MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE TM130RZ/EZ/GZ-24,-2H • IT (AV) • IF (AV) • VRRM • • • • Average on-state current .......... 130A Average forward current .......... 130A Repetitive peak reverse voltage .... 1200/1600V VDRM Repetitive peak off-state voltage .... 1200/1600V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 (RZ Type) APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (RZ) φ6.5 M8 A1 K1 K2 CR A2 K1 A2 A1 40 20 K2 SR K1 G1 16 30 18 32 68.5 16 30 (EZ) 68.5 CR 150 A2 A1 K 1 K2 Tab#110, t=0.5 23 9 32 39 18 LABEL SR A1 K 1 K2 A2 SR (RZ Type) K1 G1 (GZ) CR 7 6 K1 G1 K1 G1 (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol 24 2H Unit VRRM Repetitive peak reverse voltage 1200 1600 V VRSM Non-repetitive peak reverse voltage 1350 1700 V VR (DC) DC reverse voltage 960 1280 V VDRM Repetitive peak off-state voltage 1200 1600 V VDSM Non-repetitive peak off-state voltage 1350 1700 V VD (DC) DC off-state voltage 960 1280 V Ratings Unit 205 A Single-phase, half-wave 180° conduction, TC=78°C 130 A Surge (non-repetitive) current One half cycle at 60Hz, peak value 2600 A I2t I2t for fusing Value for one cycle of surge current 2.8 × 104 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 10 W PG (AV) Average gate power dissipation 3.0 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 4.0 A Tj Junction temperature –40~125 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Parameter Symbol IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current ITSM, IFSM Conditions Charged part to case Main terminal screw M8 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 8.83~10.8 N·m 90~110 kg·cm 1.96~3.92 N·m 20~40 kg·cm 300 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 30 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 30 mA VTM, VFM Forward voltage Tj=125°C, ITM=IFM=390A, instantaneous meas. — — 1.5 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.22 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.1 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) — — — Tj Tstg dv/dt VGT VGD IGT — — — — I2t di/dt Thyristor Diode Item PGM PG (AV) VFGM IFGM — — — — — Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM VTM IDRM VFM Rth (j-c) Rth (c-f) Thyristor — Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 3200 2800 SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 4 7 5 3 2 Tj=125°C 2400 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.6 RATED SURGE (NON-REPETITIVE) CURRENT 2000 1600 1200 800 400 1.0 1.4 1.8 0 2.2 FORWARD VOLTAGE (V) GATE VOLTAGE (V) 7 5 3 2 PGM=10W VGT=3.0V Tj=25°C PG(AV)= 3.0W 10 0 7 5 IGT= 100mA 3 2 10 –1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) TRANSIENT THERMAL IMPEDANCE (°C/W) VFGM=10V 10 1 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE 200 AVERAGE POWER DISSIPATION (W) 150 180° 140 CASE TEMPERATURE (°C) 120° 160 90° 60° 120 θ=30° 80 θ 360° 40 0 LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 0 400 40 80 120 160 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 110 100 90 80 70 θ=30° 60° 90° 120° 0 40 120 160 200 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 DC 270° 180° 120° 90° θ=30° 60° 80 120 θ 360° 110 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 90 80 70 60 θ=30° 0 80 AVERAGE CURRENT (A) 160 0 180° AVERAGE CURRENT (A) RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 240 120 50 200 θ 360° 320 θ 360° 130 60 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 40 80 120 160 AVERAGE CURRENT (A) 200 50 0 40 90° 180° 60° 120° 270° DC 80 120 160 200 240 280 320 AVERAGE CURRENT (A) Feb.1999