TPS749xx www.ti.com SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 3.0A Low Dropout Linear Regulator with Programmable Soft-Start Check for Samples: TPS749xx FEATURES 1 • • • • • 2 • • • • • • • VOUT Range: 0.8V to 3.6V Ultralow VIN Range: 0.8V to 5.5V VBIAS Range: 2.7V to 5.5V Low Dropout: 120mV (typ) at 3.0A, VBIAS = 5V Power-Good (PG) Output Allows Supply Monitoring or Provides a Sequencing Signal for Other Supplies 2% Accuracy Over Line/Load/Temperature Programmable Soft-Start Provides Linear Voltage Startup VBIAS Permits Low VIN Operation with Good Transient Response Stable with Any Output Capacitor ≥ 2.2mF Available in 5mm × 5mm × 1mm QFN and DDPAK-7 Packages Open-Drain Power-Good Active High Enable DESCRIPTION The TPS749xx low-dropout (LDO) linear regulator provides an easy-to-use robust power management solution for a wide variety of applications. User-programmable soft-start minimizes stress on the input power source by reducing capacitive inrush current on start-up. The soft-start is monotonic and well-suited for powering many different types of processors and ASICs. The enable input and power-good output allow easy sequencing with external regulators. This complete flexibility permits the user to configure a solution that meets the sequencing requirements of FPGAs, DSPs, and other applications with special start-up requirements. A precision reference and error amplifier deliver 2% accuracy over load, line, temperature, and process. The device is stable with any type of capacitor ≥ 2.2mF, and the device is fully specified from –40°C to +125°C. The TPS749xx is offered in a small (5mm × 5mm) QFN package, yielding a highly compact total solution size. It is also available in a DDPAK-7. APPLICATIONS blank • • • • blank • FPGA Applications DSP Core and I/O Voltages Post-Regulation Applications Applications with Special Start-Up Time or Sequencing Requirements Hot-Swap and Inrush Controls blank blank blank blank CSS = 0mF VIN IN CIN R3 BIAS EN VBIAS TPS74901 CSS = 0.0047mF 1V/div R1 GND CSS VOUT VOUT OUT SS CBIAS CSS = 0.001mF PG COUT FB 1.2V R2 1V/div VEN 0V Figure 1. Typical Application Circuit (Adjustable) Time (1ms/div) Figure 2. Turn-On Response 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION (1) PRODUCT TPS749xx yyy z (1) (2) (3) VOUT (2) XX is nominal output voltage (for example, 12 = 1.2V, 15 = 1.5V, 01 = Adjustable). (3) YYY is package designator. Z is package quantity. For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. Fixed output voltages from 0.8V to 3.3V are available; minimum order quantities may apply. Contact factory for details and availability. For fixed 0.8V operation, tie FB to OUT. ABSOLUTE MAXIMUM RATINGS (1) At TJ = –40°C to +125°C, unless otherwise noted. All voltages are with respect to GND. TPS749xx UNIT VIN, VBIAS Input voltage range PARAMETER –0.3 to +6 V VEN Enable voltage range –0.3 to +6 V VPG Power-good voltage range –0.3 to +6 V IPG PG sink current 0 to +1.5 mA VSS SS pin voltage range –0.3 to +6 V VFB Feedback pin voltage range –0.3 to +6 V VOUT Output voltage range –0.3 to VIN + 0.3 V IOUT Maximum output current Internally limited Output short-circuit duration Indefinite PDISS Continuous total power dissipation TJ Operating junction temperature range –40 to +125 °C TSTG Storage junction temperature range –55 to +150 °C (1) 2 See Thermal Information Table Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx www.ti.com SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 THERMAL INFORMATION TPS74901 (2) THERMAL METRIC (1) RGW (20 PINS) KTW (7 PINS) qJA Junction-to-ambient thermal resistance (3) 30.5 20.1 qJCtop Junction-to-case (top) thermal resistance (4) 27.6 2.1 (5) qJB Junction-to-board thermal resistance yJT Junction-to-top characterization parameter (6) yJB Junction-to-board characterization parameter (7) qJCbot (1) (2) (3) (4) (5) (6) (7) (8) Junction-to-case (bottom) thermal resistance (8) N/A N/A 0.37 4.2 10.6 6.1 4.1 1.4 UNITS °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A. Thermal data for the RGW and KTW packages are derived by thermal simulations based on JEDEC-standard methodology as specified in the JESD51 series. The following assumptions are used in the simulations: (a) i. RGW: The exposed pad is connected to the PCB ground layer through a 4x4 thermal via array. - ii. KTW: The exposed pad is connected to the PCB ground layer through a 6x6 thermal via array. (b) Each of top and bottom copper layers has a dedicated pattern for 20% copper coverage. (c) These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3in × 3in copper area. To understand the effects of the copper area on thermal performance, refer to the Power Dissipation and Estimating Junction Temperature sections. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the top of the package. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. The junction-to-top characterization parameter, yJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data to obtain qJA using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-board characterization parameter, yJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data to obtain qJA using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Copyright © 2007–2010, Texas Instruments Incorporated Submit Documentation Feedback 3 TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 www.ti.com ELECTRICAL CHARACTERISTICS At TJ = –40°C to +125°C, VEN = 1.1V, VIN = VOUT + 0.3V, CBIAS = 0.1mF, CIN = COUT = 10mF, CNR = 1nF, IOUT = 50mA, and VBIAS = 5.0V, unless otherwise noted. Typical values are at TJ = +25°C. TPS74901 PARAMETER TEST CONDITIONS VIN Input voltage range 2.7 VREF Internal reference (Adj.) TJ = +25°C 0.798 VIN = 5V, IOUT = 3.0V VREF Accuracy (RGW package) (1) VOUT + 2.2V ≤ VBIAS ≤ 5.5V, 50mA ≤ IOUT ≤ 3.0A –2 Accuracy (KTW package) (1) VOUT + 2.4V ≤ VBIAS ≤ 5.5V, 50mA ≤ IOUT ≤ 3.0A –2 Output voltage range VOUT/VIN Line regulation VOUT VOUT/IOUT Load regulation VDO VIN dropout voltage (2) VBIAS dropout voltage (2) ICL Current limit + 0.3 ≤ VIN ≤ 5.5V Shutdown supply current (IGND) PSRR Power-supply rejection (VBIAS to VOUT) Noise Output noise voltage tSTR Minimum startup time ISS Soft-start charging current (1) (2) (3) 4 LO PG output low voltage PG leakage current TJ Operating junction temperature TSD Thermal shutdown temperature V ±0.5 2 % ±0.5 2 % 120 280 mV IOUT = 3.0A, VIN = VBIAS 1.31 1.75 V VOUT = 80% × VOUT (NOM), RGW Package 3.9 4.6 5.5 VOUT = 80% × VOUT (NOM), KTW Package 3.8 4.6 5.5 1 2 mA 1 50 mA 0.150 1 mA A VEN ≤ 0.4V –1 1kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 60 300kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 30 1kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 50 300kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 30 100Hz to 100kHz, IOUT = 3.0A, CSS = 0.001mF 25 × VOUT RLOAD for IOUT = 1.0A, CSS = open 200 ms VSS = 0.4V 440 nA dB dB mVRMS 1.1 5.5 0 0.4 50 VOUT decreasing 85 V ms 0.1 1 mA 90 94 %VOUT 3 IPG = 1mA (sinking), VOUT < VIT VPG = 5.25V, VOUT > VIT V mV 20 VEN = 5V VHYS PG trip hysteresis LKG V 3.6 %/A VEN, DG Enable pin deglitch time VPG, V IOUT = 3.0A, VBIAS – VOUT (NOM) ≥ 3.25V (3) VEN, HYS Enable pin hysteresis IPG, 5.5 0.806 0.802 %/V VEN, HI Enable input high level VIT PG trip threshold V 0.09 VEN, LO Enable input low level IEN Enable pin current UNIT 5.5 0.03 (NOM) IFB Feedback pin current Power-supply rejection (VIN to VOUT) MAX 50mA ≤ IOUT ≤ 3.0A IBIAS Bias pin current ISHDN TYP VOUT + VDO VBIAS Bias pin voltage range VOUT MIN 0.1 –40 Shutdown, temperature increasing +165 Reset, temperature decreasing +140 %VOUT 0.3 V 1 mA +125 °C °C Adjustable devices tested at 0.8V; resistor tolerance is not taken into account. Dropout is defined as the voltage from VIN to VOUT when VOUT is 3% below nominal. 3.25V is a test condition of this device and can be adjusted by referring to Figure 8 . Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx www.ti.com SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 BLOCK DIAGRAM IN Current Limit BIAS UVLO OUT Thermal Limit 0.44mA VOUT R1 SS CSS Soft-Start Discharge 0.8V Reference FB PG EN Hysteresis and Deglitch R2 0.9 ´ VREF GND Table 1. Standard 1% Resistor Values for Programming the Output Voltage (1) (1) R1 (kΩ) R2 (kΩ) VOUT (V) Short Open 0.8 0.619 4.99 0.9 1.13 4.53 1.0 1.37 4.42 1.05 1.87 4.99 1.1 2.49 4.99 1.2 4.12 4.75 1.5 3.57 2.87 1.8 3.57 1.69 2.5 3.57 1.15 3.3 VOUT = 0.8 × (1 + R1/R2) Table 2. Standard Capacitor Values for Programming the Soft-Start Time (1) tSS(s) = (1) CSS SOFT-START TIME Open 0.1ms 270pF 0.5ms 560pF 1ms 2.7nF 5ms 5.6nF 10ms 0.01mF 18ms VREF × CSS 0.8V × CSS(F) = 0.44mA where tSS(s) = soft-start time in seconds. ISS Copyright © 2007–2010, Texas Instruments Incorporated Submit Documentation Feedback 5 TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 www.ti.com PIN ASSIGNMENTS RGW PACKAGE QFN-20 (TOP VIEW) IN NC NC NC OUT 5 4 3 2 1 KTW PACKAGE DDPAK-7 (TOP VIEW) IN 6 20 OUT IN 7 19 OUT IN 8 18 OUT PG 9 17 NC BIAS 10 16 FB 12 13 14 15 GND NC NC SS SS FB OUT GND IN BIAS EN 11 EN 1 2 3 4 5 6 7 PIN DESCRIPTIONS NAME KTW (DDPAK) RGW (QFN) IN 5 5–8 Unregulated input to the device. EN 7 11 Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode. This pin must not be left floating. SS 1 15 Soft-Start pin. A capacitor connected on this pin to ground sets the start-up time. If this pin is left floating, the regulator output soft-start ramp time is typically 100ms. BIAS 6 10 Bias input voltage for error amplifier, reference, and internal control circuits. PG N/A 9 Power-Good (PG) is an open-drain, active-high output that indicates the status of VOUT. When VOUT exceeds the PG trip threshold, the PG pin goes into a high-impedance state. When VOUT is below this threshold the pin is driven to a low-impedance state. A pull-up resistor from 10kΩ to 1MΩ should be connected from this pin to a supply up to 5.5V. The supply can be higher than the input voltage. Alternatively, the PG pin can be left floating if output monitoring is not necessary. FB 2 16 This pin is the feedback connection to the center tap of an external resistor divider network that sets the output voltage. This pin must not be left floating. OUT 3 1, 18–20 NC N/A 2–4, 13, 14, 17 GND 4 12 PAD/TAB 6 DESCRIPTION Submit Documentation Feedback Regulated output voltage. A small capacitor (total typical capacitance ≥ 2.2mF, ceramic) is needed from this pin to ground to assure stability. No connection. This pin can be left floating or connected to GND to allow better thermal contact to the top-side plane. Ground Should be soldered to the ground plane for increased thermal performance. Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx www.ti.com SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 TYPICAL CHARACTERISTICS At TJ = +25°C, VIN = VOUT(TYP) + 0.3V, VBIAS = 5V, IOUT = 50mA, VEN = VIN, CIN = 1mF, CBIAS = 4.7mF, and COUT = 10mF, unless otherwise noted. VIN LINE REGULATION VBIAS LINE REGULATION 0.20 0.5 0.15 0.4 Change in VOUT (%) Change in VOUT (%) 0.3 0.10 -40°C 0.05 0 +25°C +125°C -0.05 0.2 -40°C 0.1 0 -0.1 +125°C +25°C -0.2 -0.01 -0.3 -0.15 -0.4 -0.20 -0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.5 5.0 1.0 1.5 2.0 2.5 3.0 VIN - VOUT (V) VBIAS - VOUT (V) Figure 3. Figure 4. LOAD REGULATION 3.5 4.0 LOAD REGULATION 1.0 0.5 0.4 -40°C 03 Change in VOUT (%) Change in VOUT (%) 0.8 0.6 -40°C 0.4 +125°C +25°C 0.2 +25°C 0.2 0.1 0 -0.1 -0.2 +125°C -0.3 0 -0.4 -0.2 -0.5 10 20 30 40 0 50 0.5 1.0 1.5 2.0 2.5 3.0 IOUT (mA) IOUT (A) Figure 5. Figure 6. VIN DROPOUT VOLTAGE vs iOUT AND TEMPERATURE (TJ) VIN DROPOUT VOLTAGE vs VIN DROPOUT VOLTAGE vs IOUT AND TEMPERATURE (TJ) 180 400 160 350 IOUT = 3A 140 VDO (VIN - VOUT) (mV) VDO (VIN - VOUT) (mV) 0 120 100 +125°C 80 60 +25°C 40 300 250 +125°C 200 150 100 +25°C -40°C 50 20 -40°C 0 0 0 0.5 1.0 1.5 2.0 IOUT (A) Figure 7. Copyright © 2007–2010, Texas Instruments Incorporated 2.5 3.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VBIAS - VOUT (V) Figure 8. Submit Documentation Feedback 7 TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) At TJ = +25°C, VIN = VOUT(TYP) + 0.3V, VBIAS = 5V, IOUT = 50mA, VEN = VIN, CIN = 1mF, CBIAS = 4.7mF, and COUT = 10mF, unless otherwise noted. VIN DROPOUT VOLTAGE vs (VBIAS – VOUT) AND TEMPERATURE (TJ) VBIAS DROPOUT VOLTAGE vs IOUT AND TEMPERATURE (TJ) 2200 200 IOUT = 0.5A 180 2000 VDO (VBIAS - VOUT) (mV) VDO (VIN - VOUT) (mV) 160 140 120 100 +25°C 80 +125°C 60 40 -40°C 1800 1600 +125°C 1400 1200 +25°C 1000 -40°C 800 20 600 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 0.5 1.0 VBIAS - VOUT (V) Figure 9. VBIAS PSRR vs FREQUENCY 3.0 VIN PSRR vs FREQUENCY 80 IOUT = 0.1A IOUT = 1.5A 70 60 50 40 IOUT = 0.5A 30 VIN = 1.8V VOUT = 1.2V VBIAS = 5V CSS = 1nF 20 10 Power-Supply Rejection Ratio (dB) Power-Supply Rejection Ratio (dB) 2.5 90 80 70 IOUT = 100mA 60 IOUT = 500mA 50 40 30 20 VIN = 1.8V VOUT = 1.2V CSS = 1nF 10 IOUT = 1500mA IOUT = 300mA 0 0 10 100 1k 10k 100k 1M 10 10M 100 1k Frequency (Hz) 1kHz 60 10kHz 50 40 500kHz 30 100kHz 20 10 0 0 0.25 0.50 0.75 1.00 1.25 VIN - VOUT (V) Figure 13. Submit Documentation Feedback 1.50 1.75 2.00 2.25 Output Spectral Noise Density (mV/ÖHz) 70 1M 10M NOISE SPECTRAL DENSITY VOUT = 1.2V IOUT = 1.5A CSS = 1nF 80 100k Figure 12. VIN PSRR vs (VIN – VOUT) 90 10k Frequency (Hz) Figure 11. Power-Supply Rejection Ratio (dB) 2.0 Figure 10. 90 8 1.5 IOUT (A) 1 IOUT = 100mA VOUT = 1.2V CSS = 0nF 0.1 CSS = 10nF CSS = 1nF 0.01 100 1k 10k 100k Frequency (Hz) Figure 14. Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx www.ti.com SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 TYPICAL CHARACTERISTICS (continued) At TJ = +25°C, VIN = VOUT(TYP) + 0.3V, VBIAS = 5V, IOUT = 50mA, VEN = VIN, CIN = 1mF, CBIAS = 4.7mF, and COUT = 10mF, unless otherwise noted. BIAS PIN CURRENT vs IOUT AND TEMPERATURE (TJ) BIAS PIN CURRENT vs VBIAS AND TEMPERATURE (TJ) 2.0 2.0 1.8 1.8 +125°C +125°C 1.6 1.6 1.4 IBIAS (mA) IBIAS (mA) 1.4 1.2 1.0 0.8 -40°C 0.6 1.2 +25°C 1.0 0.8 0.6 +25°C -40°C 0.4 0.4 0.2 0.2 0 0 0 0.5 1.0 1.5 2.0 2.5 2.0 3.0 2.5 3.0 3.5 IOUT (A) 4.5 5.0 5.5 VBIAS (V) Figure 15. Figure 16. SOFT-START CHARGING CURRENT (ISS) vs TEMPERATURE (TJ) LOW-LEVEL PG VOLTAGE vs CURRENT 1.0 500 0.9 VOL Low-Level PG Voltage (V) 475 450 425 ISS (nA) 4.0 400 375 350 325 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 300 -50 -25 0 25 50 75 100 125 0 2 4 Junction Temperature (°C) 6 8 10 12 PG Current (mA) Figure 17. Figure 18. CURRENT LIMIT vs (VBIAS – VOUT) 5.0 -40°C 4.5 Current Limit (A) 4.0 +125°C 3.5 3.0 +25°C 2.5 Drive capability of output FET limits IOUT when VBIAS - VOUT is under 2.0V. 2.0 1.5 VOUT = 0.8V 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VBIAS - VOUT (V) Figure 19. Copyright © 2007–2010, Texas Instruments Incorporated Submit Documentation Feedback 9 TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 www.ti.com TYPICAL CHARACTERISTICS At TJ = +25°C, VIN = VOUT(TYP) + 0.3V, VBIAS = 5V, IOUT = 1A, VEN = VIN = 1.8V, VOUT = 1.5V, CIN = 1mF, CBIAS = 4.7mF, and COUT = 10mF, unless otherwise noted. VBIAS LINE TRANSIENT VIN LINE TRANSIENT CSS = 1nF COUT = 10mF (Ceramic) COUT = 10mF (Ceramic) 100mV/div 100mV/div COUT = 2.2mF (Ceramic) 100mV/div CSS = 1nF 3.8V 5.0V 1V/div 1V/div 1V/ms 3.3V 1V/ms 1.8V Time (50ms/div) Time (50ms/div) Figure 20. Figure 21. OUTPUT LOAD TRANSIENT RESPONSE TURN-ON RESPONSE COUT = 470mF (OSCON) CSS = 0nF 100mV/div COUT = 100mF (Ceramic) CSS = 1nF 0.5V/div 100mV/div VOUT CSS = 2.2nF COUT = 22mF (Ceramic) 100mV/div 1.2V VEN 3A CSS = 1nF 2A/div 1V/div 0V 1A/ms 50mA Time (50ms/div) Time (1ms/div) Figure 22. Figure 23. POWER-UP/POWER-DOWN VIN = VBIAS = VEN 1V/div VPG (500mV/div) VOUT Time (20ms/div) Figure 24. 10 Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx www.ti.com SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 APPLICATION INFORMATION The TPS749xx belongs to a family of low dropout regulators that feature soft-start capabilities. These regulators use a low current bias input to power all internal control circuitry, allowing the NMOS pass transistor to regulate very low input and output voltages. The use of an NMOS-pass FET offers several critical advantages for many applications. Unlike a PMOS topology device, the output capacitor has little effect on loop stability. This architecture allows the TPS749xx to be stable with any capacitor type of value 2.2mF or greater. Transient response is also superior to PMOS topologies, particularly for low VIN applications. The TPS749xx features a programmable voltage-controlled soft-start circuit that provides a smooth, monotonic start-up and limits startup inrush currents that may be caused by large capacitive loads. A power-good (PG) output is available to allow supply monitoring and sequencing of other supplies. An enable (EN) pin with hysteresis and deglitch allows slow-ramping signals to be used for sequencing the device. The low VIN and VOUT capability allows for inexpensive, easy-to-design, and efficient linear regulation between the multiple supply voltages often present in processor intensive systems. Figure 25 illustrates the typical application circuit for the TPS749xx adjustable output device. R1 and R2 can be calculated for any output voltage using the formula shown in Figure 25. Refer to Table 1 for sample resistor values of common output voltages. In order to achieve the maximum accuracy specifications, R2 should be ≤ 4.99kΩ. VIN IN CIN 1mF PG R3 BIAS EN VBIAS TPS74901 R1 SS CBIAS 1mF VOUT OUT FB GND CSS COUT 10mF INPUT, OUTPUT, AND BIAS CAPACITOR REQUIREMENTS The device is designed to be stable for all available types of and values of output capacitors ≥ 2.2mF. The device is also stable with multiple capacitors in parallel, which can be of any type or value. The capacitance required on the IN and BIAS pin strongly depends on the input supply source impedance. To counteract any inductance in the input, the minimum recommended capacitor for VIN and VBIAS is 1mF. If VIN and VBIAS are connected to the same supply, the recommended minimum capacitor for VBIAS is 4.7mF. Good quality, low ESR capacitors should be used on the input; ceramic X5R and X7R capacitors are preferred. These capacitors should be placed as close the pins as possible for optimum performance. TRANSIENT RESPONSE The TPS749xx is designed to have excellent transient response for most applications with a small amount of output capacitance. In some cases, the transient response may be limited by the transient response of the input supply. This limitation is especially true in applications where the difference between the input and output is less than 300mV. In this case, adding additional input capacitance improves the transient response much more than just adding additional output capacitance would do. With a solid input supply, adding additional output capacitance reduces undershoot and overshoot during a transient event; refer to Figure 22 in the Typical Characteristics section. Because the TPS749xx is stable with output capacitors as low as 2.2mF, many applications may need very little capacitance at the LDO output. For these applications, local bypass capacitance for the powered device may be sufficient to meet the transient requirements of the application. This design reduces the total solution cost by avoiding the need to use expensive high-value capacitors at the LDO output. R2 ( VOUT = 0.8 ´ 1 + R1 R2 ) Figure 25. Typical Application Circuit for the TPS749xx (Adjustable) Copyright © 2007–2010, Texas Instruments Incorporated Submit Documentation Feedback 11 TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 www.ti.com DROPOUT VOLTAGE VIN The TPS749xx offers very low dropout performance, making it well-suited for high-current low VIN/low VOUT applications. The low dropout of the TPS749xx allows the device to be used in place of a DC/DC converter and still achieve good efficiencies. This provides designers with the power architecture for their applications to achieve the smallest, simplest, and lowest cost solution. There are two different specifications for dropout voltage with the TPS749xx. The first specification (see Figure 26) is referred to as VIN Dropout and is used when an external bias voltage is applied to achieve low dropout. This specification assumes that VBIAS is at least 3.25V (1) above VOUT, which is the case for VBIAS when powered by a 5.0V rail with 5% tolerance and with VOUT = 1.5V. If VBIAS is higher than VOUT + 3.25V, VIN dropout is less than specified (1). BIAS IN Reference VBIAS = 5V ±5% VIN = 1.8V VOUT = 1.5V IOUT = 1.5A Efficiency = 83% OUT VOUT COUT FB Simplified Block Diagram Figure 26. Typical Application of the TPS749xx Using an Auxiliary Bias Rail The second specification (shown in Figure 27) is referred to as VBIAS Dropout and applied to applications where IN and BIAS are tied together. This option allows the device to be used in applications where an auxiliary bias voltage is not available or low dropout is not required. Dropout is limited by BIAS in these applications because VBIAS provides the gate drive to the pass FET; therefore, VBIAS must be 1.75V above VOUT. Dropout is limited by BIAS in these applications because VBIAS provides the gate drive to the pass FET; therefore, VBIAS must be 1.75V above VOUT. Because of this usage, IN and BIAS tied together easily consume huge power. Pay attention not to exceed the power rating of the IC package. BIAS Reference IN VBIAS = 3.3V ±5% VIN = 3.3V ± 5V VOUT = 1.5V IOUT = 1.5A Efficiency = 45% OUT VOUT COUT FB Simplified Block Diagram Figure 27. Typical Application of the TPS749xx Without an Auxiliary Bias PROGRAMMABLE SOFT-START The TPS749xx features a programmable, monotonic, voltage-controlled soft-start that is set with an external capacitor (CSS). This feature is important for many applications because it eliminates power-up initialization problems when powering FPGAs, DSPs, or other processors. The controlled voltage ramp of the output also reduces peak inrush current during start-up, minimizing start-up transient events to the input power bus. To achieve a linear and monotonic soft-start, the TPS749xx error amplifier tracks the voltage ramp of the external soft-start capacitor until the voltage exceeds the internal reference. The soft-start ramp time is dependent on the soft-start charging current (ISS), soft-start capacitance (CSS), and the internal reference voltage (VREF), and can be calculated using Equation 1: tSS = (VREF x CSS) ISS (1) If large output capacitors are used, the device current limit (ICL) and the output capacitor may set the start-up time. In this case, the start-up time is given by Equation 2: tSSCL = (VOUT(NOM) x COUT) ICL(MIN) (2) where: VOUT(NOM) is the nominal set output voltage, COUT is the output capacitance, and ICL(MIN) is the minimum current limit for the device. In applications where monotonic startup is required, the soft-start time given by Equation 1 should be set to be greater than Equation 2. (1) 12 3.25V is a test condition of this device and can be adjusted by referring to Figure 8 . Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx www.ti.com SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 The maximum recommended soft-start capacitor is 0.015mF. Larger soft-start capacitors can be used and will not damage the device; however, the soft-start capacitor discharge circuit may not be able to fully discharge the soft-start capacitor when enabled. Soft-start capacitors larger than 0.015mF could be a problem in applications where the user needs to rapidly pulse the enable pin and still requires the device to soft-start from ground. CSS must be low-leakage; X7R, X5R, or C0G dielectric materials are preferred. Refer to Table 2 for suggested soft-start capacitor values. SEQUENCING REQUIREMENTS VIN, VBIAS, and VEN can be sequenced in any order without causing damage to the device. However, for the soft-start function to work as intended, certain sequencing rules must be applied. Connecting EN to IN is acceptable for most applications as long as VIN is greater than 1.1V and the ramp rate of VIN and VBIAS is faster than the set soft-start ramp rate. If the ramp rate of the input sources is slower than the set soft-start time, the output tracks the slower supply minus the dropout voltage until it reaches the set output voltage. If EN is connected to BIAS, the device will soft-start as programmed, provided that VIN is present before VBIAS. If VBIAS and VEN are present before VIN is applied and the set soft-start time has expired, then VOUT tracks VIN. If the soft-start time has not expired, the output tracks VIN until VOUT reaches the value set by the charging soft-start capacitor. Figure 28 shows the use of an RC-delay circuit to hold off VEN until VBIAS has ramped. This technique can also be used to drive EN from VIN. An external control signal can also be used to enable the device after VIN and VBIAS are present. NOTE: When VBIAS and VEN are present and VIN is not supplied, this device outputs approximately 50mA of current from OUT. Although this condition will not cause any damage to the device, the output current may charge up the OUT node if total resistance between OUT and GND (including external feedback resistors) is greater than 10kΩ. VIN IN VOUT OUT R1 CIN BIAS TPS74901 FB EN SS COUT R2 R VBIAS CBIAS C GND CSS Figure 28. Soft-Start Delay Using an RC Circuit on Enable Copyright © 2007–2010, Texas Instruments Incorporated OUTPUT NOISE The TPS749xx provides low output noise when a soft-start capacitor is used. When the device reaches the end of the soft-start cycle, the soft-start capacitor serves as a filter for the internal reference. By using a 0.001mF soft-start capacitor, the output noise is reduced by half and is typically 30mVRMS for a 1.2V output (10Hz to 100kHz). Further increasing CSS has little effect on noise, Because most of the output noise is generated by the internal reference, the noise is a function of the set output voltage. The RMS noise with a 0.001mF soft-start capacitor is given in Equation 3. VN(mVRMS) = 25 mVRMS x VOUT(V) V (3) The low output noise of the TPS749xx makes it a good choice for powering transceivers, PLLs, or other noise-sensitive circuitry. ENABLE/SHUTDOWN The enable (EN) pin is active high and is compatible with standard digital signaling levels. VEN below 0.4V turns the regulator off, while VEN above 1.1V turns the regulator on. Unlike many regulators, the enable circuitry has hysteresis and deglitching for use with relatively slowly ramping analog signals. This configuration allows the TPS749xx to be enabled by connecting the output of another supply to the EN pin. The enable circuitry typically has 50mV of hysteresis and a deglitch circuit to help avoid on-off cycling because of small glitches in the VEN signal. The enable threshold is typically 0.8V and varies with temperature and process variations. Temperature variation is approximately –1mV/°C; process variation accounts for most of the rest of the variation to the 0.4V and 1.1V limits. If precise turn-on timing is required, a fast rise-time signal must be used to enable the TPS749xx. If not used, EN can be connected to either IN or BIAS. If EN is connected to IN, it should be connected as close as possible to the largest capacitance on the input to prevent voltage droops on that line from triggering the enable circuit. POWER-GOOD The power-good (PG) pin is an open-drain output and can be connected to any 5.5V or lower rail through an external pull-up resistor. This pin requires at least 1.1V on VBIAS in order to have a valid output. The PG output is high-impedance when VOUT is greater than VIT + VHYS. If VOUT drops below VIT or if VBIAS drops below 1.9V, the open-drain output turns on and pulls the PG output low. The PG pin also asserts when the device is disabled. The recommended operating Submit Documentation Feedback 13 TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 condition of PG pin sink current is up to 1mA, so the pull-up resistor for PG should be in the range of 10kΩ to 1MΩ. PG is only provided on the QFN package. If output voltage monitoring is not needed, the PG pin can be left floating. INTERNAL CURRENT LIMIT The TPS749xx features a factory-trimmed, accurate current limit that is flat over temperature and supply voltage. The current limit allows the device to supply surges of up to 4A and maintain regulation. The current limit responds in about 10ms to reduce the current during a short-circuit fault. The internal current limit protection circuitry of the TPS749xx is designed to protect against overload conditions. It is not intended to allow operation above the rated current of the device. Continuously running the TPS749xx above the rated current degrades device reliability. THERMAL PROTECTION Thermal protection disables the output when the junction temperature rises to approximately +160°C, allowing the device to cool. When the junction temperature cools to approximately +140°C, the output circuitry is enabled. Depending on power dissipation, thermal resistance, and ambient temperature the thermal protection circuit may cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage as a result of overheating. Activation of the thermal protection circuit indicates excessive power dissipation or inadequate heatsinking. For reliable operation, junction temperature should be limited to +125°C maximum. To estimate the margin of safety in a complete design (including heatsink), increase the ambient temperature until thermal protection is triggered; use worst-case loads and signal conditions. For good reliability, thermal protection should trigger at least +40°C above the maximum expected ambient condition of the application. This condition produces a worst-case junction temperature of +125°C at the highest expected ambient temperature and worst-case load. The internal protection circuitry of the TPS749xx is designed to protect against overload conditions. It is not intended to replace proper heatsinking. Continuously running the TPS749xx into thermal shutdown degrades device reliability. 14 Submit Documentation Feedback www.ti.com LAYOUT RECOMMENDATIONS AND POWER DISSIPATION An optimal layout can greatly improve transient performance, PSRR, and noise. To minimize the voltage droop on the input of the device during load transients, the capacitance on IN and BIAS should be connected as close as possible to the device. This capacitance also minimizes the effects of parasitic inductance and resistance of the input source and can therefore improve stability. To achieve optimal transient performance and accuracy, the top side of R1 in Figure 25 should be connected as close as possible to the load. If BIAS is connected to IN it is recommended to connect BIAS as close to the sense point of the input supply as possible. This connection minimizes the voltage droop on BIAS during transient conditions and can improve the turn-on response. Knowing the device power dissipation and proper sizing of the thermal plane that is connected to the tab or pad is critical to avoiding thermal shutdown and ensuring reliable operation. Power dissipation of the device depends on input voltage and load conditions and can be calculated using Equation 4: PD = (VIN - VOUT) x IOUT (4) Power dissipation can be minimized and greater efficiency can be achieved by using the lowest possible input voltage necessary to achieve the required output voltage regulation. On the QFN (RGW) package, the primary conduction path for heat is through the exposed pad to the printed circuit board (PCB). The pad can be connected to ground or be left floating; however, it should be attached to an appropriate amount of copper PCB area to ensure the device will not overheat. On the DDPAK (KTW) package, the primary conduction path for heat is through the tab to the PCB. That tab should be connected to ground. The maximum junction-to-ambient thermal resistance depends on the maximum ambient temperature, maximum device junction temperature, and power dissipation of the device and can be calculated using Equation 5: RqJA = (+125°C - TA) PD (5) Knowing the maximum RqJA, the minimum amount of PCB copper area needed for appropriate heatsinking can be estimated using Figure 29. Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx www.ti.com SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 NOTE: When the device is mounted on an application PCB, it is strongly recommended to use ΨJT and ΨJB, as explained in the Estimating Junction Temperature section. 120 100 qJA (°C/W) 80 ESTIMATING JUNCTION TEMPERATURE 60 qJA (RGW) 40 20 qJA (KTW) 0 0 1 2 3 4 5 7 6 8 9 10 2 Board Copper Area (in ) Note: qJA value at board size of 9in2 (that is, 3in × 3in) is a JEDEC standard. Figure 29. qJA vs Board Size Figure 29 shows the variation of qJA as a function of ground plane copper area in the board. It is intended only as a guideline to demonstrate the effects of heat spreading in the ground plane and should not be used to estimate actual thermal performance in real application environments. Copyright © 2007–2010, Texas Instruments Incorporated Using the thermal metrics ΨJT and ΨJB, shown in the Thermal Information table, the junction temperature can be estimated with corresponding formulas (given in Equation 6). For backwards compatibility, an older qJC,Top parameter is listed as well. YJT: TJ = TT + YJT · PD YJB: TJ = TB + YJB · PD (6) Where PD is the power dissipation shown by Equation 4, TT is the temperature at the center-top of the IC package, and TB is the PCB temperature measured 1mm away from the IC package on the PCB surface (refer to Figure 30). NOTE: Both TT and TB can be measured on actual application boards using a thermo-gun (an infrared thermometer). For more information about measuring TT and TB, see the application note Using New Thermal Metrics (SBVA025), available for download at www.ti.com. Submit Documentation Feedback 15 TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 www.ti.com (1) TT on top of IC TB on PCB TT on top of IC 1mm TB on PCB surface (2) 1mm (a) Example RGW (QFN) Package Measurement (1) TT is measured at the center of both the X- and Y-dimensional axes. (2) TB is measured below the package lead on the PCB surface. (b) Example KTW (DDPAK) Package Measurement Figure 30. Measuring Points for TT and TB 16 Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated TPS749xx www.ti.com Looking at Figure 31, the RGW package thermal performance has negligible dependency on board size. The KTW package, however, does have a measurable dependency on board size. This dependency exists because the package shape is not point-symmetric to an IC center. In the KTW package, for example (see Figure 30), silicon is not beneath the measuring point of TT which is the center of the X and Y dimension, so that ΨJT has a dependency. Also, because of that non-point-symmetry, device heat distribution on the PCB is not point-symmetric, either, so that ΨJB has a dependency. space Copyright © 2007–2010, Texas Instruments Incorporated 12 10 YJT and YJB (°C/W) Compared with qJA, the new thermal metrics ΨJT and ΨJB are less independent of board size, but they do have a small dependency. Figure 31 shows characteristic performance of ΨJT and ΨJB versus board size. SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 YJB (RGW) 8 YJB (KTW) 6 4 YJT (KTW) 2 YJT (RGW) 0 0 2 4 6 8 10 2 Board Copper Area (in ) Figure 31. ΨJT and ΨJB vs Board Size For a more detailed discussion of why TI does not recommend using qJC,Top to determine thermal characteristics, refer to the application note Using New Thermal Metrics (SBVA025), available for download at www.ti.com. Also, refer to the application note IC Package Thermal Metrics (SPRA953) (also available on the TI web site) for further information. Submit Documentation Feedback 17 TPS749xx SBVS082G – JUNE 2007 – REVISED NOVEMBER 2010 www.ti.com REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision F (August, 2010) to Revision G • Page Corrected equation for and updated values for Table 2 ....................................................................................................... 5 Changes from Revision E (January, 2010) to Revision F Page • Replaced the Dissipation Ratings table with the Thermal Information table ........................................................................ 3 • Revised Layout Recommendations and Power Dissipation section ................................................................................... 14 • Added Estimating Junction Temperature ............................................................................................................................ 15 • Deleted (previously numbered) Figure 29 through Figure 33 ............................................................................................. 17 18 Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated PACKAGE OPTION ADDENDUM www.ti.com 7-Nov-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) TPS74901KTWR ACTIVE DDPAK/ TO-263 KTW 7 500 Green (RoHS & no Sb/Br) CU SN Level-2-260C-1 YEAR -40 to 125 TPS74901 TPS74901KTWRG3 ACTIVE DDPAK/ TO-263 KTW 7 500 Green (RoHS & no Sb/Br) CU SN Level-2-260C-1 YEAR -40 to 125 TPS74901 TPS74901KTWT ACTIVE DDPAK/ TO-263 KTW 7 50 Green (RoHS & no Sb/Br) CU SN Level-2-260C-1 YEAR -40 to 125 TPS74901 TPS74901KTWTG3 ACTIVE DDPAK/ TO-263 KTW 7 50 Green (RoHS & no Sb/Br) CU SN Level-2-260C-1 YEAR -40 to 125 TPS74901 TPS74901RGWR ACTIVE VQFN RGW 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 TPS 74901 TPS74901RGWRG4 ACTIVE VQFN RGW 20 TBD Call TI Call TI -40 to 125 TPS74901RGWT ACTIVE VQFN RGW 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 TPS 74901 TPS74901RGWTG4 ACTIVE VQFN RGW 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 TPS 74901 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com (4) 7-Nov-2014 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 9-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPS74901KTWR DDPAK/ TO-263 KTW 7 500 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2 TPS74901KTWT DDPAK/ TO-263 KTW 7 50 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2 TPS74901RGWR VQFN RGW 20 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2 TPS74901RGWT VQFN RGW 20 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 9-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS74901KTWR DDPAK/TO-263 KTW 7 500 367.0 367.0 45.0 TPS74901KTWT DDPAK/TO-263 KTW 7 50 367.0 367.0 45.0 TPS74901RGWR VQFN RGW 20 3000 367.0 367.0 35.0 TPS74901RGWT VQFN RGW 20 250 210.0 185.0 35.0 Pack Materials-Page 2 MECHANICAL DATA MPSF015 – AUGUST 2001 KTW (R-PSFM-G7) PLASTIC FLANGE-MOUNT 0.410 (10,41) 0.385 (9,78) 0.304 (7,72) –A– 0.006 –B– 0.303 (7,70) 0.297 (7,54) 0.0625 (1,587) H 0.055 (1,40) 0.0585 (1,485) 0.300 (7,62) 0.064 (1,63) 0.045 (1,14) 0.252 (6,40) 0.056 (1,42) 0.187 (4,75) 0.370 (9,40) 0.179 (4,55) 0.330 (8,38) H 0.296 (7,52) A 0.605 (15,37) 0.595 (15,11) 0.012 (0,305) C 0.000 (0,00) 0.019 (0,48) 0.104 (2,64) 0.096 (2,44) H 0.017 (0,43) 0.050 (1,27) C C F 0.034 (0,86) 0.022 (0,57) 0.010 (0,25) M B 0.026 (0,66) 0.014 (0,36) 0°~3° AM C M 0.183 (4,65) 0.170 (4,32) 4201284/A 08/01 NOTES: A. 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