STMICROELECTRONICS TYN410

TYNx10 Series
®
10A SCR
STANDARD
Table 1: Main Features
A
Symbol
Value
Unit
IT(RMS)
10
A
VDRM/VRRM
400, 600 and 800
V
IGT
15
mA
G
K
A
DESCRIPTION
The TYNx10 Silicon Controlled Rectifiers is a high
performance glass passivated technology.
This general purpose Silicon Controlled Rectifiers
is designed for power supply up to 400Hz on resistive or inductive load.
K
A
G
TO-220AB
Table 2: Order Codes
Part Numbers
TYN410RG
TYN610RG
TYN810RG
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
Marking
TYN410
TYN610
TYN810
Value
Unit
IT(RMS)
RMS on-state current (180° conduction angle)
Tc = 100°C
10
A
IT(AV)
Average on-state current (180° conduction angle)
Tc = 100°C
6.4
A
ITSM
Non repetitive surge peak on-state
current
tp = 10 ms
I²t Value for fusing
tp = 10 ms
I²t
dI/dt
Critical rate of rise of on-state current
IG = 100 mA , dIG/dt = 0.1 A/µs
IGM
Peak gate current
PG(AV)
PGM
VDRM
VRRM
Tstg
Tj
TL
tp = 8.3 ms
tp = 20 µs
Average gate power dissipation
Maximum gate power
tp = 20 µs
Tj = 25°C
TYN610
A2S
Tj = 125°C
50
A/µs
Tj = 125°C
4
A
Tj = 125°C
1
W
Tj = 125°C
10
W
400
Tj = 125°C
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s at 2mm from case
REV. 2
A
50
TYN810
February 2006
100
Tj = 25°C
TYN410
Repetitive peak off-state voltage
105
600
V
800
- 40 to + 150
- 40 to + 125
°C
260
°C
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TYNx10 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
IGT
Test Conditions
VD = 12 V (D.C.)
VGT
VD = VDRM
VGD
RL = 33 Ω
RL = 3.3 kΩ
Tj = 110°C
Value
Unit
MAX.
15
mA
MAX.
1.5
V
MIN.
0.2
V
tgt
VD = VDRM IG = 40 mA dIG/dt = 0.5 A/µs
TYP.
2
µs
IH
IT = 100 mA
MAX.
30
mA
IL
IG = 1.2 x IGT
TYP.
50
mA
MIN.
200
V/µs
MAX.
1.6
V
10
µA
2
mA
70
µs
Gate open
dV/dt
Linear slope up to:
VD = 67 % VDRM Gate open
VTM
ITM = 20 A
IDRM
IRRM
VDRM = VRRM
Tj = 110°C
tp = 380 µs
Tj = 25°C
MAX.
Tj = 110°C
VD = 67 % VDRM ITM = 20 A VR = 25 V
Tj = 110°C
dITM/dt = 30 A/µs dVD/dt = 50 V/µs
tq
TYP.
Table 5: Thermal Resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (D.C.)
2.5
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and Tlead)
P(W)
P(W)
12
Tcase(°C)
12
Rth = 6°C/W
Rth = 4°C/W
Rth = 2°C/W
Rth = 0°C/W
α = 180°
10
α = 120°
DC
α = 180°
α = 90°
8
α = 60°
6
10
100
8
105
6
110
4
115
α = 30°
4
360°
α
IT(AV)(A)
Tamb(°C)
125
0
0
0
2/6
120
2
2
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100
120
140
TYNx10 Series
Figure 3: Average on-state current versus case
temperature
Figure 4: Relative variation of
impedance versus pulse duration
IT(AV)(A)
thermal
K=[Zth(j-c)/Rth(j-c)]
12
1
Zth(j-c)
D.C.
10
8
α = 180°
Zth(j-a)
0.1
6
4
2
tp(s)
Tcase(°C)
0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
Figure 5: Relative variation of gate trigger
current versus junction temperature
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 6: Surge peak on-state current versus
number of cycles
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
ITSM(A)
2.5
120
2
100
tp=10ms
IGT
One cycle
80
1.5
Tj initial=25°C
60
IH & IL
1
40
0.5
20
Tj(°C)
0
-40 -30 -20
-10
0
10
20
30
40
50
60
70
80
90 100 110
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
Number of cycles
0
1
10
100
1000
Figure 8: On-state characteristics (maximum
values)
ITM(A)
ITSM(A), I2t (A2s)
1000
Tj initial = 25°C
Tj=max
ITSM
100
I2t
100
10
Tj=25°C
tp(ms)
10
1
1
2
Tj max.:
Vt0=0.82V
Rd=24mΩ
VTM(V)
5
10
0
1
2
3
4
5
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TYNx10 Series
Figure 9: Ordering Information Scheme
TYN
4
10
RG
Standard SCR series
Voltage
4 = 400V
Current
10 = 10A
Packing mode
RG = Tube
Table 6: Product Selector
Part Numbers
TYN410RG
TYN610RG
TYN810RG
4/6
Voltage (xxx)
400 V
600 V
800V
Sensitivity
Package
15 mA
TO-220AB
X
X
X
TYNx10 Series
Figure 10: TO-220AB Package Mechanical Data
REF.
C
B
ØI
b2
L
F
A
I4
l3
c2
a1
l2
a2
M
c1
b1
e
A
a1
a2
B
b1
b2
C
c1
c2
e
F
ØI
I4
L
l2
l3
M
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ.
15.20
15.90 0.598
3.75
0.147
13.00
14.00 0.511
10.00
10.40 0.393
0.61
0.88 0.024
1.23
1.32 0.048
4.40
4.60 0.173
0.49
0.70 0.019
2.40
2.72 0.094
2.40
2.70 0.094
6.20
6.60 0.244
3.75
3.85 0.147
15.80 16.40 16.80 0.622 0.646
2.65
2.95 0.104
1.14
1.70 0.044
1.14
1.70 0.044
2.60
0.102
Max.
0.625
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
0.661
0.116
0.066
0.066
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
Table 7: Ordering Information
Ordering type
Marking
TYN410RG
TYN410
TYN610RG
TYN610
TYN810RG
TYN810
Package
Weight
Base qty
Delivery mode
TO-220AB
2.3 g
50
Tube
Table 8: Revision History
Date
Sep-2001
Revision
1A
13-Feb-2006
2
Description of Changes
First issue.
TO-220AB delivery mode changed from bulk to tube.
ECOPACK statement added.
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TYNx10 Series
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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