details please refer to the application note “SMD Assembly Instructions”. A ramp-up rate less than 0.9 °C/s is not recommended. Ramp-up rates faster than 1.3 °C/s could damage an optical part because the thermal conductivity is less than compared to a standard IC. 90 s max. Wave Soldering 2 to 4 °C/s 0 19535 50 100 For TFDUxxxx and TFBSxxxx transceiver devices wave soldering is not recommended. 150 200 250 300 350 Time/s Fig. 3 - Recommended Solder Profile for Sn/Pb soldering Lead (Pb)-free, Recommended Solder Profile The TFDU6103 is a lead (Pb)-free transceiver and qualified for lead (Pb)-free processing. For lead (Pb)-free solder paste like Sn (3.0 - 4.0) Ag (0.5 - 0.9) Cu, there are two standard reflow profiles: Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-Soak-Spike profile was developed Manual Soldering Manual soldering is the standard method for lab use. However, for a production process it cannot be recommended because the risk of damage is highly dependent on the experience of the operator. Nevertheless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering. Document Number: 81211 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Rev. 1.4, 29-Jul-09 www.vishay.com 7 TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation Storage 275 T ≥ 255 °C for 10 s....30 s 250 225 Tpeak = 260 °C 85 80 75 70 65 60 55 T ≥ 217 °C for 70 s max. 200 Temperature/°C 90 Ambient Temperature (°C) The storage and drying processes for all Vishay transceivers (TFDUxxxx and TFBSxxx) are equivalent to MSL4. The data for the drying procedure is given on labels on the packing and also in the application note “Taping, Labeling, Storage and Packing”. 50 175 2 150 18097 30 s max. 125 100 90 s to 120 s 2.5 3 3.5 4 4.5 5 5.5 6 Operating Voltage (V) at Duty Cycle 20 % Fig. 6 - Temperature Derating Diagram 70 s max. 2 °C/s to 4 °C/s 75 2 °C/s to 3 °C/s 50 25 0 0 50 100 150 19532 200 250 300 350 Time/s Fig. 4 - Solder Profile, RSS Recommendation 280 Tpeak = 260 °C max. Temperature/°C 240 200 < 4 °C/s 160 1.3 °C/s 120 Time above 217 °C t ≤ 70 s Time above 250 °C t ≤ 40 s < 2 °C/s Peak temperature Tpeak = 260 °C 80 40 0 0 TFDU Fig3 50 100 150 200 250 300 Time/s Fig. 5 - RTS Recommendation CURRENT DERATING DIAGRAM Figure 6 shows the maximum operating temperature when the device is operated without external current limiting resistor. A power dissipating resistor of 2 is recommended from the cathode of the IRED to ground for supply voltages above 4 V. In that case the device can be operated up to 85 °C, too. www.vishay.com 8 Document Number: 81211 For technical questions within your region, please contact one of the following: Rev. 1.4, 29-Jul-09 [email protected], [email protected], [email protected] TFDU6103 Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors for 2.4 V to 5.5 V Operation PACKAGE DIMENSIONS in millimeters 20111 Fig. 7 - Package Drawing and Solder Footprints for Top and Side View Mounting TFDU6103, Tolerance ± 0.2 mm if not otherwise mentioned Document Number: 81211 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Rev. 1.4, 29-Jul-09 www.vishay.com 9 TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation REEL DIMENSIONS in millimeters Drawing-No.: 9.800-5090.01-4 Issue: 1; 29.11.05 14017 TAPE WIDTH (mm) A MAX. (mm) N (mm) W1 MIN. (mm) W2 MAX. (mm) W3 MIN. (mm) W3 MAX. (mm) 24 330 60 24.4 30.4 23.9 27.4 www.vishay.com 10 Document Number: 81211 For technical questions within your region, please contact one of the following: Rev. 1.4, 29-Jul-09 [email protected], [email protected], [email protected] TFDU6103 Fast Infrared Transceiver Module (FIR, 4 Mbit/s) Vishay Semiconductors for 2.4 V to 5.5 V Operation TAPE DIMENSIONS in millimeters Drawing-No.: 9.700-5251.01-4 Issue: 3; 02.09.05 19824 Fig. 8 - Tape Drawing, TFDU6103 for Top View Mounting, Tolerance ± 0.1 mm Document Number: 81211 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Rev. 1.4, 29-Jul-09 www.vishay.com 11 TFDU6103 Vishay Semiconductors Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation TAPE DIMENSIONS in millimeters 19875 Fig. 9 - Tape Drawing, TFDU6103 for Side View Mounting, Tolerance ± 0.1 mm www.vishay.com 12 Document Number: 81211 For technical questions within your region, please contact one of the following: Rev. 1.4, 29-Jul-09 [email protected], [email protected], [email protected] Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1