TMBYV 10-60 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. MELF (Glass) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit 60 V VRRM Repetitive Peak Reverse Voltage IF (AV) Average Forward Current Ti = 25 °C 1 A IFSM Surge non Repetitive Forward Current Ti = 25 °C tp = 10ms 20 Sinusoidal Pulse A Ti = 25 °C tp = 300µs 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead Temperature for Soldering during 15s - 65 to + 150 - 65 to + 125 °C °C 260 °C Value Unit 110 °C/W THERMAL RESISTANCE Symbol Rth (j - l) Parameter Junction-leads August 1999 Ed: 1A 1/5 TMBYV 10-60 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR* Test Conditions Tj = 25°C Min. Typ. VR = VRRM 0.5 IF = 1A Unit mA 10 Tj = 100°C VF* Max. 0.7 Tj = 25°C IF = 3A V 1 * Pulse test: tp ≤ 300µs δ < 2%. DYNAMIC CHARACTERISTICS Symbol C Test Conditions Typ. Tj = 25°C VR = 0 150 Tj = 25°C VR = 5V 40 Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charge the depletion capacitance of the diode. 2/5 Min. Max. Unit pF This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit behaviour analysis may be performed assuming that Schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). TMBYV 10-60 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus VRRM in per cent. 3/5 TMBYV 10-60 Figure 5. Capacitance C versus reverse applied voltage VR (typical values) Figure 7. Surge non repetitive forward current versus number of cycles. 4/5 Figure 6. Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms. TMBYV 10-60 PACKAGE MECHANICAL DATA MELF Glass DIMENSIONS A REF. Millimeters Min. / B O O /D Max. Min. Typ. Max. A 4.80 5.20 0.189 0.205 ∅B 2.50 2.65 0.098 0.104 C 0.45 0.60 0.018 0.024 ∅D C Typ. Inches 2.50 0.098 C FOOT PRINT DIMENSIONS (Millimeter) 3 4 6.5 Marking: ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5