DATA SHEET MOS INTEGRATED CIRCUIT μPD8821 7300 PIXELS × 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The μ PD8821 is a high-speed and high sensitive color CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal and has the function of color separation. The μ PD8821 has 3 rows of 7300 pixels, and it is a 2-output/color type CCD sensor with 2 rows/color of charge transfer register, which transfers the photo signal electrons of 7300 pixels separately in odd and even pixels. Therefore, it is suitable for 600dpi/A3 high-speed color digital copiers, color scanners and so on by the use of the package with heat sink that has high heat radiation. FEATURES • Valid photocell : 7300 pixels × 3 • Photocell pitch : 10 μ m • Line spacing : 40 μ m (4 lines) Red line-Green line, Green line-Blue line • Color filter : Primary colors (red, green, and blue), pigment filter (with 10 lx•hour tolerant) • Resolution : 24 dot/mm A3 (297 × 420 mm) size (shorter side) • Data rate : 60 MHz MAX. (30 MHz/ch max.) • Output type : 2 outputs in phase/color • Power supply : +10 V • Drive clock level : CMOS output under 5 V operation • On-chip circuits : Reset feed-through level clamp circuit 7 Voltage amplifiers ORDERING INFORMATION Part Number Package μ PD8821CZ-A CCD linear image sensor 40-pin plastic DIP with heat sink (15.24 mm (600)) Remark The μ PD8821CZ-A is a lead-free product. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. S17961EJ2V0DS00 (2nd edition) Date Published July 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006 μ PD8821 BLOCK DIAGRAM VOD 36 VOUT2 37 φ CP φ 2L GND φ 1BO φ 2AO φ 1B φ 2A 35 34 33 32 31 25 26 CCD analog shift register (Blue, even) D140 D129 … 24 D140 S7300 … D129 S7299 Photocell (Blue) S7300 S2 ... S1 D128 D27 Transfer gate 23 φ TG1 Transfer gate VOUT1 38 CCD analog shift register (Blue, odd) GND 39 VOUT3 40 CCD analog shift register (Green, odd) Photocell (Green) S7299 S2 ... S1 D128 D27 Transfer gate φ TG2 Transfer gate VOUT4 CCD analog shift register 1 (Green, even) GND GND 2 VOUT6 3 18 CCD analog shift register (Red, even) … D140 D129 S7300 Photocell (Red) S7299 S2 ... S1 D128 D27 Transfer gate 17 φ TG3 Transfer gate VOUT5 (Red, odd) 4 CCD analog shift register 5 VOD 2 6 7 8 9 10 15 16 φR φ 2L GND φ 2BO φ 1AO φ1A φ2B 11 30 HS-VOD HS-VOD Data Sheet S17961EJ2V0DS μ PD8821 PIN CONFIGURATION (Top View) CCD linear image sensor 40-pin plastic DIP with heat sink (15.24 mm (600)) μ PD8821CZ-A VOUT3 40 Output signal 3 (Green-odd) Ground 2 GND GND 39 Ground Output signal 6 (Red-even) 3 VOUT6 VOUT1 38 Output signal 1 (Blue-odd) Output signal 5 (Red-odd) 4 VOUT5 VOUT2 37 Output signal 2 (Blue-even) Output unit drain voltage 2 5 VOD VOD 36 Output unit drain voltage Reset gate clock 6 φR φ CP 35 Reset feed-through level clamp clock Last stage shift register clock 7 φ 2L φ 2L 34 Last stage shift register clock Ground 8 GND GND 33 Ground Shift register clock 2BO 9 φ 2BO φ 1BO 32 Shift register clock 1BO Shift register clock 1AO 10 φ 1AO φ 2AO 31 Shift register clock 2AO Package Heat-Sink VOD 11 HS-VOD HS-VOD 30 Package Heat-Sink VOD No connection 12 NC NC 29 No connection No connection 13 NC NC 28 No connection No connection 14 NC NC 27 No connection Shift register clock 1A 15 φ 1A φ 2A 26 Shift register clock 2A Shift register clock 2B 16 φ 2B φ 1B 25 Shift register clock 1B Transfer gate clock 3 17 φ TG3 φ TG1 24 Transfer gate clock 1 Ground 18 GND φ TG2 23 Transfer gate clock 2 No connection 19 NC NC 22 No connection No connection 20 NC NC 21 No connection Blue 7300 Green 7300 7300 Red Caution 1 VOUT4 1 1 1 Output signal 4 (Green-even) Pins 11 and 30 (HS-VOD) are connected only to the heat sink. These pins are not connected to VOD (pins 5 or 36) inside this device. Set HS-VOD (pins 11 and 30) to VOD (pins 5 and 36) in common on a board. Each VOD is connected inside this device. PHOTOCELL STRUCTURE DIAGRAM 10 μ m 7 μm 3 μm Channel stopper Aluminum shield Data Sheet S17961EJ2V0DS 3 μ PD8821 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Output drain voltage VOD –0.3 to +12.0 V Heat sink voltage HS-VOD –0.3 to +12.0 V Shift register clock voltage Vφ 1, Vφ 2 –0.3 to +8.0 V Last stage shift register clock voltage Vφ 2L –0.3 to +8.0 V Reset gate clock voltage Vφ R –0.3 to +8.0 V Reset feed-through level clamp clock voltage Vφ CP –0.3 to +8.0 V Transfer gate clock voltage Vφ TG1 to Vφ TG3 –0.3 to +8.0 V Operating ambient temperature Note TA 0 to +60 ˚C Storage temperature Tstg –40 to +100 ˚C Note The operating ambient temperature is defined as an atmosphere temperature in a point 10 mm away on the substrate, and 10 mm away from the short side of package 1 pin. Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit Output drain voltage VOD 9.5 10.0 10.5 V Heat sink voltage HS-VOD 9.5 10.0 10.5 V Shift register clock high level Vφ 1H, Vφ 2H 4.75 5.0 6.0 V Shift register clock low level Vφ 1L, Vφ 2L –0.3 0.0 +0.25 V Last stage shift register clock high level Vφ 2LH 4.75 5.0 6.0 V Last stage shift register clock low level Vφ 2LL –0.3 0.0 +0.25 V Reset gate clock high level Vφ RH 4.75 5.0 5.5 V Reset gate clock low level Vφ RL -0.3 0.0 +0.5 V Reset feed-through level clamp clock high level Vφ CPH 4.75 5.0 6.0 V Reset feed-through level clamp clock low level Vφ CPL –0.3 0.0 +0.5 V Transfer gate clock high level Note Vφ TG1H to Vφ TG3H 4.75 Vφ 1H Vφ 1H V Transfer gate clock low level Vφ TG1L to Vφ TG3L –0.3 0.0 +0.5 V Shift register clock amplitude Vφ 1p-p, Vφ 2p-p 4.75 5.0 6.3 V Last stage shift register clock amplitude Vφ 2Lp-p 4.75 5.0 6.3 V Reset gate clock amplitude Vφ Rp-p 4.75 5.0 6.3 V Reset feed-through level clamp clock amplitude Vφ CPp-p 4.75 5.0 6.3 V Transfer gate clock amplitude Vφ TGp-p 4.5 5.0 6.3 V Data rate 2 × fφ R 0.2 2 60 MHz Note When Transfer gate clock high level (Vφ TGH) is higher than shift register clock high level (Vφ 1H), image lag can increase. 4 Data Sheet S17961EJ2V0DS μ PD8821 ELECTRICAL CHARACTERISTICS TA = +25°C, VOD = +10 V, fφ R = 1 MHz, data rate = 2 MHz, storage time = 10 ms, input clock = 5 Vp-p light source (except Response2): 3200 K halogen lamp + C-500S (infrared cut filter, t = 1 mm)+ HA-50 (heat absorbing filter, t = 3 mm) Parameter Symbol Saturation voltage <R> Test Conditions Vsat Saturation exposure Red SER 3200K+C500S+HA50 MIN. TYP. MAX. Unit 1.2 1.5 – V – 0.15 – lx•s Green SEG – 0.19 – lx•s Blue SEB – 0.35 – lx•s – 6.0 18.0 % Photo response non-uniformity PRNU VOUT = 1 V Average dark signal ADS Light shielding – 1.0 5.0 mV Dark signal non-uniformity DSNU Light shielding – 2.0 10.0 mV Power consumption PW – 640 740 mW Output impedance ZO Response1 Response peak – 0.2 0.4 kΩ 6.86 9.8 12.74 V/lx•s RG 5.53 7.9 10.27 V/lx•s RB Red RR Green Blue 3.01 4.3 5.59 V/lx•s Red – 610 – nm Green – 535 – nm Blue – 460 – nm Image lag IL Offset level VOS Output fall delay time Note 3200K+C500S+HA50 VOUT = 1 V – 1.0 5.0 % 3.5 4.5 5.5 V 6.0 7.0 8.0 ns td t6L = 3 ns Register imbalance RI VOUT = 1 V – 0 4 % Total transfer efficiency TTE VOUT = 1 V, fφ R = 30 MHz 94 98 – % Dynamic range DR1 Vsat/DSNU – 750 – times DR2 Vsat/σ Reset feed-through noise RFTN1 Light shielding RFTN2 Light shielding random noise Note σ dark Bit clamp, t17 > 4 ns – 3000 – times –1000 –200 +500 mV –1000 –200 +500 mV – 0.5 – mV td is defined as period from 10% of φ 2L of VOUT1 to VOUT6, and td is reference data after VOUT1 to VOUT6 pins with FET proving. Data Sheet S17961EJ2V0DS 5 μ PD8821 INPUT PIN CAPACITANCE (TA = +25°C, VOD = +10 V) Parameter Shift register clock pin capacitance Symbol Note Cφ 1 Cφ 2 Pin Pin No MIN. TYP. MAX. Unit φ 1AO 10 235 260 285 pF φ 1BO 32 235 260 285 pF φ 1A 15 235 260 285 pF φ 1B 25 235 260 285 pF φ 2AO 31 235 260 285 pF φ 2BO 9 235 260 285 pF φ 2A 26 235 260 285 pF φ 2B 16 235 260 285 pF 7 4 5 6 pF Last stage shift register clock pin capacitance Cφ 2L φ 2L 34 4 5 6 pF Reset gate clock pin capacitance Cφ R φR 6 11 12 13 pF Reset feed-through level clamp clock pin Cφ CP φ CP 35 13 15 17 pF Cφ TG φ TG1 24 190 210 230 pF capacitance Transfer gate clock pin capacitance Note φ TG2 23 155 170 185 pF φ TG3 17 155 170 185 pF Cφ 1, Cφ 2 are equivalent capacitance with driving device, including the co-capacitance between φ 1 and φ 2. Remark Pins 10, 15, 25 and 32 (φ 1), pins 9, 16, 26 and 31 (φ 2), pins 7 and 34 (φ 2L), are each connected inside of the device. 6 Data Sheet S17961EJ2V0DS Data Sheet S17961EJ2V0DS 25 26 5 6 3 4 1 2 (3 pixels/channel) (3650 pixels/channel) (3 pixels/channel) Invalid photocell 27 28 Valid photocell 29 30 Invalid photocell 31 32 Optical black 119 120 (48 pixels/channel) 121 122 Register pixels 123 124 (13 pixels/channel) 125 126 A Note 127 128 Note Set the φ R and φ CP to low level during this period (A). VOUT2, VOUT4, VOUT6 VOUT1, VOUT3, VOUT5 129 130 φ CP 131 132 φR 7425 7426 φ 2L 7427 7428 φ 2∗ 7429 7430 φ 1∗ 7431 7432 φ TG 7433 7434 TIMING CHART 1 (Bit Clamp Mode) μ PD8821 7 8 Data Sheet S17961EJ2V0DS Caution 10% t8 10% t10 t17 10% t16 90% t12 90% t13 10% 10% 10% t14 t15 90% 90% t9 t6L t7L td 10% 10% 90% 10% 90% t6 "10%" and "90%" define as the clock voltage with 5 Vp-p condition. i.e. "10%" shows 0.5 V, "90%" shows 4.5 V VOUT1 to VOUT6 φ CP φR φ 2L φ 2∗ φ 1∗ TIMING CHART 2 (Bit Clamp Mode) VOS t7 μ PD8821 μ PD8821 TIMING CHART 3 (Bit Clamp Mode, Line Clamp Mode) t2 t3 t4 90% 90% φ TG 10% 10% t1 φ 1∗ 90% 90% t5 t8 t9 t10 t12 t13 t14 t15 φR 10% 90% t17 t16 φ CP Caution 90% 10% 10% "10%" and "90%" define as the clock voltage with 5 Vp-p condition. i.e. "10%" shows 0.5 V, "90%" shows 4.5 V Symbol t1, t5 t2, t4 t3 t6, t7 MIN. TYP. MAX. Unit 100 300 1000 ns 0 10 – ns 500 5000 20000 ns 0 10 – ns t6L, t7L 0 3 – ns t8, t10 0 3 – ns t9 6 125 20000 ns t12, t14 0 3 – ns t13 8 125 20000 ns t15 −3 +250 +1000 ns t16 0 125 – ns t17 4 125 – ns t20 5 125 – ns Data Sheet S17961EJ2V0DS 9 Data Sheet S17961EJ2V0DS A 25 26 5 6 3 4 1 2 (3 pixels/channel) (3650 pixels/channel) (3 pixels/channel) Invalid photocell 27 28 Valid photocell 29 30 Invalid photocell 31 32 Optical black 119 120 (48 pixels/channel) 121 122 Register pixels 123 124 (13 pixels/channel) 125 126 Note 127 128 Note Set the φ R and φ CP to low level during this period (A). VOUT2, VOUT4, VOUT6 VOUT1, VOUT3, VOUT5 129 130 φ CP 131 132 φR 7425 7426 φ 2L 7427 7428 φ 2∗ 7429 7430 φ 1∗ 7431 7432 φ TG 7433 10 7434 TIMING CHART 4 (Line Clamp Mode) μ PD8821 Data Sheet S17961EJ2V0DS Caution Low 10% t9 t10 10% 90% 10% 10% t20 90% 90% t8 t6L t7L td 10% 10% 90% 10% 90% t6 "10%" and "90%" define as the clock voltage with 5 Vp-p condition. i.e. "10%" shows 0.5 V, "90%" shows 4.5 V VOUT1 to VOUT6 φ CP φR φ 2L φ 2∗ φ 1∗ TIMING CHART 5 (Line Clamp Mode) VOS t7 μ PD8821 11 μ PD8821 (φ 1AO, φ 2AO), (φ 1BO, φ 2BO), (φ 1A, φ 2B), (φ 1B, φ 2B) cross point φ 1∗ φ 2∗ 1.5 V or more 1.5 V or more φ 1AO, φ 2L & φ 1BO, φ 2L cross points φ 1∗ φ 2L Remark 1.5 V or more 0 V or more Adjust cross points (φ 1AO, φ 2AO) (φ 1BO, φ 2BO) (φ 1A, φ 2A) (φ 1B, φ 2B) and (φ 1∗, φ 2L) with input resistance of each pin. φ 1, φ 2, φ 2L clock width Min. 3 ns Min. 3 ns Min. 4.75 V 4.75 V 4.75 V φ 1AO, φ 1BO, φ 1A, φ 1B φ 2AO, φ 2BO, φ 2A, φ 2B φ 2L φ 2L Min. 3 ns Min. 3 ns φ 1AO, φ 1BO, φ 1A, φ 1B φ 2AO, φ 2BO, φ 2A, φ 2B 0.25 V 0.25 V Min. 4.75 V 12 Data Sheet S17961EJ2V0DS μ PD8821 DEFINITIONS OF CHARACTERISTIC 1. Saturation voltage : Vsat Output signal voltage at which the response linearity is lost. 2. Saturation exposure : SE Product of intensity of illumination (lx) and storage time (s) when saturation of output voltage occurs. 3. Photo response non-uniformity : PRNU The output signal non-uniformity of all the valid pixels when the photosensitive surface is applied with the light of uniform illumination. This is calculated by the following formula, and it is defined by each six of them. PRNU (%) = Δx x × 100 Δx : maximum of | xj − x | 3650 xj j=1 Σ x= 3650 VOUT x Register Dark DC level Δx 4. Average dark signal : ADS Average output signal voltage of all the valid pixels at light shielding. This is calculated by the following formula, and it is defined by each six of them. 3650 Σd j ADS (mV) = j=1 3650 dj : Dark signal of valid pixel number j Data Sheet S17961EJ2V0DS 13 μ PD8821 5. Dark signal non-uniformity : DSNU Absolute maximum of the difference between ADS and voltage of the highest or lowest output pixel of all the valid pixels at light shielding. This is calculated by the following formula, and it is defined by each six of them. DSNU (mV) : maximum of | dj − ADS | j = 1 to 3650 dj : Dark signal of valid pixel number j VOUT ADS Register Dark DC level DSNU 6. Output impedance : ZO Impedance of the output pins viewed from outside. 7. Response : R Output voltage divided by exposure (lx•s). Note that the response varies with a light source (spectral characteristic). 8. Image lag : IL The rate between the last output voltage and the next one after read out the data of a line. φ TG ON Light OFF VOUT V1 VOUT IL (%) = V1 / VOUT × 100 9. Register imbalance : RI The rate of the difference between the averages of the output voltage of Odd and Even pixels, against the average output voltage of all the valid pixels. RI (%) = 14 2 n n 2 Σ(V2j -1 − V2j) j=1 1 n n Σ Vj j=1 × 100 n : Number of valid pixels Vj : Output voltage of each pixel Data Sheet S17961EJ2V0DS μ PD8821 10. Light shielding random noise : σ dark Light shielding random noise σ dark is defined as the standard deviation of a valid pixel output signal with 100 times (= 100 lines) data sampling at dark (light shielding). 100 σ (mV) = Σ ( Vi − V )2 i=1 100 , V= 1 100 Σ Vi 100 i=1 Vi :A valid pixel output signal among all of the valid pixels for each color. VOUT V1 line1 V2 line2 V100 line100 This is measured by the DC level sampling of only the signal level, not by CDS (Correlated Double Sampling). 11. Total transfer efficiently : TTE The total transfer rate of CCD analog shift register. This is calculated by the following formula, it is defined by each odd output. TTE(%) = (1-Vb/average output of all the valid pixels) × 100 Vb Vb: The spilt pixel output (7435th pixel) 7435 7431 7433 Data Sheet S17961EJ2V0DS 15 μ PD8821 12. Reset feed-through noise: RFTN RFTN is the switching noise by φ R and φ CP, it is defined by each output. φR φ CP φ 2L + + VOS VOUT1 to VOUT6 16 − − RFTN1 RFTN2 Data Sheet S17961EJ2V0DS μ PD8821 STANDARD CHARACTERISTIC CURVES (1) (Reference Value) DARK OUTPUT TEMPERATURE CHARACTERISTIC STORAGE TIME OUTPUT VOLTAGE CHARACTERISTIC (TA = +25°C) 2 Relative Output Voltage 10 1 1 0.2 0.1 0.1 0 10 20 30 40 50 60 1 5 10 Storage Time (ms) Operating Ambient Temperature TA (°C) TOTAL SPECTRAL RESPONSE CHARACTERISTICS (without infrared cut filter and heat absorbing filter)(TA = 25°C) 100% R G 80% Response Ration (%) Relative Output Voltage 100 B 60% 40% 20% 0% 400 500 600 700 800 Wavelength (nm) Data Sheet S17961EJ2V0DS 17 μ PD8821 STANDARD CHARACTERISTIC CURVES (2) (Reference Value) Power vs. TA (°C) Response vs. TA (°C) 1000 1.10 Response ??? ratio ????(mW) Power (mW) 800 600 400 1.05 1.00 0.95 200 0 0.90 0 10 20 30 40 50 60 0 ??????TA(?) 10 20 30 40 50 60 ??????TA(?) Operating Ambient Temperature TA (°C) Operating Ambient Temperature TA (°C) td vs. TA (°C) Offset level vs. TA (°C) 8 4.60 4.55 td (ns) ????????td(ns) ?????·????(V) Offset level (V) 7 4.50 4.45 6 5 4 3 2 1 0 4.40 0 10 20 30 40 50 0 60 ??????TA(?) Operating Ambient Temperature TA (°C) 10 RFTN1 (mV) ????·????????·????RFTN1(mV) 0 -100 -200 -300 -400 -500 10 20 30 40 50 60 ??????TA(?) Operating Ambient Temperature TA (°C) 18 30 40 ??????TA(?) 50 60 Operating Ambient Temperature TA (°C) RFTN1 vs. TA (°C) 0 20 Data Sheet S17961EJ2V0DS μ PD8821 APPLICATION CIRCUIT EXAMPLE +10 V + 0.1 μF 1 B4 2 3 B6 4 B5 5 47 Ω φR 7 φ2L φ2BO φ1AO 6 47 Ω 3 3 2Ω φ2B φTG3 VOD VOD φR φ CP φ 2L φ 2L φ 2AO 17 2Ω VOUT2 φ 1AO 16 2Ω VOUT5 φ 1BO 15 3 VOUT1 φ 2BO 14 2Ω VOUT6 9 12 3 GND GND 13 φ1A GND GND 11 +10 V VOUT3 8 10 2Ω VOUT4 18 19 20 HS-VOD HS-VOD NC NC NC NC NC NC φ1A φ2A φ2B φ1B φTG3 φTG1 φTG2 GND NC NC NC NC 40 2Ω 47 μF/25 V B3 39 38 37 B1 B2 36 35 47 Ω φCP 34 33 32 31 30 φ2L 47 Ω 2Ω 2Ω 3 φ1BO 3 φ2AO 3 φ2A 3 φ1B 29 28 +10 V 27 26 25 2Ω 24 2Ω 23 2Ω 22 2Ω φTG1 φTG2 21 +5 V B1 to B6 EQUIVALENT CIRCUIT +10 V + + 1.5 kΩ CCD VOUT 47 μ F/25 V 100 Ω 10 μF/16 V 0.1 μF Connects the 3 inverters for each φ 1 and φ 2 pin. 2SA1206 Data Sheet S17961EJ2V0DS 19 μ PD8821 PACKAGE DRAWING μPD8821CZ-A CCD LINEAR IMAGE SENSOR 40-PIN PLASTIC DIP (WITH HEAT SINK) (15.24 mm (600)) (Unit : mm) 94.4±0.5 94.0±0.5 1st valid pixel 34.7±0.4 2 14.3±0.3 1 9.75±0.4 14.7±0.3 21 40 20 1 1.27±0.15 A 6.22±0.5 B 15.24±0.20 B A 0.46±0.1 11.1±0.2 5 11.1±0.2 5 3.0±0.2 43.18±0.4 0.9±0.1 0.25±0.05 4.0±0.5 SECTION A-A (1.71) 16.67±0.5 2.54±0.25 10.0±0.2 SECTION B-B 7.4±0.3 3 7 6 4.51±0.3 4 5° 5° 1° 5 14.1±0.2 1° 5 14.8±0.2 Name Glass cap Dimensions 91.0×11.6×0.7 Refractive index 1.5 1 1st valid pixel The center of the pin1 2 1st valid pixel The center of the package 3 The surface of the CCD chip The top of the cap 4 The bottom of the package The surface of the CCD chip 5 The draft angle of the shaded portions (4 places) are 1 dgree. 6 There is no heat sink exposure from the package. 7 The center of the CCD chip Package side(shaded portion) 40C-1CCD-PKG1 20 Data Sheet S17961EJ2V0DS μ PD8821 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. Type of Through-hole Device μ PD8821CZ-A: CCD linear image sensor 40-pin plastic DIP with heat sink (15.24 mm (600)) Process Conditions Partial heating method Pin temperature: 380°C or below, Heat time: 3 seconds or less (per pin). Cautions 1. During assembly care should be taken to prevent solder or flux from contacting the glass cap. The optical characteristics could be degraded by such contact. 2. Soldering by the solder flow method may have deleterious effects on prevention of glass cap soiling and heat resistance. So the method cannot be guaranteed. NOTES OF HANDLING THE PACKAGES The application of an excessive load to the package may cause the package to warp or break, or cause chips to come off internally. Particular care should be taken when mounting the package on the circuit board. You should not reform the lead frame. We recommend to use a IC-inserter when you assemble to PCB. For this product, the reference value for the three-point bending strength Note is 280 [N] (at distance between supports: 70 mm). Avoid imposing a load, however, on the inside portion as viewed from the face on which the window (glass) is bonded to the package body. Note Three-point bending strength test Distance between supports:70mm, Support R:R2mm, Loading rate:0.5mm/min. Load Load 70 mm 70 mm Data Sheet S17961EJ2V0DS 21 μ PD8821 NOTES ON HANDLING THE PACKAGES 1 MOUNTING OF THE PACKAGE The application of an excessive load to the package may cause the package to warp or break, or cause chips to come off internally. Particular care should be taken when mounting the package on the circuit board. Don't have any object come in contact with glass cap. You should not reform the lead frame. We recommended to use a IC-inserter when you assemble to PCB. Also, be care that the any of the following can cause the package to crack or dust to be generated. 1. Applying heat to the external leads for an extended period of time with soldering iron. 2. Applying repetitive bending stress to the external leads. 3. Rapid cooling or heating 2 GLASS CAP Don’t either touch glass cap surface by hand or have any object come in contact with glass cap surface. Care should be taken to avoid mechanical or thermal shock because the glass cap is easily to damage. For dirt stuck through electricity ionized air is recommended. 3 OPERATE AND STORAGE ENVIRONMENTS Operate in clean environments. CCD image sensors are precise optical equipment that should not be subject to mechanical shocks. Exposure to high temperatures or humidity will affect the characteristics. So avoid storage or usage in such conditions. Keep in a case to protect from dust and dirt. Dew condensation may occur on CCD image sensors when the devices are transported from a low-temperature environment to a high-temperature environment. Avoid such rapid temperature changes. For more details, refer to our document "Review of Quality and Reliability Handbook" (C12769E) 4 ELECTROSTATIC BREAKDOWN CCD image sensor is protected against static electricity, but destruction due to static electricity is sometimes detected. Before handling be sure to take the following protective measures. 1. 2. 3. 4. 5. 6. 22 Ground the tools such as soldering iron, radio cutting pliers of or pincer. Install a conductive mat or on the floor or working table to prevent the generation of static electricity. Either handle bare handed or use non-chargeable gloves, clothes or material. Ionized air is recommended for discharge when handling CCD image sensor. For the shipment of mounted substrates, use box treated for prevention of static charges. Anyone who is handling CCD image sensors, mounting them on PCBs or testing or inspecting PCBs on which CCD image sensors have been mounted must wear anti-static bands such as wrist straps and ankle straps which are grounded via a series resistance connection of about 1 MΩ. Data Sheet S17961EJ2V0DS μ PD8821 NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). 2 HANDLING OF UNUSED INPUT PINS Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with mounted semiconductor devices. 4 STATUS BEFORE INITIALIZATION Power-on does not necessarily define the initial status of a MOS device. Immediately after the power source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the reset signal is received. A reset operation must be executed immediately after power-on for devices with reset functions. 5 POWER ON/OFF SEQUENCE In the case of a device that uses different power supplies for the internal operation and external interface, as a rule, switch on the external power supply after switching on the internal power supply. When switching the power supply off, as a rule, switch off the external power supply and then the internal power supply. Use of the reverse power on/off sequences may result in the application of an overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for each device and according to related specifications governing the device. 6 INPUT OF SIGNAL DURING POWER OFF STATE Do not input signals or an I/O pull-up power supply while the device is not powered. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Input of signals during the power off state must be judged separately for each device and according to related specifications governing the device. Data Sheet S17961EJ2V0DS 23 μ PD8821 • The information in this document is current as of July, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1