VS-UFB280FA40 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications SOT-227 • Easy to use and parallel • Industry standard outline • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION The VS-UFB280FA40 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY VR 400 V IF(AV) per module at TC = 90 °C 280 A trr 40 ns Type Modules - Diode FRED Pt® These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR MAX. UNITS 400 V Continuous forward current per diode IF (1) TC = 90 °C 170 Single pulse forward current per diode IFSM TC = 25 °C 1300 PD TC = 90 °C 395 Maximum power dissipation per module RMS isolation voltage VISOL Operating junction and storage temperatures Any terminal to case, t = 1 minute TJ, TStg A W 2500 V - 55 to 175 °C Note (1) Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals. Document Number: 93458 Revision: 13-May-11 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Forward voltage VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 100 μA IF = 100 A IF = 100 A, TJ = 175 °C VR = VR rated MIN. TYP. MAX. 400 - - - 1.06 1.24 0.85 - 0.95 UNITS V - 1.3 50 μA 0.36 - 4 mA - 100 - pF MIN. TYP. MAX. UNITS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 40 - TJ = 25 °C - 93 - - 172 - - 10.5 - - 20.2 - TJ = 25 °C - 490 - TJ = 125 °C - 1740 - MIN. TYP. MAX. - - 0.43 - - 0.215 TJ = 175 °C, VR = VR rated VR = 400 V DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 150 A dIF/dt = 200 A/μs VR = 200 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS RthJC RthCS Flat, greased surface UNITS °C/W - 0.05 - Weight - 30 - g Mounting torque - 1.3 - Nm Case style www.vishay.com 2 SOT-227 For technical questions, contact: [email protected] Document Number: 93458 Revision: 13-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Insulated Ultrafast Rectifier Module, 280 A Vishay Semiconductors 100 TJ = 175 °C TJ = 25 °C 10 1 TJ = 175 °C 100 10 1 TJ = 25 °C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 100 0 2.5 200 400 300 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 10 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM 0.1 t1 DC t2 Single pulse (thermal resistance) 0.01 0.0001 0.001 0.01 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 93458 Revision: 13-May-11 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A 250 VR = 200 V TJ = 125 °C TJ = 25 °C 150 DC 100 75 Square wave (D = 0.50) 80 % rated VR applied 50 25 150 100 See note (1) 0 0 40 80 120 160 200 240 50 100 280 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 250 5000 225 4500 200 4000 VR = 200 V TJ = 125 °C TJ = 25 °C 3500 175 RMS limit 150 125 100 75 50 DC 25 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0 0 25 50 75 100 125 150 175 200 225 Qrr (nC) Average Power Loss (W) IF = 150 A IF = 75 A 200 125 trr (ns) Allowable Case Temperature (°C) 175 3000 IF = 150 A IF = 75 A 2500 2000 1500 1000 500 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93458 Revision: 13-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 Insulated Ultrafast Rectifier Module, 280 A Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93458 Revision: 13-May-11 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB280FA40 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A ORDERING INFORMATION TABLE Device code VS- UF B 280 F A 40 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (280 = 280 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard isolated base) 7 - Voltage rating (40 = 400 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93458 Revision: 13-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 Revision: 15-Nov-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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