Transistors with built-in Resistor UNR32A6 Silicon NPN epitaxial planar transistor Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For digital circuits 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C 0.15 min. 0.15 min. • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption 5° ■ Features 1.20±0.05 0.80±0.05 3 Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 80 mA Total power dissipation PT 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Symbol 0 to 0.01 Parameter 0.52±0.03 5° 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: HD Internal Connection R1 (4.7 kΩ) B C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 460 0.25 V Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ R1 Transition frequency fT Typ 160 IC = 10 mA, IB = 0.3 mA Output voltage high level Input resistance Min 4.9 −30% VCB = 10 V, IE = −2 mA, f = 200 MHz Max Unit V 4.7 150 0.2 V +30% kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2002 SJH00064AED 1 UNR32A6 IC VCE Ta = 25°C 80 0.9 mA 0.8 mA 100 Collector current IC (mA) Total power dissipation PT (mW) VCE(sat) IC 90 80 60 40 70 IB = 1.0 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 60 50 0.2 mA 40 30 0.1 mA 20 20 10 0 0 20 40 60 80 0 100 120 140 0 Ambient temperature Ta (°C) 2 4 25°C 200 100 1 10 100 10 1 0 10 20 Input voltage VIN (V) VO = 0.2 V Ta = 25°C 1 1 10 100 Output current IO (mA) 2 −25°C 25°C 0.1 0.01 1 10 SJH00064AED 100 1 000 Collector current IC (mA) 100 f = 1 MHz Ta = 25°C VIN IO 0.1 Ta = 85°C 1 IO VIN 30 Collector-base voltage VCB (V) Collector current IC (mA) 10 12 Output current IO (mA) Forward current transfer ratio hFE VCE = 10 V −25°C 0 10 IC / IB = 10 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 300 8 10 Collector-emitter voltage VCE (V) 400 Ta = 85°C 6 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 120 40 VO = 5 V Ta = 25°C 10 1 0.1 0 0.5 1.0 1.5 2.0 Input voltage VIN (V) 2.5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL