TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 Low-Noise, Wide-Bandwidth, High PSRR, Low-Dropout 1-A Linear Regulator FEATURES DESCRIPTION • • • The TPS7A8101 low-dropout linear regulator (LDO) offers very good performance in noise and powersupply rejection ratio (PSRR) at the output. This LDO uses an advanced BiCMOS process and a PMOSFET pass device to achieve very low noise, excellent transient response, and excellent PSRR performance. 1 2 • • • • • • • Low-Dropout 1-A Regulator with Enable Adjustable Output Voltage: 0.8 V to 6.0 V Wide-Bandwidth High PSRR: – 80 dB at 1 kHz – 60 dB at 100 kHz – 54 dB at 1 MHz Low Noise: 23.5 μVRMS typical (100 Hz to 100 kHz) Stable with a 4.7-μF Capacitance Excellent Load/Line Transient Response 3% Overall Accuracy (over Load/Line/Temperature) Over-Current and Over-Temperature Protection Very Low Dropout: 170 mV Typical at 1 A Package: 3-mm × 3-mm SON-8 The TPS7A8101 is stable with a 4.7-μF ceramic output capacitor, and uses a precision voltage reference and feedback loop to achieve a worst-case accuracy of 3% over all load, line, process, and temperature variations. This device is fully specified over the temperature range of TJ = –40°C to +125°C and is offered in a 3mm × 3-mm, SON-8 package with a thermal pad. Typical Application Circuit VIN IN CIN APPLICATIONS • • • R1 TPS7A8101 EN GND Telecom Infrastructure Audio High-Speed I/F (PLL/VCO) VOUT OUT FB NR CNR CBYPASS R2 COUT VEN DRB PACKAGE 3mm x 3mm SON (TOP VIEW) TYPICAL POWER-SUPPLY RIPPLE REJECTION 100 1 8 IN OUT 2 7 IN FB/SNS 3 6 NR GND 4 5 EN 90 80 PSRR (dB) OUT 70 60 50 40 IOUT= 10 mA IOUT= 100 mA IOUT= 750 mA IOUT= 1 A 30 20 10 10 100 1k 10k 100k Frequency (Hz) 1M 10M G103 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION (1) PRODUCT TPS7A8101yyyz (1) VOUT YYY is package designator. Z is package quantity. For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the device product folder on www.ti.com. ABSOLUTE MAXIMUM RATINGS Over operating free-air temperature range (unless otherwise noted). (1) VALUE Voltage Current Temperature Electrostatic discharge (ESD) rating (3) (1) (2) (3) 2 MIN MAX UNIT IN –0.3 +7.0 V FB, NR –0.3 +3.6 V EN –0.3 (2) V OUT –0.3 +7.0 V OUT VIN + 0.3 Internally Limited A Operating virtual junction, TJ –55 +150 °C Storage, Tstg –55 +150 °C 2 kV 500 V Human body model (HBM) QSS 009-105 (JESD22-A114A) Charged device model (CDM) QSS 009-147 (JESD22-C101B.01) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolutemaximum-rated conditions for extended periods my affect device reliability. VEN absolute maximum rating is VIN + 0.3 V or +7.0 V, whichever is smaller. ESD testing is performed according to the respective JESD22 JEDEC standard. Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 THERMAL INFORMATION TPS7A8101 THERMAL METRIC (1) (2) DRB (3) UNITS 8 PINS Junction-to-ambient thermal resistance (4) θJA (5) 45.7 θJCtop Junction-to-case (top) thermal resistance θJB Junction-to-board thermal resistance (6) 21.3 ψJT Junction-to-top characterization parameter (7) 0.9 ψJB Junction-to-board characterization parameter (8) 21.4 θJCbot Junction-to-case (bottom) thermal resistance (9) 5.2 (1) (2) (3) (4) (5) (6) (7) (8) (9) 53.2 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A. For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator. Thermal data for the DRB package are derived by thermal simulations based on JEDEC-standard methodology as specified in the JESD51 series. The following assumptions are used in the simulations: (a) The exposed pad is connected to the PCB ground layer through a 2×2 thermal via array. (b) The top and bottom copper layers are assumed to have a 5% thermal conductivity of copper representing a 20% copper coverage. (c) This data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3in × 3in copper area. To understand the effects of the copper area on thermal performance, refer to the Power Dissipation and Estimating Junction Temperature sections. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the top of the package. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 3 TPS7A8101 SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 www.ti.com ELECTRICAL CHARACTERISTICS Over the operating temperature range of TJ = –40°C to +125°C, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 1 mA, VEN = 2.2 V, COUT = 4.7 μF, CNR = 0.01 μF, and CBYPASS = 0 μF, unless otherwise noted. TPS7A8101 is tested at VOUT = 0.8 V and VOUT = 6.0 V. Typical values are at TJ = +25°C. TPS7A8101 PARAMETER VIN Input voltage range (1) VNR Internal reference TEST CONDITIONS Output accuracy (2) V V 0.8 6.0 V VOUT + 0.5 V ≤ VIN ≤ 6.0 V, VIN ≥ 2.5 V, 100 mA ≤ IOUT ≤ 500 mA, 0°C ≤ TJ ≤ 85°C -2.0 +2.0 % VOUT + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.2 V, 100 mA ≤ IOUT ≤ 1 A –3.0 +3.0 % VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.2 V, IOUT = 100 mA ΔVO(ΔIL) Load regulation 100 mA ≤ IOUT ≤ 1 A ILIM Output current limit IGND Ground pin current VOUT + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.5 V, IOUT = 750 mA, VFB = GND or VSNS = GND 350 mV VOUT + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.5 V, IOUT = 1 A, VFB = GND or VSNS = GND 500 mV 1400 2000 mA 60 100 μA 350 μA VOUT = 0.85 × VOUT(NOM), VIN ≥ 3.3 V IOUT = 1 A VIN = 6.5 V, VFB = 0.8 V VIN = 4.3 V, VOUT = 3.3 V, IOUT = 750 mA 1.0 μA dB dB f = 10 kHz 78 dB f = 100 kHz 60 dB f = 1 MHz 54 dB BW = 100 Hz to 100 kHz, VIN = 3.8 V, VOUT = 3.3 V, IOUT = 100 mA, CNR = CBYPASS = 470 nF VEN(LO) Enable low (shutdown) RL = 1 kΩ IEN(HI) Enable pin current, enabled VIN = VEN = 6.5 V tSTR Startup time VOUT(NOM) = 3.3 V, VOUT = 0% to 90% VOUT(NOM), RL = 3.3 kΩ, COUT = 10 μF, CNR = 470 nF Undervoltage lockout VIN rising, RL = 1 kΩ Hysteresis VIN falling, RL = 1 kΩ 4 0.02 82 Enable high (enabled) (3) μA f = 1 kHz VEN(HI) (1) (2) 2 80 Output noise voltage Operating junction temperature 0.20 f = 100 Hz Vn TJ 1100 IOUT = 1 mA Feedback pin current Thermal shutdown temperature μV/mA mV IFB TSD μV/V 150 250 Shutdown current (IGND) UVLO ±0.3 2 ISHDN Power-supply rejection ratio 0.800 VOUT + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.2 V, IOUT = 500 mA, VFB = GND or VSNS = GND VEN ≤ 0.4 V, VIN ≥ 2.2 V, RL = 1 kΩ, 0°C ≤ TJ ≤ 85°C PSRR UNIT 0.810 0.790 Line regulation Dropout voltage (3) MAX 6.5 ΔVO(ΔVI) VDO TYP 2.2 Output voltage range VOUT MIN μVRMS 23.5 2.2 V ≤ VIN ≤ 3.6 V, RL = 1 kΩ 1.2 3.6 V < VIN ≤ 6.5 V, RL = 1 kΩ 1.35 V V 0 0.02 0.4 V 1.0 μA 80 1.86 2 ms 2.10 V 75 mV Shutdown, temperature increasing +160 °C Reset, temperature decreasing +140 –40 °C +125 °C Minimum VIN = VOUT + VDO or 2.2 V, whichever is greater. The TPS7A8101 does not include external resistor tolerances and it is not tested at this condition: VOUT = 0.8 V, 4.5V ≤ VIN ≤ 6.5 V, and 750 mA ≤ IOUT ≤ 1 A because the power dissipation is greater than the maximum rating of the package. VDO is not measured for fixed output voltage devices with VOUT < 1.7 V because minimum VIN = 2.2 V. Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 FUNCTIONAL BLOCK DIAGRAM OUT IN Current Limit EN Thermal Shutdown UVLO 1.20 V Bandgap FB 33 kW Quick-Start NR 33 kW 225 kW 0.8 V 15 pF Adjustable 58.7 kW TPS7A8101 GND Figure 1. Functional Block Diagram PIN CONFIGURATION DRB PACKAGE 3mm x 3mm SON-8 (TOP VIEW) OUT 1 8 IN OUT 2 7 IN FB/SNS 3 6 NR GND 4 5 EN PIN DESCRIPTIONS PIN NAME EN NO. DESCRIPTION 5 Driving this pin high turns on the regulator. Driving this pin low puts the regulator into shutdown mode. Refer to the Shutdown section for more details. EN must not be left floating and can be connected to IN if not used. This pin is the input to the control-loop error amplifier and is used to set the output voltage of the device. FB 3 GND 4, pad IN 7, 8 NR 6 OUT 1, 2 Ground Unregulated input supply Connect an external capacitor between this pin and ground to reduce output noise to very low levels. The capacitor also slows down the VOUT ramp (RC softstart). Regulator output. A 4.7-μF or larger capacitor of any type is required for stability. Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 5 TPS7A8101 SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS: TPS7A8101 At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF, COUT = 4.7 μF, and CNR = 0.01 μF; all temperature values refer to TJ, unless otherwise noted. LOAD REGULATION LOAD REGULATION UNDER LIGHT LOADS 3.399 3.399 +125°C +85°C +25°C 0°C -40°C 3.366 3.333 VOUT (V) VOUT (V) 3.333 +125°C +85°C +25°C 0°C -40°C 3.366 3.3 3.267 3.3 3.267 3.234 3.234 NOTE: Y axis shows 1% VOUT per division NOTE: Y axis shows 1% VOUT per division 3.201 3.201 0 100 200 300 400 500 600 700 800 900 1000 IOUT (mA) 0 5 10 Figure 2. 0.816 VOUT = 0.8V IOUT = 750mA +125°C +85°C +25°C 0°C -40°C 0.816 VOUT = 0.8V IOUT = 5mA +125°C +85°C +25°C 0°C -40°C 0.808 VOUT (V) VOUT (V) 25 LINE REGULATION UNDER LIGHT LOADS 0.824 0.818 0.8 0.792 0.8 0.792 0.784 0.784 NOTE: Y axis shows 1% VOUT per division NOTE: Y axis shows 1% VOUT per division 0.776 0.776 2.2 2.6 3 3.4 3.8 4.2 4.6 VIN (V) Figure 4. 6 20 Figure 3. LINE REGULATION 0.824 15 IOUT (mA) Submit Documentation Feedback 5 5.4 5.8 6.2 6.6 2.2 2.6 3 3.4 3.8 4.2 4.6 VIN (V) 5 5.4 5.8 6.2 6.6 Figure 5. Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 TYPICAL CHARACTERISTICS: TPS7A8101 (continued) At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF, COUT = 4.7 μF, and CNR = 0.01 μF; all temperature values refer to TJ, unless otherwise noted. DROPOUT VOLTAGE vs INPUT VOLTAGE 500 IOUT = 1A 450 +125°C +85°C +25°C 0°C -40°C 400 350 300 250 200 IOUT = 750mA 450 +125°C +85°C +25°C 0°C -40°C 400 350 VDO (V) VDO (V) DROPOUT VOLTAGE vs INPUT VOLTAGE 500 300 250 200 150 150 100 100 50 50 0 0 2 2.5 3 3.5 4 4.5 VIN (V) 5 5.5 6 2 6.5 2.5 3 3.5 Figure 6. +125°C +85°C +25°C 0°C -40°C 400 350 300 250 200 VIN = 3.6V 450 6 6.5 +125°C +85°C +25°C 0°C -40°C 400 350 VDO (V) VDO (V) 5.5 DROPOUT VOLTAGE vs LOAD CURRENT 500 IOUT = 500mA 450 5 Figure 7. DROPOUT VOLTAGE vs INPUT VOLTAGE 500 4 4.5 VIN (V) 300 250 200 150 150 100 100 50 50 0 0 2 2.5 3 3.5 4 4.5 VIN (V) 5 5.5 6 6.5 0 100 200 300 400 500 600 700 800 900 1000 IOUT (mA) Figure 8. Figure 9. DROPOUT VOLTAGE vs TEMPERATURE 500 VIN = 3.6V 450 IOUT = 1000mA IOUT = 750mA IOUT = 5mA 400 VDO (V) 350 300 250 200 150 100 50 0 -40 -25 -10 5 20 35 50 65 Temperature (°C) 80 95 110 125 Figure 10. Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 7 TPS7A8101 SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS: TPS7A8101 (continued) At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF, COUT = 4.7 μF, and CNR = 0.01 μF; all temperature values refer to TJ, unless otherwise noted. GROUND PIN CURRENT vs LOAD CURRENT 300 250 250 200 200 IGND (mA) IGND (mA) GROUND PIN CURRENT vs INPUT VOLTAGE 300 150 +125°C +85°C +25°C 0°C -40°C 100 50 0 VOUT = 0.8V IOUT = 750mA 2.2 2.6 3 150 +125°C +85°C +25°C 0°C -40°C 100 50 0 3.4 3.8 4.2 4.6 VIN (V) 5 5.4 5.8 6.2 0 6.6 100 200 300 400 500 600 700 800 900 1000 IOUT (mA) Figure 11. Figure 12. SHUTDOWN CURRENT vs TEMPERATURE CURRENT LIMIT vs TEMPERATURE 2 1.8 1.6 VIN = 2.2V VIN = 2.5V VIN = 3V VIN = 3.3V VIN = 5V VIN = 5.5V VIN = 6V VIN = 6.6V 1600 1400 1200 1.2 ICL (mA) ISHDN (mA) 1.4 1800 1 0.8 800 600 0.6 VIN = 2.2V VIN = 3.8V VIN = 5.5V VIN = 6.5V 400 0.4 200 0.2 VEN = 0.4V 0 -40 -25 -10 5 20 35 50 65 Temperature (°C) Figure 13. 8 1000 Submit Documentation Feedback 80 95 110 125 0 VOUT = VIN - 0.5V -40 -25 -10 5 20 35 50 65 Temperature (°C) 80 95 110 125 Figure 14. Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 TYPICAL CHARACTERISTICS: TPS7A8101 (continued) POWER-SUPPLY RIPPLE REJECTION vs FREQUENCY POWER-SUPPLY RIPPLE REJECTION vs FREQUENCY 100 100 90 90 80 80 70 70 PSRR (dB) PSRR (dB) At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF, COUT = 4.7 μF, and CNR = 0.01 μF; all temperature values refer to TJ, unless otherwise noted. 60 50 60 50 40 40 30 VIN − VOUT = 1.0 V VIN − VOUT = 0.5 V VIN − VOUT = 0.3 V 20 10 10 100 1k 10k 100k Frequency (Hz) 20 10 10M 10 100 1k G100 VIN − VOUT = 1.0 V CIN = 0 F, COUT = 10 µF CNR = CBYPASS = 470 nF 10k 100k Frequency (Hz) 1M 10M G101 Figure 15. Figure 16. POWER-SUPPLY RIPPLE REJECTION vs FREQUENCY POWER-SUPPLY RIPPLE REJECTION vs FREQUENCY 100 100 VIN − VOUT = 0.5 V CIN = 0 F, COUT = 10 µF CNR = CBYPASS = 470 nF 90 80 90 80 70 70 PSRR (dB) PSRR (dB) 1M IOUT= 10 mA IOUT= 100 mA IOUT= 750 mA IOUT= 1 A 30 IOUT = 100 mA CIN = 0 F, COUT = 10 µF CNR = CBYPASS = 470 nF 60 50 60 50 40 40 IOUT= 10 mA IOUT= 100 mA IOUT= 750 mA IOUT= 1 A 30 20 10 10 100 1k IOUT= 10 mA IOUT= 100 mA IOUT= 750 mA IOUT= 1 A 30 20 10k 100k Frequency (Hz) 1M 10 10M 10 100 1k G102 Figure 17. VIN − VOUT = 1.0 V CIN = 0 F, COUT = 100 µF CNR = CBYPASS = 470 nF 10k 100k Frequency (Hz) 1M 10M G103 Figure 18. POWER-SUPPLY RIPPLE REJECTION vs FREQUENCY 100 90 PSRR (dB) 80 70 60 50 40 IOUT= 10 mA IOUT= 100 mA IOUT= 750 mA IOUT= 1 A 30 20 10 10 100 1k VIN − VOUT = 0.5 V CIN = 0 F, COUT = 100 µF CNR = CBYPASS = 470 nF 10k 100k Frequency (Hz) 1M 10M G104 Figure 19. Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 9 TPS7A8101 SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS: TPS7A8101 (continued) At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF, COUT = 4.7 μF, and CNR = 0.01 μF; all temperature values refer to TJ, unless otherwise noted. POWER-SUPPLY RIPPLE REJECTION vs DROPOUT VOLTAGE 90 90 IOUT = 100mA No CIN 80 70 70 60 60 50 40 f = 1kHz f = 10kHz f = 100kHz f = 1MHz 30 20 f = 1kHz f = 10kHz f = 100kHz f = 1MHz 20 0.5 1 1.5 2 VDO (V) 2.5 3 Output Spectral Noise Density (µV/ Hz) 0.1 CNR = CBYPASS = 100 nF CNR = CBYPASS = 470 nF 100 1k Frequency (Hz) 10k 100k 3 RMS Noise (100 Hz to 100 kHz) 25.89 µVRMS (VOUT = 1.8 V) 23.54 µVRMS (VOUT = 2.5 V) 23.54 µVRMS (VOUT = 3.3 V) VIN − VOUT = 0.5 V CIN = 10 µF, COUT = 10 µF CNR = 470 nF, CBYPASS = 470 nF 10 1 0.1 0.01 VOUT = 1.8 V VOUT = 2.5 V VOUT = 3.3 V 10 100 1k Frequency (Hz) 10k Figure 23. OUTPUT SPECTRAL NOISE DENSITY vs FREQUENCY OUTPUT SPECTRAL NOISE DENSITY vs FREQUENCY 10 1 IOUT = 100 mA IOUT = 750 mA IOUT = 1 A 100 1k Frequency (Hz) Figure 24. Submit Documentation Feedback 10k 100k G202 100k G201 Figure 22. RMS Noise (100 Hz to 100 kHz) 23.54 µVRMS (IOUT = 100 mA) 23.71 µVRMS (IOUT = 750 mA) 22.78 µVRMS (IOUT = 1 A) VIN − VOUT = 0.5 V CIN = 10 µF, COUT = 10 µF CNR = 470 nF, CBYPASS = 470 nF 3.5 100 G200 100 10 2.5 OUTPUT SPECTRAL NOISE DENSITY vs FREQUENCY 1 0.01 1.5 2 VDO (V) OUTPUT SPECTRAL NOISE DENSITY vs FREQUENCY 10 0.1 1 Figure 21. RMS Noise (100 Hz to 100 kHz) 24.09 µVRMS (CNR = CBYPASS = 100 nF) 23.54 µVRMS (CNR = CBYPASS = 470 nF) VIN − VOUT = 0.5 V CIN = 10 µF COUT = 10 µF 10 0.5 Figure 20. 100 0.01 0 3.5 Output Spectral Noise Density (µV/ Hz) Output Spectral Noise Density (µV/ Hz) 40 10 0 Output Spectral Noise Density (µV/ Hz) 50 30 10 10 IOUT = 750mA No CIN 80 PSRR (dB) PSRR (dB) POWER-SUPPLY RIPPLE REJECTION vs DROPOUT VOLTAGE 100 RMS Noise (100 Hz to 100 kHz) 23.54 µVRMS (COUT = 10 µF) 23.91 µVRMS (COUT = 22 µF) 22.78 µVRMS (COUT = 100 µF) VIN − VOUT = 0.5 V CIN = 10 µF, COUT = 10 µF CNR = 470 nF, CBYPASS = 470 nF 10 1 0.1 0.01 COUT = 10 µF COUT = 22 µF COUT = 100 µF 10 100 1k Frequency (Hz) 10k 100k G203 Figure 25. Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 TYPICAL CHARACTERISTICS: TPS7A8101 (continued) At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF, COUT = 4.7 μF, and CNR = 0.01 μF; all temperature values refer to TJ, unless otherwise noted. STARTUP TIME vs NOISE REDUCTION CAPACITANCE LINE TRANSIENT RESPONSE 1000 7 3.333 VIN (V), 0.5V/div 6 100 10 1 3.3165 5.5 3.30825 VIN = 3.8V ® 4.8V ® 3.8V (1V/div) 5 3.29175 4.5 3.2835 4 10 100 CNR = CBYPASS (nF) 3.27525 IOUT = 500mA 3.267 3 50ms/div 1000 G300 Figure 26. Figure 27. LOAD TRANSIENT RESPONSE ENABLE PULSE RESPONSE(1) 4.5 3.85 3.8 3.75 4 VIN (for reference) 3.5 3.7 VOUT 2.5 2 3.3 IOUT = 100mA ® 1A ® 100mA (1A/ms) 1.5 1 3.2 2 1.5 1 0.5 0 0.5 3.15 3.15 OUT 2.5 IOUT (A) 3.25 EN 3 VEN, VOUT (V) 3.35 3.3 3.5 Using same value of CNR and CBYPASS in X axis VIN, VOUT (V) 3.32475 VOUT VOUT (V), 0.25% of 3.3V/div EN↑ to 90%VOUT (ms) 6.5 RLOAD = 33 Ω CIN = 10 µF COUT = 10 µF CNR = 470nF CBYPASS = 470 nF −0.5 0 50ms/div Time (50 ms/div) Figure 28. G005 Figure 29. POWER-UP/POWER-DOWN RESPONSE(1) 7 6 VIN, VOUT (V) 5 VIN = VEN 4 VOUT 3 2 1 0 −1 RLOAD = 33 Ω CIN = 10 µF COUT = 10 µF CNR = 470nF CBYPASS = 470 nF Time (50 ms/div) G006 Figure 30. (1) The internal reference requires approximately 80 ms of rampup time (see STARTUP) from the enable event; therefore, VOUT fully reaches the target output voltage of 3.3 V in 80 ms from starup. Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 11 TPS7A8101 SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 www.ti.com APPLICATION INFORMATION OVERVIEW The TPS7A8101 belongs to a family of new generation LDO regulators that use innovative circuitry to achieve wide bandwidth and high loop gain, resulting in extremely high PSRR (over a 1-MHz range) at very low headroom (VIN – VOUT). A noise reduction capacitor (CNR) at the NR pin and a bypass capacitor (CBYPASS) bypass noise generated by the bandgap reference in order to improve PSRR, while a quick-start circuit fast-charges the noise reduction capacitor. This family of regulators offers sub-bandgap output voltages, current limit, and thermal protection, and is fully specified from –40°C to +125°C. Recommended Component Values Table 1. Recommended Capacitor Values SYMBOL NAME VALUE CIN Input capacitor 10 µF COUT Output capacitor 10 µF CNR Noise reduction capacitor between NR and GND 470 nF CBYPASS Noise reduction capacitor across R1 470 nF Table 2. Recommended Feedback Resistor Values for Common Output Voltages VOUT R1 R2 0.8 V 0 Ω (Short) 10.0 kΩ 1.0 V 2.49 kΩ 10.0 kΩ 1.2 V 4.99 kΩ 10.0 kΩ 1.5 V 8.87 kΩ 10.0 kΩ 1.8 V 12.5 kΩ 10.0 kΩ 2.5 V 21.0 kΩ 10.0 kΩ 3.3 V 30.9 kΩ 10.0 kΩ 5.0 V 52.3 kΩ 10.0 kΩ TYPICAL APPLICATION CONFIGURATION Figure 31 illustrates the connections for the device. VIN IN CIN VOUT OUT R1 TPS7A8101 EN GND FB NR CNR CBYPASS R2 COUT VEN Figure 31. Typical Application Circuit (Adjustable Voltage Version) The voltage on the FB pin sets the output voltage and is determined by the values of R1 and R2. The values of R1 and R2 can be calculated for any voltage using the formula given in Equation 1: (R + R2 ) VOUT = 1 x 0.800 R2 (1) Table 2 shows sample resistor values for common output voltages. In Table 2, E96 series resistors are used, and all values meet 1% of the target VOUT, assuming resistors with zero error. For the actual design, pay attention to any resistor error factors. Using lower values for R1 and R2 reduces the noise injected from the FB pin. 12 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 INPUT AND OUTPUT CAPACITOR REQUIREMENTS Although an input capacitor is not required for stability, it is good analog design practice to connect a 0.1-μF to 1.0-μF low equivalent series resistance (ESR) capacitor across the input supply near the regulator. This capacitor counteracts reactive input sources and improves transient response, noise rejection, and ripple rejection. A higher-value capacitor may be necessary if large, fast rise-time load transients are anticipated or if the device is located several inches from the power source. If source impedance is not sufficiently low, a 0.1-μF input capacitor may be necessary to ensure stability. The TPS7A8101 is designed to be stable with standard ceramic capacitors of capacitance values 4.7 μF or larger. This device is evaluated using a 10-μF ceramic capacitor of 10-V rating, 10% tolerance, X5R type, and 0805 size (2.0 mm x 1.25 mm). X5R- and X7R-type capacitors are highly recommended because they have minimal variation in value and ESR over temperature. Maximum ESR should be less than 1.0 Ω. OUTPUT NOISE In most LDOs, the bandgap is the dominant noise source. If a noise reduction capacitor (CNR) is used with the TPS7A8101, the bandgap does not contribute significantly to noise. Instead, noise is dominated by the output resistor divider and the error amplifier input. If a bypass capacitor (CBYPASS) across the high-side feedback resistor (R1) is used with the TPS7A8101 in addition to CNR, noise from these other sources can also be significantly reduced. To maximize noise performance in a given application, use a 0.47-μF noise-reduction capacitor plus a 0.47-μF bypass capacitor. BOARD LAYOUT RECOMMENDATIONS TO IMPROVE PSRR AND NOISE PERFORMANCE To improve ac performance such as PSRR, output noise, and transient response, it is recommended that the board be designed with separate ground planes for VIN and VOUT, with each ground plane connected only at the GND pin of the device. In addition, the ground connection for the bypass capacitor should connect directly to the GND pin of the device. INTERNAL CURRENT LIMIT The TPS7A8101 internal current limit helps protect the regulator during fault conditions. During current limit, the output sources a fixed amount of current that is largely independent of output voltage. For reliable operation, the device should not be operated in a current limit state for extended periods of time. The PMOS pass element in the TPS7A8101 has a built-in body diode that conducts current when the voltage at OUT exceeds the voltage at IN. This current is not limited, so if extended reverse voltage operation is anticipated, external limiting may be appropriate. SHUTDOWN The enable pin (EN) is active high and is compatible with standard and low voltage, TTL-CMOS levels. When shutdown capability is not required, EN can be connected to IN. DROPOUT VOLTAGE The TPS7A8101 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the PMOS pass device is in its linear region of operation and the input-to-output resistance is the RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the PMOS device in dropout behaves the same way as a resistor. As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout. This effect is shown in Figure 20 and Figure 21 in the Typical Characteristics section. Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 13 TPS7A8101 SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 www.ti.com STARTUP Through a lower resistance, the bandgap reference can quickly charge the noise reduction capacitor (CNR). The TPS7A8101 has a quick-start circuit to quickly charge CNR, if present; see the Functional Block Diagrams. At startup, this quick-start switch is closed, with only 33 kΩ of resistance between the bandgap reference and the NR pin. The quick-start switch opens approximately 100 ms after any device enabling event, and the resistance between the bandgap reference and the NR pin becomes higher in value (approximately 250 kΩ) to form a very good low-pass (RC) filter. This low-pass filter achieves very good noise reduction for the reference voltage. Inrush current can be a problem in many applications. The 33-kΩ resistance during the startup period is intentionally put there to slow down the reference voltage ramp up, thus reducing the inrush current. For example, the capacitance of connecting the recommended CNR value of 0.47 μF along with the 33-kΩ resistance causes approximately 80-ms RC delay. Startup time with the other CNR values can be calculated as: tSTR (s) = 170,000 x CNR (F) (2) Although the noise reduction effect is nearly saturated at 0.47 μF, connecting a CNR value greater than 0.47 μF can help reduce noise slightly more; however, startup time will be extremely long because the quick-start switch opens after approximately 100 ms. That is, if CNR is not fully charged during this 100-ms period, CNR finishes charging through a higher resistance of 250 kΩ, and takes much longer to fully charge. Note that a low leakage CNR should be used; most ceramic capacitors are suitable. TRANSIENT RESPONSE As with any regulator, increasing the size of the output capacitor reduces over/undershoot magnitude but increases duration of the transient response. Line transient performance can be improved by using a larger noise reduction capacitor (CNR) and/or bypass capacitor (CBYPASS). UNDERVOLTAGE LOCK-OUT (UVLO) The TPS7A8101 uses an undervoltage lock-out circuit to keep the output shut off until the internal circuitry is operating properly. The UVLO circuit has a de-glitch feature so that it typically ignores undershoot transients on the input if they are less than 50-μs duration. MINIMUM LOAD The TPS7A8101 is stable and well-behaved with no output load. Traditional PMOS LDO regulators suffer from lower loop gain at very light output loads. The TPS7A8101 employs an innovative low-current mode circuit to increase loop gain under very light or no-load conditions, resulting in improved output voltage regulation performance down to zero output current. THERMAL INFORMATION Thermal Protection Thermal protection disables the output when the junction temperature rises to approximately +160°C, allowing the device to cool. When the junction temperature cools to approximately +140°C the output circuitry is again enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage because of overheating. Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate heatsink. For reliable operation, junction temperature should be limited to +125°C maximum. To estimate the margin of safety in a complete design (including heatsink), increase the ambient temperature until the thermal protection is triggered; use worst-case loads and signal conditions. For good reliability, thermal protection should trigger at least +35°C above the maximum expected ambient condition of your particular application. This configuration produces a worst-case junction temperature of +125°C at the highest expected ambient temperature and worst-case load. The internal protection circuitry of the TPS7A8101 has been designed to protect against overload conditions. It was not intended to replace proper heatsinking. Continuously running the TPS7A8101 into thermal shutdown degrades device reliability. 14 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 Power Dissipation Knowing the device power dissipation and proper sizing of the thermal plane that is connected to the tab or pad is critical to avoiding thermal shutdown and ensuring reliable operation. Power dissipation of the device depends on input voltage and load conditions and can be calculated using Equation 3: P D + ǒVIN * VOUTǓ I OUT (3) Power dissipation can be minimized and greater efficiency can be achieved by using the lowest possible input voltage necessary to achieve the required output voltage regulation. On the SON (DRB) package, the primary conduction path for heat is through the exposed pad to the printed circuit board (PCB). The pad can be connected to ground or be left floating; however, it should be attached to an appropriate amount of copper PCB area to ensure the device does not overheat. The maximum junction-toambient thermal resistance depends on the maximum ambient temperature, maximum device junction temperature, and power dissipation of the device and can be calculated using Equation 4: (+125°C - TA) RqJA = PD (4) Knowing the maximum RθJA, the minimum amount of PCB copper area needed for appropriate heatsinking can be estimated using Figure 32. 160 140 qJA (°C/W) 120 100 80 60 40 20 0 0 Note: 1 2 4 5 7 3 6 Board Copper Area (in2) 8 9 10 θJA value at board size of 9 in2 (that is, 3 in × 3 in) is a JEDEC standard. Figure 32. θJA vs Board Size Figure 32 shows the variation of θJA as a function of ground plane copper area in the board. It is intended only as a guideline to demonstrate the effects of heat spreading in the ground plane and should not be used to estimate actual thermal performance in real application environments. NOTE: When the device is mounted on an application PCB, it is strongly recommended to use ΨJT and ΨJB, as explained in the Estimating Junction Temperature section. Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 15 TPS7A8101 SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 www.ti.com Estimating Junction Temperature Using the thermal metrics ΨJT and ΨJB, as shown in the Thermal Information table, the junction temperature can be estimated with corresponding formulas (given in Equation 5). For backwards compatibility, an older θJC,Top parameter is listed as well. YJT: TJ = TT + YJT · PD YJB: TJ = TB + YJB · PD (5) Where PD is the power dissipation shown by Equation 4, TT is the temperature at the center-top of the IC package, and TB is the PCB temperature measured 1 mm away from the IC package on the PCB surface (as Figure 33 shows). TT on top of IC surface TB TB on PCB TT 1mm 1mm Figure 33. Measuring Points for TT and TB NOTE: Both TT and TB can be measured on actual application boards using an infrared thermometer. For more information about measuring TT and TB, see the application note SBVA025, Using New Thermal Metrics, available for download at www.ti.com. By looking at Figure 34, the new thermal metrics (ΨJT and ΨJB) have very little dependency on board size. That is, using ΨJT or ΨJB with Equation 5 is a good way to estimate TJ by simply measuring TT or TB, regardless of the application board size. 20 18 YJB YJT and YJB (°C/W) 16 14 12 10 8 6 YJT 4 2 0 0 1 2 3 4 5 6 7 8 9 10 Board Copper Area (in2) Figure 34. ΨJT and ΨJB vs Board Size For a more detailed discussion of why TI does not recommend using θJC(top) to determine thermal characteristics, refer to application report SBVA025, Using New Thermal Metrics, available for download at www.ti.com. For further information, refer to application report SPRA953, IC Package Thermal Metrics, also available on the TI website. 16 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated TPS7A8101 www.ti.com SBVS179A – DECEMBER 2011 – REVISED APRIL 2012 REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (December 2011) to Revision A • Page Added new footnote 2 to Thermal Information table, changed footnote 3 ........................................................................... 3 Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 17 PACKAGE OPTION ADDENDUM www.ti.com 14-Apr-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) TPS7A8101DRBR ACTIVE SON DRB 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS7A8101DRBT ACTIVE SON DRB 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Samples (Requires Login) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPS7A8101DRBR SON DRB 8 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 TPS7A8101DRBT SON DRB 8 250 180.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS7A8101DRBR SON DRB 8 3000 367.0 367.0 35.0 TPS7A8101DRBT SON DRB 8 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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