SANKEN TM561M-L

TO-220 5A Triac
TM541M-L, TM561M-L
■ Features
External Dimensions
(Unit: mm)
)
12.0 min
●Gate trigger Current: IGT=20mA max (MODE , ,
2.1max
φ 3.75±0.1
a
b
±
1.35 0.15
4.0 max
●RMS on-state current: IT(RMS)=5A
5.0max
10.4max
16.7max
0.2
3.0±0.2
8.8±
●Repetitive peak off-state voltage: VDRM=400, 600V
+0.2
0.65 – 0.1
±0.1
±
1.7 0.2
±
2.5 0.1
2.5
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
(1) (2) (3)
a. Part Number
b. Lot Number
Weight: Approx. 2.6g
■Absolute Maximum Ratings
Parameter
Symbol
Ratings
TM541M-L
TM561M-L
400
600
Unit
Conditions
Repetitive peak off-state voltage
VDRM
RMS on-state current
IT(RMS)
5.0
A
V
Conduction angle 360°, Tc=111°C
Surge on-state current
ITSM
50
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage
VGM
10
V
Peak gate current
IGM
2
A
Peak gate power loss
PGM
5
W
PG(AV)
0.5
W
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Average gate power loss
■Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
(Tj=25°C, unless otherwise specified)
Ratings
min
typ
max
0.3
2.0
0.1
1.6
0.7
Gate trigger voltage
0.7
VGT
0.8
Unit
Conditions
mA
VD=VDRM, RGK=∞, Tj=25°C
V
VD=VDRM, RGK= ∞, Tj=125°C
Pulse test, ITM=7A
+
2.0
2.0
V
VD=6V, RL=10Ω, TC=25°C
Gate trigger current
8
IGT
10
Holding current
Thermal resistance
32
VGD
IH
Rth
–
–
–
–
+
+
+
T2 , G
T2 , G
T2 , G
20
20
20
mA
VD=6V, RL=10Ω, TC=25°C
+
–
–
–
–
+
T2 , G
T2 , G
T2 , G
15
Gate non-trigger voltage
+
T2 , G
0.8
7
+
T2 , G
2.0
V
0.2
mA
5
2.7
°C/W
VD=1/2×VDRM, Tj=125°C
VD=6V
Junction to case
TM541M-L, TM561M-L
1
3.0
4.0
5
10
50
4
3
2
1
Ambient temperature Ta (°C)
Case temperature TC (°C)
125
100
75
50
25
125
100
75
4
5
0
6
50
1
2
3
4
5
6
–
1.5
1.0
0.5
0.5 1
10 2
10
103
1.5
0.2
0.5 1
10 2
10
Pulse width
0.5
0.5 1
10
5
0.2
0.5 1
10 2
10
103
25
50
75
100
Junction temperature Tj (°C)
125
5
0
25
0.2
0.5 1
50
10 2
10
Tj= –40°C
103
t w (µs)
Transient thermal resistance
Characteristics (Junction to case)
100
rth (°C/W)
(T2–, G– )
(T2+, G– )
(T2+, G+ )
10
1
– 40
1
0.5
Transient thermal resistance
Gate trigger current IGT (mA)
0.2
0
100
MODE
MODE
MODE
5
Pulse width
(VD=6V, RL=10Ω)
50
10
t w (µs)
(Typical)
0.4
103
igt
Tj= – 40°C
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
)
1
0.5
IGT temperature characteristics
0.6
(
(
Tj= – 40°C
tw
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Pulse width
0.8
gate trigger
IGT DC
current at 25°C
)
gate trigger
IGT DC
current at 25°C
103
(T2–,G– )
(T2+,G+ )
(T2+,G– )
10 2
10
(MODE – )
(Typical)
MODE
MODE
MODE
125
30
VGT temperature characteristics
1.2
100
Pulse width tw (µs)
igt
t w (µs)
(VD=6V, RL=10Ω)
75
igt (Typical)
trigger current
igt (Gate
)
at Tj and tw
1
0.5
50
1.0
trigger current
igt (Gate
)
at Tj and tw
v
)
5
)
(
10
25
vgt
Tj= – 40°C
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
(MODE – )
Tj= – 40°C
tw
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
0
Junction temperature Tj (°C)
30
igt
(
i
0
– 40
3.0
Pulse width tw (µs)
30
gate trigger
IGT DC
current at 25°C
2.5
trigger voltage
vgt ( Gate
)
at Tj and tw
(
trigger voltage
vgt ( Gate
)
at Tj and tw
103
Tj= – 40°C
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
(MODE – )
gt Gate trigger current
at Tj and tw
2.0
(MODE – )
)
gate trigger
VGT DC
voltage at 25°C
)
)
(
gate trigger
VGT DC
voltage at 25°C
gt Gate trigger voltage
at Tj and tw
(
10 2
Pulse trigger temperature Characteristics
0
– 40
1.5
2.0
vgt
Pulse width tw (µs)
1.0
1.0
(MODE – )
1.0
10
0.5
2.0
Tj= – 40°C
–20°C
tw
0°C
25°C
50°C
75°C
100°C
125°C
0.5
0.5 1
+
vgt (Typical)
vgt
1.5
–
( T2 – T1 )
RMS on-state current IT(RMS) (A)
(MODE – )
2.0
0
RMS on-state current IT(RMS) (A)
Pulse trigger temperature Characteristics
+
(T2 – T1 )
25
0
0
3
(VD =30V, RGK= ∞)
10
)
3
40
2
20
(
2
20
iGF (A)
(Typical)
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
gate trigger
VGT DC
voltage at 25°C
1
0
Gate trigger current
IGT (mA)
IH temperature Characteristics
Full-cycle sinewave
Conduction angle :360°
0
1
Gate current
150
150
RMS on-state current IT(RMS) (A)
Gate trigger voltage VGT (V)
0
100
IT(RMS) – Ta Ratings
IT(RMS) – Tc Ratings
5
0
See graph at the upper right
Number of cycle
6
1
0
1
Full-cycle sinewave
Conduction angle :360°
2
4
2
vT ( V )
IT(RMS) – PT(AV) Characteristics
3
Tj= –20°C
vGF (V)
50Hz
20
Holding current IH (mA)
2.0
On-state voltage
Average on-state power PT(AV) (W)
40
6
0
0.5
1.0
7
60
8
Gate voltage
Surge on-state current ITSM (A)
5
10
10 ms
1cycle
W
=5 z
H
50 10 %
ty
du
10
80
M
On-state current
Tj=125°C
12
PG
f
iT (A)
Tj=25°C
Initial junction temperature
Tj=125°C
ITSM
Tj=25°C
100
50
0
Gate Characteristics
ITSM Ratings
100
Gate trigger voltage VGT (V)
vT – iT Characteristics (max)
75
100
Junction temperature Tj (°C)
125
10
1
0.1
0.1
1
10
10 2
10 3
10 4
10 5
t, Time (ms)
33