TO-220 5A Triac TM541M-L, TM561M-L ■ Features External Dimensions (Unit: mm) ) 12.0 min ●Gate trigger Current: IGT=20mA max (MODE , , 2.1max φ 3.75±0.1 a b ± 1.35 0.15 4.0 max ●RMS on-state current: IT(RMS)=5A 5.0max 10.4max 16.7max 0.2 3.0±0.2 8.8± ●Repetitive peak off-state voltage: VDRM=400, 600V +0.2 0.65 – 0.1 ±0.1 ± 1.7 0.2 ± 2.5 0.1 2.5 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number Weight: Approx. 2.6g ■Absolute Maximum Ratings Parameter Symbol Ratings TM541M-L TM561M-L 400 600 Unit Conditions Repetitive peak off-state voltage VDRM RMS on-state current IT(RMS) 5.0 A V Conduction angle 360°, Tc=111°C Surge on-state current ITSM 50 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C Peak gate voltage VGM 10 V Peak gate current IGM 2 A Peak gate power loss PGM 5 W PG(AV) 0.5 W Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Average gate power loss ■Electrical Characteristics Parameter Symbol Off-state current IDRM On-state voltage VTM (Tj=25°C, unless otherwise specified) Ratings min typ max 0.3 2.0 0.1 1.6 0.7 Gate trigger voltage 0.7 VGT 0.8 Unit Conditions mA VD=VDRM, RGK=∞, Tj=25°C V VD=VDRM, RGK= ∞, Tj=125°C Pulse test, ITM=7A + 2.0 2.0 V VD=6V, RL=10Ω, TC=25°C Gate trigger current 8 IGT 10 Holding current Thermal resistance 32 VGD IH Rth – – – – + + + T2 , G T2 , G T2 , G 20 20 20 mA VD=6V, RL=10Ω, TC=25°C + – – – – + T2 , G T2 , G T2 , G 15 Gate non-trigger voltage + T2 , G 0.8 7 + T2 , G 2.0 V 0.2 mA 5 2.7 °C/W VD=1/2×VDRM, Tj=125°C VD=6V Junction to case TM541M-L, TM561M-L 1 3.0 4.0 5 10 50 4 3 2 1 Ambient temperature Ta (°C) Case temperature TC (°C) 125 100 75 50 25 125 100 75 4 5 0 6 50 1 2 3 4 5 6 – 1.5 1.0 0.5 0.5 1 10 2 10 103 1.5 0.2 0.5 1 10 2 10 Pulse width 0.5 0.5 1 10 5 0.2 0.5 1 10 2 10 103 25 50 75 100 Junction temperature Tj (°C) 125 5 0 25 0.2 0.5 1 50 10 2 10 Tj= –40°C 103 t w (µs) Transient thermal resistance Characteristics (Junction to case) 100 rth (°C/W) (T2–, G– ) (T2+, G– ) (T2+, G+ ) 10 1 – 40 1 0.5 Transient thermal resistance Gate trigger current IGT (mA) 0.2 0 100 MODE MODE MODE 5 Pulse width (VD=6V, RL=10Ω) 50 10 t w (µs) (Typical) 0.4 103 igt Tj= – 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C ) 1 0.5 IGT temperature characteristics 0.6 ( ( Tj= – 40°C tw –20°C 0°C 25°C 50°C 75°C 100°C 125°C Pulse width 0.8 gate trigger IGT DC current at 25°C ) gate trigger IGT DC current at 25°C 103 (T2–,G– ) (T2+,G+ ) (T2+,G– ) 10 2 10 (MODE – ) (Typical) MODE MODE MODE 125 30 VGT temperature characteristics 1.2 100 Pulse width tw (µs) igt t w (µs) (VD=6V, RL=10Ω) 75 igt (Typical) trigger current igt (Gate ) at Tj and tw 1 0.5 50 1.0 trigger current igt (Gate ) at Tj and tw v ) 5 ) ( 10 25 vgt Tj= – 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C (MODE – ) Tj= – 40°C tw –20°C 0°C 25°C 50°C 75°C 100°C 125°C 0 Junction temperature Tj (°C) 30 igt ( i 0 – 40 3.0 Pulse width tw (µs) 30 gate trigger IGT DC current at 25°C 2.5 trigger voltage vgt ( Gate ) at Tj and tw ( trigger voltage vgt ( Gate ) at Tj and tw 103 Tj= – 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C (MODE – ) gt Gate trigger current at Tj and tw 2.0 (MODE – ) ) gate trigger VGT DC voltage at 25°C ) ) ( gate trigger VGT DC voltage at 25°C gt Gate trigger voltage at Tj and tw ( 10 2 Pulse trigger temperature Characteristics 0 – 40 1.5 2.0 vgt Pulse width tw (µs) 1.0 1.0 (MODE – ) 1.0 10 0.5 2.0 Tj= – 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C 0.5 0.5 1 + vgt (Typical) vgt 1.5 – ( T2 – T1 ) RMS on-state current IT(RMS) (A) (MODE – ) 2.0 0 RMS on-state current IT(RMS) (A) Pulse trigger temperature Characteristics + (T2 – T1 ) 25 0 0 3 (VD =30V, RGK= ∞) 10 ) 3 40 2 20 ( 2 20 iGF (A) (Typical) Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind gate trigger VGT DC voltage at 25°C 1 0 Gate trigger current IGT (mA) IH temperature Characteristics Full-cycle sinewave Conduction angle :360° 0 1 Gate current 150 150 RMS on-state current IT(RMS) (A) Gate trigger voltage VGT (V) 0 100 IT(RMS) – Ta Ratings IT(RMS) – Tc Ratings 5 0 See graph at the upper right Number of cycle 6 1 0 1 Full-cycle sinewave Conduction angle :360° 2 4 2 vT ( V ) IT(RMS) – PT(AV) Characteristics 3 Tj= –20°C vGF (V) 50Hz 20 Holding current IH (mA) 2.0 On-state voltage Average on-state power PT(AV) (W) 40 6 0 0.5 1.0 7 60 8 Gate voltage Surge on-state current ITSM (A) 5 10 10 ms 1cycle W =5 z H 50 10 % ty du 10 80 M On-state current Tj=125°C 12 PG f iT (A) Tj=25°C Initial junction temperature Tj=125°C ITSM Tj=25°C 100 50 0 Gate Characteristics ITSM Ratings 100 Gate trigger voltage VGT (V) vT – iT Characteristics (max) 75 100 Junction temperature Tj (°C) 125 10 1 0.1 0.1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 33