NEC UPD78P4908GF-3BA

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD78P4908
16-BIT SINGLE-CHIP MICROCONTROLLER
DESCRIPTION
The µPD78P4908, 78K/IV series' product, is a one-time PROM version of the µ PD784907 and µ PD784908 with
internal mask ROM.
Since user programs can be written to PROM, this microcomputer is best suited for evaluation in system
development, manufacture of small quantities of multiple products, and fast start-up of applications.
For specific functions and other detailed information, consult the following user's manuals.
These manuals are required reading for design work.
µPD784908 Subseries User's Manual - Hardware : U11787E
78K/IV Series User's Manual - Instruction
: U10905E
FEATURES
•
•
•
•
78K/IV series
Internal PROM: 128 Kbytes
Internal RAM:
4,352 bytes
Supply voltage: VDD = 4.5 to 5.5 V
(At main clock: fXX = 12.58 MHz, internal system clock = fXX : fCYK = 79 ns)
VDD = 4.0 to 5.5 V
(Other than above: fCYK = 159 ns)
ORDERING INFORMATION
Part number
µPD78P4908GF-3BA
Package
Internal ROM
100-pin plastic QFP (14 × 20 mm)
One-time PROM
The information in this document is subject to change without notice.
Document No. U11681EJ2V0DS00 (2nd edition)
Date Published February 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1996
µ PD78P4908
78K/IV SERIES PRODUCT DEVELOPMENT DIAGRAM
: Under mass production
: Under development
I2C bus supported
Multimaster I2C bus supported
µPD784038Y
µPD784225Y
µPD784038
Standard models
Enhanced internal memory capacity,
pin compatible with the µPD784026
µPD784026
Enhanced A/D,
16-bit timer,
and power
management
Multimaster I2C bus supported
Multimaster I2C bus supported
µPD784216Y
µPD784218Y
µPD784216
100 pins,
enhanced I/O and
internal memory capacity
µPD784054
µPD784046
ASSP models
Equipped with 10-bit A/D
µ PD784955
For DC inverter control
µ PD784938
µ PD784908
Equipped with IEBus
controller
TM
Enhanced function of the µPD784908,
enhanced internal memory capacity,
added ROM correction
Multimaster I2C bus supported
µ PD784928Y
µ PD784928
µPD784915
Enhanced function of the µPD784915
For software servo control,
equipped with analog circuit
for VCR,
enhanced timer
2
µPD784225
80 pins,
added ROM correction
Data Sheet U11681EJ2V0DS00
µPD784218
Enhanced internal memory capacity,
added ROM correction
µ PD78P4908
FUNCTIONS
(1/2)
Item
Function
Number of basic instructions
(mnemonics)
113
General-purpose register
8 bits × 16 registers × 8 banks, or 16 bits × 8 registers × 8 banks (memory mapping)
Minimum instruction execution
time
• 320 ns/636 ns/1.27 µ s/2.54 µs (at 6.29 MHz)
• 160 ns/320 ns/636 ns/1.27 µs (at 12.58 MHz)
Internal
memory
ROM
128 Kbytes
RAM
4,352 bytes
Program and data: 1 Mbyte
Memory space
I/O ports
Additional
function
pinsNote
Total
80
Input
8
Input/output
72
LED direct
drive outputs
24
Transistor
direct drive
8
N-ch open
drain
4
Real-time output ports
4 bits × 2, or 8 bits × 1
IEBus controller
Incorporated (simple version)
Timer/counter
Timer/counter 0:
(16 bits)
Timer register × 1
Capture register × 1
Compare register × 2
Pulse output capability
• Toggle output
• PWM/PPG output
• One-shot pulse output
Timer/counter 1:
(16 bits)
Timer register × 1
Capture register × 1
Capture/compare register × 1
Compare register × 1
Real-time output port
Timer/counter 2:
(16 bits)
Timer register × 1
Capture register × 1
Capture/compare register × 1
Compare register × 1
Pulse output capability
• Toggle output
• PWM/PPG output
Timer 3:
(16 bits)
Timer register × 1
Compare register × 1
Clock timer
Interrupt requests are generated at 0.5-second intervals. (A clock timer oscillator is
incorporated.)
Either the main clock (6.29 MHz/12.58 MHz) or real-time clock (32.768 kHz) can be
selected as the input clock.
Clock output
Selected from f CLK, fCLK/2, f CLK/4, fCLK/8, or fCLK/16 (can be used as a 1-bit output port)
PWM outputs
12-bit resolution × 2 channels
Serial interface
UART/IOE (3-wire serial I/O) : 2 channels (incorporating baud rate generator)
CSI (3-wire serial I/O)
: 2 channels
Note Additional function pins are included in the I/O pins.
Data Sheet U11681EJ2V0DS00
3
µ PD78P4908
(2/2)
Item
Function
A/D converter
8-bit resolution × 8 channels
Watchdog timer
1 channel
Standby
HALT/STOP/IDLE mode
Interrupt
Hardware source
27 (20 internal, 7 external (sampling clock variable input: 1))
Software source
BRK or BRKCS instruction, operand error
Nonmaskable
1 internal, 1 external
Maskable
19 internal, 6 external
• 4-level programmable priority
• 3 operation statuses: vectored interrupt, macro service, context switching
Power supply voltage
• VDD = 4.5 to 5.5 V (At main clock: fXX = 12.58 MHz, internal system clock = fXX: fCYK =
79 ns)
• VDD = 4.0 to 5.5 V (Other than above: fCYK = 159 ns)
Package
4
100-pin plastic QFP (14 × 20 mm)
Data Sheet U11681EJ2V0DS00
µ PD78P4908
CONTENTS
1.
DIFFERENCES BETWEEN µPD78P4908 AND MASK ROM PRODUCTS ............................
6
2.
PIN CONFIGURATION (TOP VIEW) .........................................................................................
7
3.
BLOCK DIAGRAM .....................................................................................................................
10
4.
PIN FUNCTIONS ........................................................................................................................
11
4.1
PINS FOR NORMAL OPERATING MODE ....................................................................................
11
4.2
PINS FOR PROM PROGRAMMING MODE (V PP ≥ +5 V or +12.5 V, RESET = L) ....................
14
4.2.1
Pin Functions .................................................................................................................
14
4.2.2
Pin Functions .................................................................................................................
15
I/O CIRCUITS FOR PINS AND HANDLING OF UNUSED PINS .................................................
16
5.
INTERNAL MEMORY SIZE SELECT REGISTER (IMS) ..........................................................
19
6.
PROM PROGRAMMING ............................................................................................................
20
4.3
6.1
OPERATION MODE ........................................................................................................................
20
6.2
PROM WRITE SEQUENCE ............................................................................................................
22
6.3
PROM READ SEQUENCE .............................................................................................................
26
7.
SCREENING ONE-TIME PROM PRODUCTS ..........................................................................
26
8.
ELECTRICAL CHARACTERISTICS .........................................................................................
27
9.
PACKAGE DRAWING ................................................................................................................
51
10. RECOMMENDED SOLDERING CONDITIONS ........................................................................
52
APPENDIX A DEVELOPMENT TOOLS..........................................................................................
53
APPENDIX B CONVERSION SOCKET (EV-9200GF-100) PACKAGE DRAWING .....................
56
APPENDIX C RELATED DOCUMENTS .........................................................................................
58
Data Sheet U11681EJ2V0DS00
5
µ PD78P4908
1. DIFFERENCES BETWEEN µPD78P4908 AND MASK ROM PRODUCTS
The µPD78P4908 is produced by replacing the mask ROM in the µ PD784907 or µ PD784908 with PROM to which
data can be written. The functions of the µPD78P4908 are the same as those of the µ PD784907 or µPD784908 except
for the PROM specification such as writing and verification, except that the PROM size can be changed to 96 or 128
Kbytes, and except that the internal RAM size can be changed to 3,584 or 4,352 bytes.
Table 1-1 shows the differences between these products.
Table 1-1. Differences Between the µPD78P4908 and Mask ROM Products
Product name
Item
Internal program
memory
µ PD784907
µPD78P4908
• 128-Kbyte PROM
• Can be changed to 96
µ PD784908
• 96-Kbyte mask ROM
• 128-Kbyte mask ROM
• 3,584-byte internal RAM
• 4,352-byte internal RAM
Kbytes by IMS
Internal RAM
• 4,352-byte internal RAM
• Can be changed to 3,584
bytes by IMS
Pin connection
Pin functions related to writing or reading of PROM have been added to the µPD78P4908.
Power supply voltage
• VDD = 4.5 to 5.5 V
• VDD = 4.0 to 5.5 V
(At main clock: fXX = 12.58
MHz, internal system clock =
f XX: fCYK = 79 ns
• VDD = 4.0 to 5.5 V
(Other than above: fCYK =
159 ns)
(At main clock: fXX = 12.58 MHz, internal system clock = fXX :
fCYK = 79 ns)
• VDD = 3.5 to 5.5 V
(Other than above: fCYK = 159 ns)
Electrical
characteristics
6
Partially differs between these products.
Data Sheet U11681EJ2V0DS00
µ PD78P4908
2. PIN CONFIGURATION (TOP VIEW)
(1) Normal operation mode
• 100-pin plastic QFP (14 × 20 mm)
P30/RxD/SI1
P27/SI0
P26/INTP5
P25/INTP4/ASCK/SCK1
P24/INTP3
P23/INTP2/CI
P22/INTP1
P21/INTP0
P20/NMI
TX
RX
AVSS
AVREF1
AVDD
P77/ANI7
P76/ANI6
P75/ANI5
P74/ANI4
P73/ANI3
P72/ANI2
P71/ANI1
P70/ANI0
TESTNote 1
PWM1
PWM0
P17
P16
P15
P14/TxD2/SO2
P13/RxD2/SI2
P12/ASCK2/SCK2
P11
P10
ASTB/CLKOUT
P90
P91
P92
P93
P94
P95
P96
P97
P40/AD0
P41/AD1
P42/AD2
P52/A10
P51/A9
P50/A8
P47/AD7
P46/AD6
P45/AD5
P44/AD4
P43/AD3
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
74
7
73
8
9
72
71
10
70
11
12
69
13
68
14
67
15
66
65
16
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
P64/RD
P63/A19
P62/A18
P61/A17
P60/A16
P57/A15
P56/A14
P55/A13
P54/A12
VSS
VDD
P53/A11
P36/TO2
P37/TO3
P100
P101
P102
P103
P104
P105/SCK3
P106/SI3
P107/SO3
RESET
XT2
XT1
VSS
X2
X1
REGOFFNote 2
REGCNote 3
VDD
P00
P01
P02
P03
P04
P05
P06
P07
P67/REFRQ/HLDAK
P66/WAIT/HLDRQ
P65/WR
P34/TO0
P33/SO0
P32/SCK0
P31/TxD/SO1
P35/TO1
µPD78P4908GF-3BA
Notes 1. Connect the TEST pin to VSS directly.
2. Connect the REGOFF pin to V SS directly (select regulator operation)
3. Connect the REGC pin to VSS through a 1-µ F capacitor.
Data Sheet U11681EJ2V0DS00
7
µ PD78P4908
8
A8-A19
: Address bus
PWM0, PWM1 : Pulse width modulation output
AD0-AD7
: Address/data bus
RD
: Read strobe
ANI0-ANI7
: Analog input
REFRQ
: Refresh request
ASCK, ASCK2 : Asynchronous serial clock
REGC
: Regulator capacitance
ASTB
: Address strobe
REGOFF
: Regulator off
AVDD
: Analog power supply
RESET
: Reset
AVREF1
: Reference voltage
RX
: IEBus receive data
AVSS
: Analog ground
RxD, RxD2
: Receive data
CI
: Clock input
SCK0-SCK3
: Serial clock
CLKOUT
: Clock output
SI0-SI3
: Serial input
HLDAK
: Hold acknowledge
SO0-SO3
: Serial output
HLDRQ
: Hold request
TEST
: Test
INTP0-INTP5 : Interrupt from peripherals
TO0-TO3
: Timer output
NMI
: Non-maskable interrupt
TX
: IEBus transmit data
P00-P07
: Port 0
TxD, TxD2
: Transmit data
P10-P17
: Port 1
VDD
: Power supply
P20-P27
: Port 2
VSS
: Ground
P30-P37
: Port 3
WAIT
: Wait
P40-P47
: Port 4
WR
: Write strobe
P50-P57
: Port 5
X1, X2
: Crystal (main system clock)
P60-P67
: Port 6
XT1, XT2
: Crystal (watch)
P70-P77
: Port 7
P90-P97
: Port 9
P100-P107
: Port 10
Data Sheet U11681EJ2V0DS00
µ PD78P4908
(2) PROM programming mode
• 100-pin plastic QFP (14 × 20 mm)
RESET
OPEN
VSS
VSS
OPEN
VSS
VDD
D0
D1
D2
D3
D4
D5
D6
D7
(L)
PGM
CE
OPEN
VPP
OPEN
A0
A1
A2
A4
A3
A6
A5
VDD
A11
A10
A16
A8
A7
A15
A14
A13
A12
VSS
(L)
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
OE
VSS
(L)
A9
VSS
OPEN
OPEN
VSS
VSS
VDD
OPEN
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
OPEN
Caution L
VSS
OPEN
µPD78P4908GF-3BA
: Connect these pins separately to the VSS pins through 10-kΩ pull-down resistors.
: To be connected to the ground.
Open : Nothing should be connected on these pins.
RESET: Set a low-level input.
A0-A16
: Address bus
RESET
: Reset
CE
: Chip enable
VDD
: Power supply
D0-D7
: Data bus
VPP
: Programming power supply
OE
: Output enable
VSS
: Ground
PGM
: Program
Data Sheet U11681EJ2V0DS00
9
µ PD78P4908
3. BLOCK DIAGRAM
NMI
INTP0-INTP5
INTP3
TO0
TO1
INTP0
INTP1
INTP2/CI
TO2
TO3
UART/IOE2
Programmable
interrupt controller
Baud-rate
generator
UART/IOE1
Timer/counter 0
(16 bits)
Baud-rate
generator
Timer/counter 1
(16 bits)
RxD/SI1
TxD/SO1
ASCK/SCK1
RxD2/SI2
TxD2/SO2
ASCK2/SCK2
SCK0
Clocked serial
interface
SO0
SI0
Timer/counter 2
(16 bits)
78K /IV
CPU core
(RAM 512 bytes)
ROM
(128 Kbytes)
Timer 3
(16 bits)
SCK3
Clocked serial
interface 3
Clock output
SO3
SI3
ASTB /CLKOUT
AD0-AD7
A8-A15
P00-P03
Real-time output
port
P04-P07
Bus interface
PWM0
PWM
PWM1
RAM
(3,840 bytes)
ANI0-ANI7
AVDD
AVREF1
A /D converter
AVSS
INTP5
TX
IEBus controller
RX
RESET
TEST
X1
X2
REGC
REGOFF
VPPNote
VDD
VSS
System control
(regulator)
Port 0
P00-P07
Port 1
P10-P17
Port 2
P20-P27
Port 3
P30-P37
Port 4
P40-P47
Port 5
P50-P57
Port 6
P60-P67
Port 7
P70-P77
Port 9
P90-P97
Watchdog timer
Port 10
XT1
Watch timer
XT2
Note In the PROM programming mode.
10
A16-A19
RD
WR
WAIT/HLDRQ
REFRQ/HLDAK
D0-D7Note
A0-A16Note
CENote
OENote
PGMNote
Data Sheet U11681EJ2V0DS00
P100-P107
µ PD78P4908
4. PIN FUNCTIONS
4.1
PINS FOR NORMAL OPERATING MODE
(1) Port pins (1/2)
I/O
Pin
Function
Also used as
P00-P07
I/O
—
Port 0 (P0):
• 8-bit I/O port.
• Functions as a real-time output port (4 bits × 2).
• Inputs and outputs can be specified bit by bit.
• The use of built-in pull-up resistors can be simultaneously specified by
software for all pins in input mode.
• Can drive a transistor.
P10
I/O
—
Port 1 (P1):
• 8-bit I/O port.
• Inputs and outputs can be specified bit by bit.
• The use of built-in pull-up resistors can be simultaneously specified by
software for all pins in input mode.
• Can drive LED.
—
P11
P12
ASCK2/SCK2
P13
RxD2/SI2
P14
TxD2/SO2
—
P15-P17
P20
Input
NMI
P21
INTP0
P22
INTP1
P23
INTP2/CI
P24
INTP3
P25
INTP4/ASCK/SCK1
P26
INTP5
P27
SI0
P30
I/O
RxD/SI1
P31
TxD/SO1
P32
SCK0
P33
SO0
P34-P37
TO0-TO3
P40-P47
I/O
AD0-AD7
Port 2 (P2):
• 8-bit input-only port.
• P20 does not function as a general-purpose port (nonmaskable
interrupt). However, the input level can be checked by an interrupt
service routine.
• The use of built-in pull-up resistors can be specified by software for pins
P22 to P27 (in units of 6 bits).
• The P25/INTP4/ASCK/SCK1 pin functions as the SCK1 input/output pin
by CSIM1.
Port 3 (P3):
• 8-bit I/O port.
• Inputs and outputs can be specified bit by bit.
• The use of built-in pull-up resistors can be simultaneously specified by
software for all pins in input mode.
• P32 and P33 can be set as the N-ch open-drain pin.
Port 4 (P4):
• 8-bit I/O port.
• Inputs and outputs can be specified bit by bit.
• The use of built-in pull-up resistors can be simultaneously specified by
software for all pins in input mode.
• Can drive LED.
Data Sheet U11681EJ2V0DS00
11
µ PD78P4908
(1) Port pins (2/2)
Pin
I/O
Also used as
Function
P50-P57
I/O
A8-A15
Port 5 (P5):
• 8-bit I/O port.
• Inputs and outputs can be specified bit by bit.
• The use of built-in pull-up resistors can be simultaneously specified by
software for all pins in input mode.
• Can drive LED.
P60-P63
I/O
A16-A19
Port 6 (P6):
• 8-bit I/O port.
• Inputs and outputs can be specified bit by bit.
• The use of built-in pull-up resistors can be simultaneously specified by
software for all pins in input mode.
P64
RD
P65
WR
P66
WAIT/HLDRQ
P67
REFRQ/HLDAK
P70-P77
I/O
ANI0-ANI7
P90-P97
I/O
—
Port 9 (P9):
• 8-bit I/O port.
• Inputs and outputs can be specified bit by bit.
• The use of built-in pull-up resistors can be simultaneously specified by
software for all pins in input mode.
P100-P104
I/O
—
Port 10 (P10):
• 8-bit I/O port.
• Inputs and outputs can be specified bit by bit.
• The use of built-in pull-up resistors can be simultaneously specified by
software for all pins in input mode.
• P105 and P107 can be set as the N-ch open-drain pin.
P105
SCK3
P106
SI3
P107
SO3
12
Port 7 (P7):
• 8-bit I/O port.
• Inputs and outputs can be specified bit by bit.
Data Sheet U11681EJ2V0DS00
µ PD78P4908
(2) Non-port pins (1/2)
Pin
I/O
TO0-TO3
Output
P34-P37
Timer output
CI
Input
P23/INTP2
Input of a count clock for timer/counter 2
RxD
Input
P30/SI1
Serial data input (UART0)
P13/SI2
Serial data input (UART2)
P31/SO1
Serial data output (UART0)
P14/SO2
Serial data output (UART2)
P25/INTP4/SCK1
Baud rate clock input (UART0)
P12/SCK2
Baud rate clock input (UART2)
P27
Serial data input (3-wire serial I/O 0)
SI1
P30/RxD
Serial data input (3-wire serial I/O 1)
SI2
P13/RxD2
Serial data input (3-wire serial I/O 2)
SI3
P106
Serial data input (3-wire serial I/O 3)
P33
Serial data output (3-wire serial I/O 0)
SO1
P31/TxD
Serial data output (3-wire serial I/O 1)
SO2
P14/TxD2
Serial data output (3-wire serial I/O 2)
SO3
P107
Serial data output (3-wire serial I/O 3)
P32
Serial clock I/O (3-wire serial I/O 0)
SCK1
P25/INTP4/ASCK
Serial clock I/O (3-wire serial I/O 1)
SCK2
P12/ASCK2
Serial clock I/O (3-wire serial I/O 2)
SCK3
P105
Serial clock I/O (3-wire serial I/O 3)
P20
External interrupt request
RxD2
TxD
Output
TxD2
ASCK
Input
ASCK2
SI0
SO0
SCK0
NMI
Input
Output
I/O
Input
Function
Also used as
—
INTP0
P21
• Input of a count clock for timer/counter 1
• Capture/trigger signal for CR11 or CR12
INTP1
P22
• Input of a count clock for timer/counter 2
• Capture/trigger signal for CR22
INTP2
P23/CI
• Input of a count clock for timer/counter 2
• Capture/trigger signal for CR21
INTP3
P24
• Input of a count clock for timer/counter 0
• Capture/trigger signal for CR02
INTP4
P25/ASCK/SCK1
INTP5
P26
—
Input of a conversion start trigger for A/D converter
AD0-AD7
I/O
P40-P47
Time multiplexing address/data bus (for connecting external memory)
A8-A15
Output
P50-P57
High-order address bus (for connecting external memory)
A16-A19
Output
P60-P63
High-order address during address expansion (for connecting external memory)
RD
Output
P64
Strobe signal output for reading the contents of external memory
WR
Output
P65
Strobe signal output for writing on external memory
WAIT
Input
P66/HLDRQ
Wait signal insertion
REFRQ
Output
P67/HLDAK
Refresh pulse output to external pseudo static memory
HLDRQ
Input
P66/WAIT
Input of bus hold request
HLDAK
Output
P67/REFRQ
Output of bus hold response
ASTB
Output
CLKOUT
Latch timing output of time multiplexing address (A0-A7) (for connecting
external memory)
Data Sheet U11681EJ2V0DS00
13
µ PD78P4908
(2) Non-port pins (2/2)
Pin
I/O
Function
CLKOUT
Output
PWM0
Output
—
PWM output 0
PWM1
Output
—
PWM output 1
RX
Input
—
Data input (IEBus)
TX
Output
—
Data output (IEBus)
Also used as
Clock output
ASTB
REGC
—
—
Capacitor connection for stabilizing the regulator output/Power supply
when the regulator is stopped. Connect to VSS via a 1-µF capacitor.
REGOFF
—
—
Signal for specifying regulator operation. Directly connect to V SS (regulator
selected).
RESET
Input
—
Chip reset
X1
Input
—
Crystal input for system clock oscillation (A clock pulse can also be input
to the X1 pin.)
—
Real-time clock connection
X2
—
XT1
Input
XT2
—
ANI0-ANI7
Input
AVREF1
—
P70-P77
—
Analog voltage inputs for the A/D converter
—
Application of A/D converter reference voltage
AVDD
Positive power supply for the A/D converter
AVSS
Ground for the A/D converter
VDD
Positive power supply
VSS
Ground
TEST
Input
Directly connect to V SS . (The TEST pin is for the IC test.)
PINS FOR PROM PROGRAMMING MODE (V PP ≥ +5 V or +12.5 V, RESET = L)
4.2
4.2.1 Pin Functions
I/O
Pin name
VPP
RESET
—
Input
Function
PROM programming mode selection
High voltage input during program write or verification
PROM programming mode selection
Address bus
A0-A16
D0-D7
I/O
Data bus
CE
Input
PROM enable input/program pulse input
OE
Read strobe input to PROM
PGM
Program/program inhibit input during PROM programming mode
VDD
—
Positive power supply
VSS
—
GND
14
Data Sheet U11681EJ2V0DS00
µ PD78P4908
4.2.2
Pin Functions
(1) VPP (Programming power supply): Input
Input pin for setting the µ PD78P4908 to the PROM programming mode. When the input voltage on this pin is
+6.5 V or more and when RESET input goes low, the µ PD78P4908 enters the PROM programming mode.
When CE is made low for VPP = +12.5 V and OE = high, program data on D0 to D7 can be written into the internal
PROM cell selected by A0 to A16.
(2) RESET (Reset): Input
Input pin for setting the µ PD78P4908 to the PROM programming mode. When input on this pin is low, and when
the input voltage on the V PP pin goes +5 V or more, the µPD78P4908 enters the PROM programming mode.
(3) A0 to A16 (Address bus): Input
Address bus that selects an internal PROM address (0000H to 1FFFFH)
(4) D0 to D7 (Data bus): I/O
Data bus through which a program is written on or read from internal PROM
(5) CE (Chip enable): Input
This pin inputs the enable signal from internal PROM. When this signal is active, a program can be written or
read.
(6) OE (Output enable): Input
This pin inputs the read strobe signal to internal PROM. When this signal is made active for CE = low, a onebyte program in the internal PROM cell selected by A0 to A16 can be read onto D0 to D7.
(7) PGM (Program): Input
The input pin for the operation mode control signal of the internal PROM.
Upon activation, writing to the internal PROM is enabled.
Upon inactivation, reading from the internal PROM is enabled.
(8) VDD
Positive power supply pin
(9) VSS
Ground potential pin
Data Sheet U11681EJ2V0DS00
15
µ PD78P4908
4.3
I/O CIRCUITS FOR PINS AND HANDLING OF UNUSED PINS
Table 4-1 describes the types of I/O circuits for pins and the handling of unused pins.
Figure 4-1 shows the configuration of these various types of I/O circuits.
Table 4-1. Types of I/O Circuits for Pins and Handling of Unused Pins (1/2)
I/O circuit type
Pin
P00-P07
5-A
I/O
I/O
Input state: To be connected to VDD
Output state: To be left open
Input
To be connected to V DD or V SS
P10, P11
P12/ASCK2/SCK2
8-A
P13/R XD2/SI2
5-A
Recommended connection method for unused pins
P14/TXD2/SO2
P15-P17
P20/NMI
2
P21/INTP0
P22/INTP1
2-A
To be connected to V DD
P23/INTP2/CI
P24/INTP3
P25/INTP4/ASCK/SCK1
8-A
I/O
Input state: To be connected to V DD
Output state: To be left open
P26/INTP5
2-A
Input
To be connected to V DD
5-A
I/O
Input state: To be connected to V DD
Output state: To be left open
I/O
Input state:
Output
To be left open
P27/SI0
P30/R XD/SI1
P31/TXD/SO1
P32/SCK0
10-A
P33/SO0
P34/TO0-P37/TO3
5-A
P40/AD0-P47/AD7
P50/A8-P57/A15
P60/A16-P63/A19
P64/RD
P65/WR
P66/WAIT/HLDRQ
P67/REFRQ/HLDAK
P70/ANI0-P77/ANI7
20
P90-P97
5-A
To be connected to VDD or VSS
Output state : To be left open
P100-P104
P105/SCK3
10-A
P106/SI3
8-A
P107/SO3
10-A
ASTB/CLKOUT
4
16
Data Sheet U11681EJ2V0DS00
µ PD78P4908
Table 4-1. Types of I/O Circuits for Pins and Handling of Unused Pins (2/2)
Pin
I/O
I/O circuit type
RESET
2
TEST
1
XT2
Recommended connection method for unused pins
Input
—
To be connected to V SS directly
—
—
To be left open
XT1
Input
To be connected to V SS
PWM0, PWM1
3
Output
To be left open
1
Input
To be connected to V DD or V SS
3
Output
To be left open
RX
TX
AVREF1
—
—
To be connected to V SS
AVSS
To be connected to V DD
AVDD
Caution When the I/O mode of an I/O dual-function pin is unpredictable, connect the pin to VDD through
a resistor of 10 to 100 kΩ (particularly when the voltage of the reset input pin becomes higher
than that of the low level input at power-on or when I/O is switched by software).
Remark Since type numbers are consistent in the 78K series, those numbers are not always serial in each product.
(Some circuits are not included.)
Data Sheet U11681EJ2V0DS00
17
µ PD78P4908
Figure 4-1. I/O Circuits for Pins
Type 1
Type 2-A
VDD
VDD
P
Pull-up
enable
P
IN
N
IN
Type 2
Schmitt trigger input with hysteresis characteristics
IN
Type 5-A
Schmitt trigger input with hysteresis characteristics
Type 3
VDD
Pull-up
enable
VDD
P
VDD
P
Data
P-ch
Data
IN/OUT
OUT
Output
disable
N-ch
N
Input
enable
Type 4
VDD
Data
Type 8-A
P
OUT
Output
disable
N
VDD
Pull-up
enable
P
VDD
P
Data
Push-pull output which can output high impedance
(both the positive and negative channels are off.)
IN/OUT
Output
disable
Type 10-A
N
VDD
Pull-up
enable
P
Type 20
VDD
VDD
P
Data
Data
P
IN/OUT
Open
drain
Output
disable
IN/OUT
N
Output
disable
N
Comparator
+
–
Type 12
Analog output
voltage
OUT
N
18
VREF
(Threshold voltage)
P
Input
enable
Data Sheet U11681EJ2V0DS00
P
N
µ PD78P4908
5. INTERNAL MEMORY SIZE SELECT REGISTER (IMS)
This register enables the software to avoid using part of the internal memory. The IMS can be set to establish
the same memory mapping as used in mask ROM products that have different internal memory (ROM and RAM)
configurations.
The IMS is set using 8-bit memory operation instructions.
A RESET input sets the IMS to FFH.
Figure 5-1. Internal Memory Size Select Register (IMS)
IMS
7
6
5
4
3
2
1
0
Address
Reset value
R/W
IMS7
IMS6
IMS5
IMS4
IMS3
IMS2
IMS1
IMS0
0FFFCH
FFH
W
IMS0-7
Memory size
FFH
Same as the µPD784908
EEH
Same as the µPD784907
Other than
the above
Not to be set
The IMS is not contained in a mask ROM product (µ PD784907 or µ PD784908). But the action is not affected if
the write command to the IMS is executed to the mask ROM product.
Data Sheet U11681EJ2V0DS00
19
µ PD78P4908
6.
PROM PROGRAMMING
The µ PD78P4908 has an on-chip 128-KB PROM device for use as program memory. When programming, set
the VPP and RESET pins for PROM programming mode. See 2. PIN CONFIGURATION (TOP VIEW) (2) PROM
programming mode with regard to handling of other, unused pins.
6.1
OPERATION MODE
PROM programming mode is selected when +6.5 V is added to the VDD pin, +12.5 V is added to the VPP pin, or
low-level input is added to the RESET pin. This mode can be set to operation mode by setting the CE pin, OE pin,
and PGM pin as shown in Table 6-1 below.
In addition, the PROM contents can be read by setting read mode.
Table 6-1. PROM Programming Operation Mode
Pin
RESET
V PP
VDD
CE
OE
PGM
D0-D7
Operation mode
Page data latch
H
L
H
Data input
Page write
H
H
L
High impedance
Byte write
L
H
L
Data input
Program verify
L
L
H
Data output
Program inhibit
×
H
H
High impedance
×
L
L
L
L
H
Data output
Output disable
L
H
×
High impedance
Standby
H
×
×
High impedance
Read
L
+12.5 V
+5 V
+6.5 V
+5 V
Remark × = L or H
20
Data Sheet U11681EJ2V0DS00
µ PD78P4908
(1) Read mode
Set CE to L and OE to L to set read mode.
(2) Output disable mode
Set OE to H to set high impedance for data output and output disable mode.
Consequently, if several µ PD78P4908 devices are connected to a data bus, the OE pins can be controlled to
select data output from any of the devices.
(3) Standby mode
Set CE to H to set standby mode.
In this mode, data output is set to high impedance regardless of the OE setting.
(4) Page data latch mode
At the beginning of page write mode, set CE to H, PGM to H, and OE to L to set page data latch mode.
In this mode, 1 page (4 bytes) of data are latched to the internal address/data latch circuit.
(5) Page write mode
After latching the address and data for one page (4 bytes) using page data latch mode, adding a 0.1 ms program
pulse (active, low) to the PGM pin with both CE and OE set to H causes page write to be executed. Later, setting
both CE and OE to L causes program verification to be executed.
If programming is not completed after one program pulse, the write and verify operations may be repeated X times
(where X ≤ 10).
(6) Byte write mode
Adding a 0.1 ms program pulse (active, low) to the PGM pin with setting CE to L and OE to H causes byte write
to be executed. Later, setting OE to L causes program verification to be executed.
If programming is not completed after one program pulse, the write and verify operations may be repeated X times
(where X ≤ 10).
(7) Program verify mode
Set CE to L, PGM to H, and OE to L to set program verify mode. Use verify mode for verification following each
write operation.
(8) Program inhibit mode
Program inhibit mode is used to write to a single device when several µPD78P4908 devices are connected in
parallel to OE , V PP, and D0 to D7 pins.
Use the page write mode or byte write mode described above for each write operation. Write operations cannot
be done for devices in which the PGM pin has been set to H.
Data Sheet U11681EJ2V0DS00
21
µ PD78P4908
6.2
PROM WRITE SEQUENCE
Figure 6-1. Page Program Mode Flowchart
Start
Address = G
VDD = +6.5 V, VPP = +12.5 V
X=0
Latch
Address = Address + 1
Latch
Address = Address + 1
Latch
Address = Address + 1
Address = Address + 1
Latch
No
X=X+1
X = 10 ?
Yes
0.1 ms program pulse
Verify 4 bytes
Fail
Pass
No
Address = N ?
Yes
VDD = 4.0 to 5.5 V, VPP = VDD
Pass
Verify all bytes
Fail
All pass
Write end
Remark G = Start address
N = Program end address
22
Data Sheet U11681EJ2V0DS00
Defective
µ PD78P4908
Figure 6-2. Page Program Mode Timing
Page data latch
Page program
Program verify
A2-A16
A0, A1
Hi-Z
Hi-Z
D0-D7
Data input
Data output
VPP
VPP
VDD
VDD + 1.5
VDD
VDD
VIH
CE
VIL
VIH
PGM
VIL
VIH
OE
VIL
Data Sheet U11681EJ2V0DS00
23
µ PD78P4908
Figure 6-3. Byte Program Mode Flowchart
Start
Address = G
VDD = +6.5 V, VPP = +12.5 V
X= 0
No
X= X + 1
X = 10 ?
Yes
0.1 ms program pulse
Address = Address + 1
Verify
Fail
Pass
No
Address = N ?
Yes
VDD = 4.0 to 5.5 V, VPP = VDD
Pass
Verify all bytes
Fail
All pass
Write end
Remark G = Start address
N = Program end address
24
Data Sheet U11681EJ2V0DS00
Defective
µ PD78P4908
Figure 6-4. Byte Program Mode Timing
Program
Program verify
A0-A16
D0-D7
Hi-Z
Data input
Hi-Z
Data output
Hi-Z
VPP
VPP
VDD
VDD + 1.5
VDD
VDD
VIH
CE
VIL
VIH
PGM
VIL
VIH
OE
VIL
Cautions 1. Add VDD before VPP , and turn off the VDD after V PP.
2. Do not allow VPP to exceed 13.5 V including overshoot.
3. Reliability problems may result if the device is inserted or pulled out while 12.5 V is applied
at VPP.
Data Sheet U11681EJ2V0DS00
25
µ PD78P4908
6.3
PROM READ SEQUENCE
Follow this sequence to read the PROM contents to an external data bus (D0 to D7).
(1) Set the RESET pin to low level and add 5 V to the VPP pin. See 2. PIN CONFIGURATION (TOP VIEW) (2) PROM
programming mode with regard to handling of other, unused pins.
(2) Add 5 V to the VDD and VPP pins.
(3) Input the data address to be read to pins A0 to A16.
(4) Set read mode.
(5) Output the data to pins D0 to D7.
Figure 6-5 shows the timing of steps (2) to (5) above.
Figure 6-5. PROM Read Timing
A0-A16
Address input
CE (input)
OE (input)
D0-D7
Hi-Z
Data output
Hi-Z
7. SCREENING ONE-TIME PROM PRODUCTS
NEC cannot execute a complete test of one-time PROM products ( µPD78P4908GF-3BA) due to their structure
before shipment. It is recommended that you screen (verify) PROM products after writing necessary data into them
and storing them at 125°C for 24 hours.
26
Data Sheet U11681EJ2V0DS00
µ PD78P4908
8. ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C)
Parameter
Supply voltage
Input voltage
Symbol
Conditions
Rating
Unit
–0.3 to +7.0
V
AVDD
–0.3 to VDD + 0.3
V
AVSS
–0.3 to +0.3
V
–0.3 to VDD + 0.3
V
–0.3 to +13.5
V
VDD
VI1
For pins other than V PP, A9
VI2
VPP, A9
Analog input voltage
VAN
AVSS – 0.3 to AVREF1 + 0.3
V
Output voltage
VO
–0.3 to VDD + 0.3
V
Output low current
I OL
One pin
10
mA
Total for the P00-P07, P30P37, P54-P57, P60-P67, and
P100-P107 pins
50
mA
Total for the P10-P17, P40P47, P50-P53, P70-P77,
P90-P97, PWM0, PWM1,
and TX pins
50
mA
One pin
–6
mA
Total for the P00-P07, P30P37, P54-P57, P60-P67, and
P100-P107 pins
–30
mA
Total for the P10-P17, P40P47, P50-P53, P70-P77,
P90-P97, PWM0, PWM1,
and TX pins
–30
mA
–0.3 to VDD + 0.3
V
Output high current
I OH
A/D converter reference input
voltage
AVREF1
Operating ambient temperature
TA
–40 to +85
°C
Storage temperature
Tstg
–65 to +150
°C
Caution Absolute maximum ratings are rated values beyond which physical damage will be caused to
the product; if the rated value of any of the parameters in the above table is exceeded, even
momentarily, the quality of the product may deteriorate. Always use the product within its rated
values.
Remark Unless otherwise stated, the characteristics of a dual-function pin are the same as those of a port pin.
Data Sheet U11681EJ2V0DS00
27
µ PD78P4908
OPERATING CONDITIONS
• Operating ambient temperature (T A): –40 °C to +85 °C
• Power supply voltage and clock cycle time: See Figure 8-1.
• Internal regulator operation selected (REGOFF pin: low level)
Figure 8-1. Power Supply Voltage and Clock Cycle Time
10,000
Clock cycle time tCYK [ns]
4,000
1,000
Guaranteed
operating
range
159
100
79
10
0
1
2
3
4
5
Power supply voltage [V]
6
7
CAPACITANCE (TA = 25 °C, VDD = VSS = 0 V)
Parameter
Symbol
Input capacitance
CI
Output capacitance
CO
I/O capacitance
CIO
28
Conditions
f = 1 MHz
0 V on pins other than measured pins
Data Sheet U11681EJ2V0DS00
MIN.
TYP.
MAX.
Unit
15
pF
15
pF
15
pF
µ PD78P4908
MAIN OSCILLATOR CHARACTERISTICS (T A = –40 °C to +85 °C, VDD = 4.0 to 5.5 V, V SS = 0 V)
Parameter
Oscillator frequency
Symbol
Conditions
fXX
Ceramic or crystal resonator
MIN.
MAX.
Unit
2
12.58
MHz
Caution When using the clock generator, run wires according to the following rules to avoid effects such
as stray capacitance:
• Minimize the wiring length.
• Never cause the wires to cross other signal lines.
• Never cause the wires to run near a line carrying a large varying current.
• The grounding point of the capacitor of the oscillator circuit must always be the same potential
as VSS1. Never connect the capacitor to a ground pattern carrying a large current.
• Never extract a signal from the oscillator.
Remark Connect a 12.582912 or 6.291456 MHz oscillator to operate the internal clock timer with the main clock.
CLOCK OSCILLATOR CHARACTERISTICS (TA = –40 °C to +85 °C, VDD = 4.0 to 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
Oscillator frequency
f XT
Ceramic or crystal resonator
Oscillation settling time
t SXT
VDD = 4.5 to 5.5 V
MIN.
TYP.
MAX.
Unit
32
32.768
35
kHz
1.2
2
s
10
s
Oscillation hold voltage
VDDXT
4.0
5.5
V
Watch timer operating
voltage
VDDW
4.0
5.5
V
Data Sheet U11681EJ2V0DS00
29
µ PD78P4908
DC CHARACTERISTICS (TA = –40 °C to +85 °C, VDD = AV DD = 4.0 to 5.5 V, V SS = AVSS = 0 V) (1/2)
Parameter
Input low
voltageNote 5
Input high voltage
Output low voltage
Output high voltage
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VIL1
For pins other than those described in
Notes 1 and 2
–0.3
0.3 VDD
V
VIL2
For pins described in Note 1
–0.3
0.2 VDD
V
VIL3
VDD = 4.5 to 5.5 V
For pins described in Note 2
–0.3
+0.8
V
VIH1
For pins other than those described in
Notes 1 and 2
0.7 VDD
VDD + 0.3
V
VIH2
For pins described in Note 1
0.8 VDD
VDD + 0.3
V
VIH3
VDD = 4.5 to 5.5 V
For pins described in Note 2
2.2
VDD + 0.3
V
VOL1
I OL = 20 µ A
0.1
V
I OL = 100 µ A
0.2
V
I OL = 2 mA
0.4
V
VOL2
I OL = 8 mA
For pins described in Note 4
VDD = 4.5 to 5.5 V
1.0
V
VOH1
I OH = -20 µ A
VDD – 0.1
V
I OH = -100 µA
VDD – 0.2
V
I OH = -2 mA
VDD – 1.0
V
VDD = 4.5 to 5.5 V
I OH = -5 mA
For pins described in Note 3
VDD – 2.4
V
VOH2
Notes 1. X1, X2, RESET, P12/ASCK2/SCK2, P20/NMI, P21/INTP0, P22/INTP1, P23/INTP2/CI, P24/INTP3,
P25/INTP4/ASCK/SCK1, P26/INTP5, P27/SI0, P32/SCK0, P33/SO0, P105/SCK3, P106/SI3,
P107/SO3, XT1, XT2
2. P40/AD0-P47/AD7, P50/A8-P57/A15, P60/A16-P67/REFRQ/HLDAK, P00-P07
3. P00-P07
4. P10-P17, P40/AD0-P47/AD7, P50/A8-P57/A15
5. Other than pull-up resistors
30
Data Sheet U11681EJ2V0DS00
µ PD78P4908
DC CHARACTERISTICS (TA = –40 °C to +85 °C, VDD = AVDD = 4.0 to 5.5 V, VSS = AVSS = 0 V) (2/2)
Parameter
Input leakage current
Conditions
Symbol
I LI1
0 V ≤ V I ≤ VDD
I LI2
Output leakage current
VDD supply
current Note
I LO
0 V ≤ V O ≤ VDD
I DD1
Operation mode
I DD2
I DD3
Pull-up resistor
RL
HALT mode
IDLE mode
MIN.
TYP.
MAX.
Unit
For pins other than
X1 and XT1
±10
µA
X1, XT1
±20
µA
±10
µA
f XX = 12.58 MHz
VDD = 4.5 to 5.5 V
f XX = 6.29 MHz
VDD = 4.0 to 5.5 V
20
40
mA
10
20
mA
f XX = 12.58 MHz
VDD = 4.5 to 5.5 V
f CLK = fXX/8
(STBC = B1H)
Peripheral operation
stops.
5.2
10.4
mA
f XX = 6.29 MHz
VDD = 4.0 to 5.5 V
f CLK = fXX/8
(STBC = 31H)
Peripheral operation
stops.
2.6
5.2
mA
f XX = 12.58 MHz
VDD = 4.5 to 5.5 V
f XX = 6.29 MHz
VDD = 4.0 to 5.5 V
2.4
4.8
mA
1.8
3.6
mA
80
kΩ
15
VI = 0 V
Note These values are valid when the internal regulator is ON (REGOFF pin = low level). They do not include
the AV DD and AVREF1 currents.
Data Sheet U11681EJ2V0DS00
31
µ PD78P4908
AC CHARACTERISTICS (TA = –40 °C to +85°C, VDD = AV DD = 4.0 to 5.5 V, AVSS = VSS = 0 V)
(1) Read/write operation
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Address setup time
(to ASTB↓)
t SAST
VDD = 5.0 V
(0.5 + a)T – 11
29
ns
ASTB high-level width
t WSTH
VDD = 5.0 V
(0.5 + a)T – 17
23
ns
Address hold time (to ASTB↓)
t HSTLA
VDD = 5.0 V
0.5T – 19
21
ns
Address hold time (to RD↑)
t HRA
VDD = 5.0 V
0.5T – 14
26
ns
Delay from address to RD↓
t DAR
VDD = 5.0 V
(1 + a)T – 5
74
ns
Address float time (to RD↓)
t FRA
0
ns
Delay from address to data
input
t DAID
VDD = 5.0 V
(2.5 + a + n)T – 37
400
ns
Delay from ASTB↓ to data input t DSTID
VDD = 5.0 V
(2 + n)T – 35
283
ns
Delay from RD↓ to data input
t DRID
VDD = 5.0 V
(1.5 + n)T – 40
238
ns
Delay from ASTB↓ to RD↓
t DSTR
VDD = 5.0 V
0.5T – 9
Data hold time (to RD↑)
t HRID
Delay from RD↑ to address
active
t DRA
VDD = 5.0 V
Delay from RD↑ to ASTB↑
t DRST
RD low-level width
31
ns
0
ns
0.5T – 2
38
ns
VDD = 5.0 V
0.5T – 9
31
ns
t WRL
VDD = 5.0 V
(1.5 + n)T – 25
94
ns
Delay from address↓ to WR↓
t DAW
VDD = 5.0 V
(1 + a)T – 5
74
ns
Address hold time (to WR↑)
t HWA
VDD = 5.0 V
0.5T – 14
26
ns
Delay from ASTB↓ to data
output
t DSTOD
VDD = 5.0 V
0.5T + 15
Delay from WR↓ to data output t DWOD
55
ns
15
ns
Delay from ASTB↓ to WR↓
t DSTW
VDD = 5.0 V
0.5T – 9
31
ns
Data setup time (to WR↑)
t SODWR
VDD = 5.0 V
(1.5 + n)T – 20
99
ns
Data hold time (to WR↑)
t HWOD
VDD = 5.0 V
0.5T – 14
26
ns
Delay from WR↑ to ASTB↑
t DWST
VDD = 5.0 V
0.5T – 9
31
ns
WR low-level width
t WWL
VDD = 5.0 V
(1.5 + n)T – 25
94
ns
Remark T:
32
tCYK (system clock cycle time) VDD = 5.0 V T = 79 ns (MIN.)
a:
1 during address wait, otherwise, 0
n:
Number of wait states (n ≥ 0)
Data Sheet U11681EJ2V0DS00
µ PD78P4908
(2) External wait timing
Parameter
Symbol
Conditions
Delay from address to WAIT↓ t DAWT
input
VDD = 5.0 V
(2 + a)T – 40
Delay from ASTB↓ to WAIT↓
input
t DSTWT
VDD = 5.0 V
1.5T – 40
Hold time from ASTB↓ to WAIT t HSTWT
VDD = 5.0 V
(0.5 + n)T + 5
Delay from ASTB↓ to WAIT↑
t DSTWTH
VDD = 5.0 V
(1.5 + n)T – 40
Delay from RD↓ to WAIT↓
input
t DRWTL
VDD = 5.0 V
T – 40
Hold time from RD↓ to WAIT
t HRWT
VDD = 5.0 V
nT + 5
Delay from RD↓ to WAIT↑
MIN.
MAX.
Unit
198
ns
79
ns
ns
124
238
ns
39
ns
ns
84
198
ns
35
ns
t DRWTH
VDD = 5.0 V
(1 + n)T – 40
Delay from WAIT↑ to data
input
t DWTID
VDD = 5.0 V
0.5T – 5
Delay from WAIT↑ to RD↑
t DWTR
VDD = 5.0 V
0.5T
40
ns
Delay from WAIT↑ to WR↑
t DWTW
VDD = 5.0 V
0.5T
40
ns
Delay from WR↓ to WAIT↓
input
t DWWTL
VDD = 5.0 V
T – 40
Hold time from WR↓ to WAIT
t HWWT
VDD = 5.0 V
nT + 5
Delay from WR↓ to WAIT↑
t DWWTH
VDD = 5.0 V
(1 + n)T – 40
Remark T:
39
ns
ns
84
198
ns
tCYK (system clock cycle time) VDD = 5.0 V T = 79 ns (MIN.)
a:
1 during address wait, otherwise, 0
n:
Number of wait states (n ≥ 0)
Data Sheet U11681EJ2V0DS00
33
µ PD78P4908
(3) Bus hold timing
Parameter
Delay from HLDRQ↑ to float
Symbol
Conditions
MIN.
MAX.
Unit
VDD = 5.0 V
(2 + 4 + a + n)T + 50
765
ns
Delay from HLDRQ↑ to HLDAK↑ t DHQHHAH
VDD = 5.0 V
(3 + 4 + a + n)T + 30
825
ns
Delay from float to HLDAK↑
VDD = 5.0 V
T + 30
109
ns
Delay from HLDRQ↓ to HLDAK↓ t DHQLHAL
VDD = 5.0 V
2T + 40
199
ns
Delay from HLDRQ↓ to active
VDD = 5.0 V
T – 20
Remark T:
t FHQC
t DCFHA
t DHAC
ns
59
tCYK (system clock cycle time) VDD = 5.0 V T = 79 ns (MIN.)
a:
1 during address wait, otherwise, 0
n:
Number of wait states (n ≥ 0)
(4) Refresh timing
Parameter
Symbol
Conditions
Random read/write cycle time
t RC
VDD = 5.0 V
3T
REFRQ low-level pulse width
t WRFQL
VDD = 5.0 V
Delay from ASTB↓ to REFRQ
t DSTRFQ
Delay from RD↑ to REFRQ
MIN.
MAX.
Unit
238
ns
1.5T – 25
94
ns
VDD = 5.0 V
0.5T – 9
31
ns
t DRRFQ
VDD = 5.0 V
1.5T – 9
110
ns
Delay from WR↑ to REFRQ
t DWRFQ
VDD = 5.0 V
1.5T – 9
110
ns
Delay from REFRQ↑ to ASTB
t DRFQST
VDD = 5.0 V
0.5T – 9
31
ns
REFRQ high-level pulse width
t WRFQH
VDD = 5.0 V
1.5T – 25
94
ns
Remark T: tCYK (system clock cycle time) VDD = 5.0 V T = 79 ns (MIN.)
34
Data Sheet U11681EJ2V0DS00
µ PD78P4908
SERIAL OPERATION (TA = –40 °C to +85 °C, VDD = 4.0 to 5.5 V, AVSS = VSS = 0 V)
(1) CSI, CSI3
Parameter
Symbol
Serial clock cycle time
(SCK0, SCK3)
t CYSK0
Conditions
Input
Output
Serial clock low-level width
(SCK0, SCK3)
t WSKL0
Input
Output
Serial clock high-level width
(SCK0, SCK3)
t WSKH0
Input
Output
Setup time for SI0, SI3
(to SCK0, SCK3↑)
t SSSK0
Hold time for SI0, SI3
(to SCK0, SCK3↑)
t HSSK0
Output delay time for SO0,
SO3 (to SCK0, SCK3↓)
t DSBSK1
t DSBSK2
Output hold time for SO0,
SO3 (to SCK0, SCK3↑)
t HSBSK
MIN.
MAX.
Unit
f CLK = fXX
8/f XX
ns
Other than f CLK = fXX
4/f CLK
ns
Other than f CLK = fXX/8
8/f XX
ns
f CLK = fXX/8
16/fXX
ns
f CLK = fXX
4/f XX – 40
ns
Other than f CLK = fXX
2/f CLK – 40
Other than f CLK = fXX/8
4/f XX – 40
f CLK = fXX/8
8/f XX – 40
f CLK = fXX
4/f XX – 40
Other than f CLK = fXX
2/f CLK – 40
Other than f CLK = fXX/8
4/f XX – 40
f CLK = fXX/8
8/f XX – 40
µs
ns
µs
80
ns
External clock
1/fCLK + 80
ns
Internal clock
80
External clock
0
1/fCLK + 150
ns
Internal clock
0
150
ns
Open-drain output
External clock
0
1/fCLK + 400
ns
R L = 1 kΩ
Internal clock
0
400
ns
CMOS push-pull output
When data is transferred
0.5tCYSK0 – 40
ns
Remarks 1. The values in this table are those when fXX = 12.58 MHz, CL is 100 pF.
2. fCLK :
System clock frequency (selectable from fXX , fXX/2, fXX /4, and fXX/8 by the standby control
3. fXX :
Oscillation frequency (f XX = 12.58 MHz or f XX = 6.29 MHz)
register (STBC))
Data Sheet U11681EJ2V0DS00
35
µ PD78P4908
(2) IOE1, IOE2 (TA = –40 °C to +85 °C, VDD = AV DD = 4.0 to 5.5 V, AVSS = VSS = 0 V)
Parameter
Serial clock cycle time
(SCK1, SCK2)
Serial clock low-level width
(SCK1, SCK2)
Serial clock high-level width
(SCK1, SCK2)
Symbol
t CYSK1
t WSKL1
t WSKH1
Conditions
Input
VDD = 4.5 to 5.5 V
Output
Internal, divided by 8
Input
VDD = 4.5 to 5.5 V
Output
Internal, divided by 8
Input
VDD = 4.5 to 5.5 V
Output
Internal, divided by 8
MIN.
MAX.
Unit
640
ns
1,280
ns
T
ns
280
ns
600
ns
0.5T – 40
ns
280
ns
600
ns
0.5T – 40
ns
Setup time for SI1 and SI2
(to SCK1, SCK2↑)
t SSSK1
40
ns
Hold time for SI1 and SI2
(to SCK1, SCK2↑)
t HSSK1
40
ns
Output delay time for SO1 and t DSOSK
SO2 (to SCK1, SCK2↓)
0
Output hold time for SO1 and
SO2 (to SCK1, SCK2↑)
t HSOSK
When data is transferred
50
ns
ns
0.5t CYSK1 – 40
Remarks 1. The values in this table are those when CL is 100 pF.
2. T: Serial clock cycle set by software. The minimum value is 8/fXX .
(3) UART, UART2 (TA = –40 °C to +85 °C, VDD = AVDD = 4.0 to 5.5 V, AVSS = VSS = 0 V)
Parameter
ASCK clock input cycle time
ASCK clock low-level width
ASCK clock high-level width
36
Symbol
t CYASK
t WASKL
t WASKH
Conditions
VDD = 4.5 to 5.5 V
VDD = 4.5 to 5.5 V
VDD = 4.5 to 5.5 V
Data Sheet U11681EJ2V0DS00
MIN.
MAX.
Unit
160
ns
320
ns
65
ns
120
ns
65
ns
120
ns
µ PD78P4908
CLOCK OUTPUT OPERATION (TA = –40 °C to +85°C, VDD = AVDD = 4.0 to 5.5 V, AVSS = VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
32,000
ns
CLKOUT cycle time
t CYCL
nT
79
CLKOUT low-level width
t CLL
VDD = 4.5 to 5.5 V, 0.5T – 10
30
ns
0.5T – 20
20
ns
VDD = 4.5 to 5.5 V, 0.5T – 10
30
ns
0.5T – 20
20
ns
CLKOUT high-level width
CLKOUT rise time
t CLR
CLKOUT fall time
Remark n:
T:
t CLH
t CLF
4.5 V ≤ VDD < 5.5 V
10
ns
4.0 V ≤ VDD < 4.5 V
20
ns
4.5 V ≤ VDD < 5.5 V
10
ns
4.0 V ≤ VDD < 4.5 V
20
ns
MAX.
Unit
Dividing ratio set by software in the CPU (n = 1, 2, 4, 8, and 16)
tCYK (system clock cycle time)
OTHER OPERATIONS (TA = –40 °C to +85 °C, VDD = AVDD = 4.0 to 5.5 V, AVSS = VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
NMI low-level width
t WNIL
10
µs
NMI high-level width
t WNIH
10
µs
INTP0 low-level width
t WIT0L
4 tCYSMP
ns
INTP0 high-level width
t WIT0H
4 tCYSMP
ns
Low-level width for INTP1INTP3 and CI
t WIT1L
4 t CYCPU
ns
High-level width for INTP1INTP3 and CI
t WIT1H
4 t CYCPU
ns
Low-level width for INTP4 and t WIT2L
INTP5
10
µs
High-level width for INTP4 and t WIT2H
INTP5
10
µs
RESET low-level widthNote
t WRSL
10
µs
RESET high-level width
t WRSH
10
µs
Note Use the RESET low-level width to ensure the lapse of the oscillation settling time when the power is applied.
Remark tCYSMP : Sampling clock set by software
tCYCPU: CPU operation clock set by software in the CPU
Data Sheet U11681EJ2V0DS00
37
µ PD78P4908
A/D CONVERTER CHARACTERISTICS (TA = –40 °C to +85 °C, VDD = AVDD = AVREF1 = 4.0 to 5.5 V, AV SS = VSS = 0 V)
Symbol
Parameter
Conditions
Resolution
MIN.
TYP.
MAX.
8
Total errorNote
IEAD = 00H
IEAD = 01H
bit
FR = 0
0.6
%
FR = 1
1.5
%
2.2
%
±1/2
LSB
VDD = 4.5 to 5.5 V
1
Quantization error
Conversion time
tCONV
Sampling time
tSAMP
Unit
FR = 1 120/f CLK
9.5
480
µs
FR = 0 240/f CLK
19.1
960
µs
FR = 1 18/f CLK
1.4
72
µs
FR = 0 36/f CLK
2.9
144
µs
Analog input impedance
RAN
AVREF1 impedance
RREF1
AVDD power supply
voltage
AIDD1
CS = 1
2.0
5.0
mA
AIDD2
CS = 0, STOP mode
1.0
20
µA
3
1,000
MΩ
10
kΩ
Note Quantization error is not included. This parameter is indicated as the ratio to the full-scale value.
Caution To execute the conversion by the A/D converter set port 7, multiplexed with the A/D input lines,
to output mode to prevent data from being inverted.
Remark fCLK: System clock frequency (selectable from fXX , fXX/2, fXX/4, and f XX/8 by the standby control register
(STBC))
IEBus CONTROLLER CHARACTERISTICS (TA = –40°C to +85°C, VDD = AVDD = AVREF1 = 4.5 to 5.5 V, AVSS = VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
6.20
6.29
6.39
MHz
1.5
µs
IEBus standard
frequencyNote 1
fS
Transfer speed: mode 1
Driver delay time (delay from
TX output to bus line)Note 2
tDTX
CL = 50 pFNote 3
Receiver delay time
(delay from bus line to
RX output)Note 2
tDRX
0.7
µs
Transmission delay on
busNote 2
tDBUS
0.85
µs
Notes 1. The value conforms to the IEBus standard. The IEBus controller is operable within the range of the
oscillator frequency of oscillator characteristics.
2. The value is measured when IEBus system clock: fX = 6.29 MHz.
3. CL is the load capacitance of TX output line.
38
Data Sheet U11681EJ2V0DS00
µ PD78P4908
DATA RETENTION CHARACTERISTICS (TA = –40 °C to +85 °C)
Parameter
Symbol
Conditions
Data retention voltage
VDDDR
STOP mode
Data retention current
I DDDR
STOP mode
MIN.
TYP.
2.5
MAX.
Unit
5.5
V
VDDDR = 2.5 V, AVREF =
0 V Note 1
2
10
µA
VDDDR = 4.0 to 5.5 V,
AVREF1 = 0 V Note 1
10
50
µA
VDD rise time
t RVD
200
µs
VDD fall time
t FVD
200
µs
VDD hold time
(to STOP mode setting)
t HVD
0
ms
STOP clear signal input time
t DREL
0
ms
Oscillation settling time
t WAIT
Crystal resonator
30
ms
Ceramic resonator
5
0.1 VDDDR
ms
pins Note 2
0
VDDDR
V
Input low voltage
VIL
Input high voltage
VIH
Specific
0.9 V DDDR
V
Notes 1. Valid when input voltages to the pins described in Note 2 satisfy VIL or VIH in the above table.
2. RESET, P12/ASCK2/SCK2, P20/NMI, P21/INTP0, P22/INTP1, P23/INTP2/CI, P24/INTP3,
P25/INTP4/ASCK/SCK1, P26/INTP5, P27/SI0, P32/SCK0, P33/SO0, P105/SCK3, P106/SI3, and
P107/SO3 pins
AC TIMING TEST POINTS
VDD – 1 V
0.8 VDD or 2.2 V
0.8 VDD or 2.2 V
Test points
0.45 V
0.8 V
0.8 V
Data Sheet U11681EJ2V0DS00
39
µ PD78P4908
TIMING WAVEFORM
(1) Read operation
tWSTH
ASTB
tSAST
tDRST
tDSTID
tHSTLA
A8-A19
tDAID
tHRA
AD0-AD7
tDSTR
tFRA
tDAR
tHRID
tDRID
tDRA
RD
tWRL
(2) Write operation
tWSTH
ASTB
tSAST
tDWST
tDSTOD
tHSTLA
A8-A19
tHWA
AD0-AD7
tDSTW
tDAW
tHWOD
tDWOD
tSODWR
WR
tWWL
40
Data Sheet U11681EJ2V0DS00
µ PD78P4908
HOLD TIMING
ASTB, A8-A19,
AD0-AD7, RD, WR
tFHQC
tDCFHA
tDHAC
HLDRQ
tDHQLHAL
tDHQHHAH
HLDAK
EXTERNAL WAIT SIGNAL INPUT TIMING
(1) Read operation
ASTB
tDSTWT
tDSTWTH
tHSTWTH
A8-A19
AD0-AD7
tDAWT
tDWTID
RD
tDWTR
tDRWTL
WAIT
tHRWT
tDRWTH
(2) Write operation
ASTB
tDSTWT
tDSTWTH
tHSTWTH
A8-A19
AD0-AD7
tDAWT
WR
tDWTW
tDWWTL
WAIT
tHWWT
tDWWTH
Data Sheet U11681EJ2V0DS00
41
µ PD78P4908
REFRESH TIMING WAVEFORM
(1) Random read/write cycle
tRC
ASTB
WR
tRC
tRC
tRC
tRC
RD
(2) When refresh memory is accessed for a read and write at the same time
ASTB
RD, WR
tDSTRFQ
tDRFQST
tWRFQH
REFRQ
tWRFQL
(3) Refresh after a read
ASTB
tDRFQST
RD
tDRRFQ
REFRQ
tWRFQL
(4) Refresh after a write
ASTB
tDRFQST
WR
tDWRFQ
REFRQ
tWRFQL
42
Data Sheet U11681EJ2V0DS00
µ PD78P4908
SERIAL OPERATION (CSI, CSI3)
tWSKL0
tWSKH0
SCK0, SCK3
tSSSK0 tHSSK0
tCYSK0
SI0, SI3
Input data
tDSBSK1
SO0, SO3
tHSBSK1
Output data
SERIAL OPERATION (IOE1, IOE2)
tWSKL1
tWSKH1
SCK1, SCK2
tSSSK1
tCYSK1
SI1, SI2
tHSSK1
Input data
tHSOSK
tDSOSK
SO1, SO2
Output data
SERIAL OPERATION (UART, UART2)
tWASKH
tWASKL
ASCK,
ASCK2
tCYASK
CLOCK OUTPUT TIMING
tCLH
tCLL
CLKOUT
tCLR
tCLF
tCYCL
Data Sheet U11681EJ2V0DS00
43
µ PD78P4908
INTERRUPT REQUEST INPUT TIMING
tWNIH
tWNIL
tWIT0H
tWIT0L
tWIT1H
tWIT1L
tWIT2H
tWIT2L
tWRSH
tWRSL
NMI
INTP0
CI,
INTP1-INTP3
INTP4, INTP5
RESET INPUT TIMING
RESET
44
Data Sheet U11681EJ2V0DS00
µ PD78P4908
EXTERNAL CLOCK TIMING
tWXH
tWXL
X1
tXR
tXF
tCYX
DATA RETENTION CHARACTERISTICS
STOP mode setting
VDD
VDDDR
tHVD
tFVD
tRVD
tDREL
tWAIT
RESET
NMI
(Clearing by falling edge)
NMI
(Clearing by rising edge)
Data Sheet U11681EJ2V0DS00
45
µ PD78P4908
DC PROGRAMMING CHARACTERISTICS (TA = 25 °C ±5°C, VSS = 0 V)
Symbol
SymbolNote 1
High-level input
voltage
VIH
VIH
Low-level input
voltage
VIL
VIL
Input leakage current
I LIP
I LI
Parameter
Conditions
MIN.
TYP.
MAX.
Unit
2.2
VDDP + 0.3
V
–0.3
+0.8
V
±10
µA
0 ≤ V I ≤ VDDP Note 2
High-level output
voltage
V OH
VOH
I OH = –400 µA
Low-level output
voltage
VOL
VOL
I OL = 2.1 mA
0.45
V
Output leakage
current
I LO
–
0 ≤ V O ≤ VDDP , OE = V IH
±10
µA
VDDP
VCC
VDDP supply voltage
VPP supply voltage
VPP
VPP
2.4
Program memory write mode
6.25
6.5
6.75
V
Program memory read mode
4.5
5.0
5.5
V
Program memory write mode
12.2
12.5
12.8
V
Program memory read mode
VDDP supply current
VPP supply current
I DD
I PP
I DD
I PP
VPP = VDDP
V
Program memory write mode
10
40
mA
Program memory read mode
10
40
mA
Program memory write mode
5
50
mA
Program memory read mode
1.0
100
µA
Notes 1. Symbols for the corresponding µPD27C1001A
2. The VDDP represents the VDD pin as viewed in the programming mode.
46
V
Data Sheet U11681EJ2V0DS00
µ PD78P4908
AC PROGRAMMING CHARACTERISTICS (TA = 25°C ±5°C, VSS = 0 V)
PROM Write Mode (Page Program Mode)
Parameter
SymbolNote 1
Conditions
MIN.
TYP.
MAX.
Unit
Address setup time
t AS
2
µs
CE set time
t CES
2
µs
Input data setup time
t DS
2
µs
Address hold time
t AH
2
µs
t AHL
2
µs
t AHV
0
µs
Input data hold time
tDH
2
µs
Output data hold time
t DF
0
VPP setup time
tVPS
2
µs
VDDP setup time
t VDSNote 2
2
µs
Initial program pulse width
tPW
0.095
OE set time
t OES
2
Valid data delay time from OE
tOE
OE pulse width in the data latch
t LW
1
µs
PGM setup time
t PGMS
2
µs
CE hold time
t CEH
2
µs
OE hold time
t OEH
2
µs
130
0.1
0.105
ns
ms
µs
1
2
ns
Notes 1. These symbols (except tVDS) correspond to those of the corresponding µ PD27C1001A.
2. For µPD27C1001A, read tVDS as tVCS .
Data Sheet U11681EJ2V0DS00
47
µ PD78P4908
PROM Write Mode (Byte Program Mode)
Parameter
Symbol Note 1
Conditions
MIN.
TYP.
MAX.
Unit
Address setup time
tAS
2
µs
CE set time
t CES
2
µs
Input data setup time
t DS
2
µs
Address hold time
t AH
2
µs
Input data hold time
t DH
2
µs
Output data hold time
tDF
0
VPP setup time
t VPS
2
µs
VDDP setup time
tVDSNote 2
2
µs
Initial program pulse width
t PW
0.095
OE set time
tOES
2
Valid data delay time from OE
t OE
130
0.1
0.105
ns
ms
µs
1
2
ns
Notes 1. These symbols (except tVDS) correspond to those of the corresponding µ PD27C1001A.
2. For µPD27C1001A, read tVDS as tVCS .
PROM Read Mode
Parameter
Symbol Note 1
Conditions
MIN.
TYP.
MAX.
Unit
200
ns
Data output time from address
t ACC
CE = OE = V IL
Delay from CE ↓ to data output
tCE
OE = VIL
1
2
µs
Delay from OE ↓ to data output
t OE
CE = VIL
1
2
µs
Data hold time to OE↑ or CE↑ Note 2
t DF
CE = VIL or OE = V IL
0
60
ns
Data hold time to address
t OH
CE = OE = V IL
0
Notes 1. These symbols correspond to those of the corresponding µ PD27C1001A.
2. tDF is the time measured from when either OE or CE reaches VIH, whichever is faster.
48
Data Sheet U11681EJ2V0DS00
ns
µ PD78P4908
PROM Write Mode Timing (Page Program Mode)
Page data latch
Page program
Program verify
A2-A16
tAS
tAHL
tDS
tDH
tAHV
A0, A1
D0-D7
Hi-Z
tDF
Hi-Z
tVPS
Data input
Hi-Z
tPGMS
tOE
Data
output
tAH
VPP
VPP
VDDP
tVDS
VDDP + 1.5
VDDP
VDDP
tCES
tOEH
VIH
CE
VIL
tCEH
tPW
VIH
PGM
VIL
VIH
tOES
tLW
OE
VIL
Data Sheet U11681EJ2V0DS00
49
µ PD78P4908
PROM Write Mode Timing (Byte Program Mode)
Program
Program verify
A0-A16
tAS
D0-D7
Hi-Z
tDS
tDF
Hi-Z
Data input
tDS
Hi-Z
Data output
tDH
tAH
VPP
VPP
VDDP
tVPS
VDDP + 1.5
VDDP
VDDP
tVDS
VIH
CE
VIL
tCES
tPW
VIH
PGM
VIL
tOES
tOE
VIH
OE
VIL
Cautions 1. V DDP must be applied before VPP, and must be cut after VPP.
2. VPP including overshoot must not exceed 13.5 V.
3. Plugging in or out the board with the VPP pin supplied with 12.5 V may adversely affect its
reliability.
PROM Read Mode Timing
Valid address
A0-A16
CE
tCE
OE
tDFNote 2
tACCNote 1
D0-D7
Hi-Z
tOENote 1
tOH
Data output
Hi-Z
Notes 1. For reading within tACC, the delay of the OE input from falling edge of CE must be within t ACC-tOE.
2. tDF is the time measured from when either OE or CE reaches VIH, whichever is faster.
50
Data Sheet U11681EJ2V0DS00
µ PD78P4908
9. PACKAGE DRAWING
100PIN PLASTIC QFP (14x20)
A
B
51
50
80
81
detail of lead end
C D
S
R
Q
31
30
100
1
F
J
G
H
I
P
M
K
M
N
L
NOTE
Each lead centerline is located within 0.15 mm (0.006 inch) of
its true position (T.P.) at maximum material condition.
Remark The shape and material of the ES version are the same
as those of the corresponding mass-produced product.
ITEM
A
MILLIMETERS
23.6±0.4
INCHES
0.929±0.016
B
20.0±0.2
0.795 +0.009
–0.008
C
14.0±0.2
0.551 +0.009
–0.008
D
17.6±0.4
0.693±0.016
F
0.8
0.031
G
0.6
0.024
H
0.30±0.10
0.012 +0.004
–0.005
I
0.15
0.006
J
0.65 (T.P.)
0.026 (T.P.)
K
1.8±0.2
0.071 +0.008
–0.009
L
0.8±0.2
0.031 +0.009
–0.008
M
0.15 +0.10
–0.05
0.006 +0.004
–0.003
N
0.10
0.004
P
2.7±0.1
0.106 +0.005
–0.004
Q
0.1±0.1
0.004±0.004
R
5°±5°
5°±5°
S
3.0 MAX.
0.119 MAX.
P100GF-65-3BA1-3
Data Sheet U11681EJ2V0DS00
51
µ PD78P4908
10. RECOMMENDED SOLDERING CONDITIONS
The conditions listed below shall be met when soldering the µPD78P4908.
For details of the recommended soldering conditions, refer to our document Semiconductor Device Mounting
Technology Manual (C10535E).
Please consult with our sales offices in case any other soldering process is used, or in case soldering is done under
different conditions.
Table 10-1. Soldering Conditions for Surface-Mount Devices
µ PD78P4908GF-3BA: 100-pin plastic QFP (14 × 20 mm)
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package's surface temperature: 235°C
Reflow time: 30 seconds or less (210°C or more)
Maximum allowable number of reflow processes: 2
Exposure limit: 7 days Note (20 hours of pre-baking is required at 125°C
afterward)
IR35-207-2
VPS
Peak package's surface temperature: 215°C
Reflow time: 40 seconds or less (200°C or more)
Maximum allowable number of reflow processes: 2
Exposure limit: 7 days Note (20 hours of pre-baking is required at 125°C
afterward)
VP15-207-2
Wave soldering
Solder temperature: 260°C or less
Flow time: 10 seconds or less
Number of flow processes: 1
WS60-207-1
Preheating temperature: 120°C MAX. (measured on the package
surface)
Exposure limit: 7 days Note (20 hours of pre-baking is required at 125°C
afterward)
Partial heating method
Terminal temperature: 300°C or less
Heat time: 3 seconds or less (for one side of a device)
–
Note Maximum number of days during which the product can be stored at a temperature of 25°C and a relative
humidity of 65% or less after dry-pack package is opened.
Caution Do not apply two or more different soldering methods to one chip (except for partial heating
method for terminal sections).
52
Data Sheet U11681EJ2V0DS00
µ PD78P4908
APPENDIX A DEVELOPMENT TOOLS
The following development tools are available for system development using the µ PD78P4908.
See also (5) Notes on using development tools.
(1) Language processing software
RA78K4
Assembler package for all 78K/IV series models
CC78K4
C compiler package for all 78K/IV series models
DF784908
Device file for µPD784908 subseries models
CC78K4-L
C compiler library source file for all 78K/IV series models
(2) PROM write tools
PG-1500
PROM programmer
PA-78P4908GF
Programmer adapter, connects to PG-1500
PG-1500 controller
Control program for PG-1500
(3) Debugging tools
• When using the in-circuit emulator IE-78K4-NS
IE-78K4-NS
In-circuit emulator for all 78K/IV series models
IE-70000-MC-PS-B
Power supply unit for IE-78K4-NS
IE-70000-98-IF-C
Interface adapter when the PC-9800 series computer (other than a notebook)
is used as the host machine (C bus compatible)
IE-70000-CD-IF-A
PC card and interface cable when a notebook is used as the host machine
(PCMCIA socket compatible)
IE-70000-PC-IF-C
Interface adapter when the IBM PC/ATTM compatible is used as the host
machine (ISA compatible)
IE-7000-PCI-IF
Adapter when a computer with a PCI bus as the host machine
IE-784908-NS-EM1Note
Emulation board for evaluating µPD784908 subseries models
NP-100GFNote
Emulation probe for 100-pin plastic QFP (GF-3BA type)
EV-9200GF-100
Socket for mounting on target system board made for 100-pin plastic QFP
(GF-3BA type). Used in LCC mode.
ID78K4-NS
Integrated debugger for IE-78K4-NS
SM78K4
System simulator for all 78K/IV series models
DF784908
Device file for µPD784908 subseries models
Note Under development
Data Sheet U11681EJ2V0DS00
53
µ PD78P4908
• When using the in-circuit emulator IE-784000-R
IE-784000-R
In-circuit emulator for all 78K/IV series models
IE-70000-98-IF-C
Interface adapter when the PC-9800 series computer (other than a notebook)
is used as the host machine (C bus compatible)
IE-70000-PC-IF-C
Interface adapter when the IBM PC/AT compatible is used as the host
machine (ISA bus compatible)
IE-7000-PCI-IF
Adapter when a computer with a PCI bus as the host machine
IE-78000-R-SV3
Interface adapter and cable when the EWS is used as the host machine
IE-784908-NS-EM1
IE-784908-R-EM1
Emulation board for evaluating µPD784908 subseries models
IE-784000-R-EM
Emulation board for all 78K/IV series models
IE-78K4-R-EX2
Conversion board for emulation probes required to use the IE-784908-NSEM1 on the IE-784000-R. The board is not needed when the conventional
product IE-784908-R-EM1 is used.
EP-78064-GF-R
Emulation probe for 100-pin plastic QFP (GF-3BA type)
EV-9200GF-100
Socket for mounting on target system board made for 100-pin plastic QFP
(GF-3BA type)
ID78K4
Integrated debugger for IE-784000-R
SM78K4
System simulator for all 78K/IV series models
DF784908
Device file for µPD784908 subseries models
(4) Real-time OS
RX78K/IV
Real-time OS for 78K/IV series models
MX78K4
OS for 78K/IV series models
54
Data Sheet U11681EJ2V0DS00
µ PD78P4908
(5) Notes when using development tools
• The ID78K4-NS, ID78K4, and SM78K4 can be used in combination with the DF784908.
• The CC78K4 and RX78K/IV can be used in combination with the RA78K4 and DF784908.
• The NP-100GF is a product from Naito Densei Machida Mfg. Co., Ltd. (044-822-3813). Consult the NEC sales
representative for purchasing.
• The host machines and operating systems corresponding to each software are shown below.
Host machine
[OS]
PC
PC-9800 series [WindowsTM]
IBM PC/AT compatibles [Windows]
Software
RA78K4
Note
CC78K4
Note
PG-1500 controller
Note
EWS
HP9000 series 700TM [HP-UXTM]
SPARCstationTM [SunOSTM, Solaris TM]
NEWSTM (RISC) [NEWS-OSTM]
ID78K4-NS
–
–
ID78K4
SM78K4
–
RX78K/IV
Note
MX78K4
Note
Note Software under MS-DOS
Data Sheet U11681EJ2V0DS00
55
µ PD78P4908
APPENDIX B CONVERSION SOCKET (EV-9200GF-100) PACKAGE DRAWING
Connect the µ PD78P4908GF-3BA (100-pin plastic QFP (14 × 20 mm)) to the circuit board in combination with the
EV-9200GF-100.
Figure B-1. Package Drawings of EV-9200GF-100 (Reference)
A
B
E
M
N
O
L
K
S
J
D
C
R
F
EV-9200GF-100
Q
1
No.1 pin index
P
G
H
I
EV-9200GF-100-G0
ITEM
56
MILLIMETERS
INCHES
A
24.6
0.969
B
21
0.827
C
15
0.591
D
18.6
0.732
E
4-C 2
4-C 0.079
F
0.8
0.031
G
12.0
0.472
H
22.6
0.89
I
25.3
0.996
J
6.0
0.236
K
16.6
0.654
L
19.3
076
M
8.2
0.323
N
8.0
0.315
O
2.5
0.098
0.079
P
2.0
Q
0.35
0.014
R
φ 2.3
φ 0.091
S
φ 1.5
φ 0.059
Data Sheet U11681EJ2V0DS00
µ PD78P4908
Figure B-2. Recommended Pattern to Mount EV-9200GF-100 on a Substrate (Reference)
G
J
H
D
F
E
K
I
L
C
B
A
EV-9200GF-100-P1E
ITEM
MILLIMETERS
INCHES
A
26.3
1.035
B
21.6
0.85
C
+0.002
0.65±0.02 × 29=18.85±0.05 0.026 +0.001
–0.002 × 1.142=0.742 –0.002
D
+0.003
0.65±0.02 × 19=12.35±0.05 0.026 +0.001
–0.002 × 0.748=0.486 –0.002
E
15.6
0.614
F
20.3
0.799
G
12 ± 0.05
0.472 +0.003
–0.002
H
6 ± 0.05
0.236 +0.003
–0.002
I
0.35 ± 0.02
0.014 +0.001
–0.001
J
φ 2.36 ± 0.03
φ 0.093+0.001
–0.002
K
φ 2.3
φ 0.091
L
φ 1.57 ± 0.03
φ 0.062+0.001
–0.002
Caution
Dimensions of mount pad for EV-9200 and that for target
device (QFP) may be different in some parts. For the
recommended mount pad dimensions for QFP, refer to
"SEMICONDUCTOR DEVICE MOUNTING
TECHNOLOGY MANUAL" (C10535E).
Data Sheet U11681EJ2V0DS00
57
µ PD78P4908
APPENDIX C RELATED DOCUMENTS
Documents Related to Devices
Document No.
Document name
Japanese
English
µ PD784907, 784908 Data Sheet
U11680J
U11680E
µ PD78P4908 Data Sheet
U11681J
This document
µ PD784908 Subseries User's Manual – Hardware
U11787J
U11787E
µ PD784908 Subseries Special Function Registers
U11589J
—
78K/IV Series User's Manual – Instruction
U10905J
U10905E
78K/IV Series Instruction Table
U10594J
—
78K/IV Series Instruction Set
U10595J
—
U10095J
U10095E
78K/IV Series Application Note
Software Basic
Documents Related to Development Tools (User's Manual)
Document No.
Document name
Japanese
English
Operation
U11334J
U11334E
Language
U11162J
U11162E
U11743J
U11743E
Operation
U11572J
U11572E
Language
U11571J
U11571E
PG-1500 PROM Programmer
U11940J
U11940E
PG-1500 Controller PC-9800 Series (MS-DOSTM) Base
EEU-704
EEU-1291
PG-1500 Controller IBM PC Series (PC DOS TM) Base
EEU-5008
U10540E
IE-78K4-NS
U13356J
U13356E
IE-784000-R
U12903J
U12903E
IE-784908-R-EM1
U11876J
—
IE-784908-NS-EM1
U13743J
On preparation
EP-78064
EEU-934
EEU-1469
RA78K4 Assembler Package
RA78K Series Structured Assembler Preprocessor
CC78K4 C Compiler
SM78K4 System Simulator Windows Base
Reference
U10093J
U10093E
SM78K Series System Simulator
External Part User Open
Interface Specifications
U10092J
U10092E
ID78K4-NS Integrated Debugger PC Base
Reference
U12796J
U12796E
ID78K4 Integrated Debugger Windows Base
Reference
U10440J
U10440E
ID78K4 Integrated Debugger HP-UX, SunOS, NEWS-OS Base Reference
U11960J
U11960E
Caution The above documents may be revised without notice. Use the latest versions when you design
application systems.
58
Data Sheet U11681EJ2V0DS00
µ PD78P4908
Documents Related to Software to Be Incorporated into the Product (User's Manual)
Document No.
Document name
78K/IV Series Real-Time OS
OS for 78K/IV Series MX78K4
Japanese
English
Fundamental
U10603J
U10603E
Installation
U10604J
U10604E
Debugger
U10364J
—
Fundamental
U11779J
—
Other Documents
Document No.
Document name
Japanese
English
–
C13388E
Semiconductor Device Mounting Technology Manual
C10535J
C10535E
Quality Grades on NEC Semiconductor Device
C11531J
C11531E
NEC Semiconductor Device Reliability/Quality Control System
C10983J
C10983E
Guide to Prevent Damage for Semiconductor Devices by Electrostatic Discharge (ESD)
C11892J
C11892E
—
MEI-1202
U11416J
—
NEC IC Package Manual (CD-ROM)
Guide to Quality Assurance for Semiconductor Devices
Guide for Products Related to Microcomputer: Other Companies
Caution The above documents may be revised without notice. Use the latest versions when you design
application systems.
Data Sheet U11681EJ2V0DS00
59
µ PD78P4908
[MEMO]
60
Data Sheet U11681EJ2V0DS00
µ PD78P4908
[MEMO]
Data Sheet U11681EJ2V0DS00
61
µ PD78P4908
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of
the gate oxide and ultimately degrade the device operation. Steps must be taken
to stop generation of static electricity as much as possible, and quickly dissipate
it once, when it has occurred. Environmental control must be adequate. When
it is dry, humidifier should be used. It is recommended to avoid using insulators
that easily build static electricity. Semiconductor devices must be stored and
transported in an anti-static container, static shielding bag or conductive
material. All test and measurement tools including work bench and floor should
be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to
be taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level
may be generated due to noise, etc., hence causing malfunction. CMOS device
behave differently than Bipolar or NMOS devices. Input levels of CMOS devices
must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have
a possibility of being an output pin. All handling related to the unused pins must
be judged device by device and related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production
process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset function
have not yet been initialized. Hence, power-on does not guarantee out-pin
levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after
power-on for devices having reset function.
62
Data Sheet U11681EJ2V0DS00
µ PD78P4908
Regional Information
Some information contained in this document may vary from country to country. Before using any NEC
product in your application, please contact the NEC office in your country to obtain a list of authorized
representatives and distributors. They will verify:
• Device availability
• Ordering information
• Product release schedule
• Availability of related technical literature
• Development environment specifications (for example, specifications for third-party tools and
components, host computers, power plugs, AC supply voltages, and so forth)
• Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
from country to country.
NEC Electronics Inc. (U.S.)
NEC Electronics (Germany) GmbH
NEC Electronics Hong Kong Ltd.
Santa Clara, California
Tel: 408-588-6000
800-366-9782
Fax: 408-588-6130
800-729-9288
Benelux Office
Eindhoven, The Netherlands
Tel: 040-2445845
Fax: 040-2444580
Hong Kong
Tel: 2886-9318
Fax: 2886-9022/9044
NEC Electronics Hong Kong Ltd.
NEC Electronics (France) S.A.
Velizy-Villacoublay, France
Tel: 01-30-67 58 00
Fax: 01-30-67 58 99
Seoul Branch
Seoul, Korea
Tel: 02-528-0303
Fax: 02-528-4411
NEC Electronics (France) S.A.
NEC Electronics Singapore Pte. Ltd.
Milton Keynes, UK
Tel: 01908-691-133
Fax: 01908-670-290
Spain Office
Madrid, Spain
Tel: 91-504-2787
Fax: 91-504-2860
United Square, Singapore 1130
Tel: 65-253-8311
Fax: 65-250-3583
NEC Electronics Italiana s.r.l.
NEC Electronics (Germany) GmbH
Milano, Italy
Tel: 02-66 75 41
Fax: 02-66 75 42 99
Scandinavia Office
Taeby, Sweden
Tel: 08-63 80 820
Fax: 08-63 80 388
NEC Electronics (Germany) GmbH
Duesseldorf, Germany
Tel: 0211-65 03 02
Fax: 0211-65 03 490
NEC Electronics (UK) Ltd.
NEC Electronics Taiwan Ltd.
Taipei, Taiwan
Tel: 02-2719-2377
Fax: 02-2719-5951
NEC do Brasil S.A.
Electron Devices Division
Rodovia Presidente Dutra, Km 214
07210-902-Guarulhos-SP Brasil
Tel: 55-11-6465-6810
Fax: 55-11-6465-6829
J99.1
Data Sheet U11681EJ2V0DS00
63
µ PD78P4908
IEBus is a trademark of NEC Corporation.
MS-DOS and Windows are either registered trademarks or trademarks of Microsoft Corporation in the United
States and/or other countries.
PC/AT and PC DOS are trademarks of IBM Corporation.
HP9000 series 700 and HP-UX are trademarks of Hewlett-Packard Company.
SPARCstation is a trademark of SPARC International, Inc.
Solaris and SunOS are trademarks of Sun Microsystems, Inc.
NEWS and NEWS-OS are trademarks of SONY Corporation.
Some related documents may be preliminary versions. Note that, however, what documents are preliminary is not indicated
in this document.
The export of this product from Japan is regulated by the Japanese government. To export this product may be prohibited
without governmental license, the need for which must be judged by the customer. The export or re-export of this product
from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5