Advanced Technical Information VMK 165-007T VDSS = 70 V Dual Power MOSFET Module ID25 = 165 A RDS(on) = 7 mW 4 5 Common-Source connected N-Channel Enhancement Mode Symbol Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 6.8 kW 1 2 3 6 7 Maximum Ratings 70 70 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID IDM TC = 25°C TC = 100°C TC = 25°C, tp = 10 µs, pulse width limited by TJM 165 104 660 A A A Ptot TC = 25°C, TJ = 150°C 390 W -40 ... +150 150 -40 ... +125 °C °C °C 3000 3600 V~ V~ TJ TJM Tstg VISOL 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Md Mounting torque(M5 or 10-32 UNF) Terminal connection torque (M5) Weight Typical including screws 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 TO-240 AA E 72873 1 1, 3 = Drain, 5, 6 = Gate, • • • g • • Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA IGSS VGS = ±20 V DC, VDS = 0 500 nA IDSS VDS = VDSS, VGS = 0 V, TJ = 25°C VDS = 0.8 • VDSS, VGS = 0 V, TJ = 125°C 200 µA 1 mA RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 µs, duty cycle d £ 2 % Data per MOSFET unless otherwise stated. 70 2 4 V V • • 6 7 4 5 2 = Common Source 4, 7 = Kelvin Source Two MOSFET with common source International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 ceramic base plate Isolation voltage 3000 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin source contact Keyed twin plugs Applications • • • • 6 3 Features • Symbol 2 Push-pull inverters Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) AC static switches 7 mW Advantages • • • 023 • Easy to mount with two screws Space and weight savings High power density Low losses © 2000 IXYS All rights reserved 1-2 VMK 165-007T Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 pulsed 60 80 S Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 8.8 4.0 2.4 nF nF nF td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 W (External), resistive load 120 280 390 110 ns ns ns ns Qg Qgs Qgd VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 480 60 240 nC nC nC 0.2 0.32 K/W K/W 50 mm mm m/s2 RthJC RthCH with heat transfer paste dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 12.7 9.6 TO-240 AA Outline Dimensions in mm (1 mm = 0.0394") Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions IS VGS = 0 V 165 A ISM Repetitive; pulse width limited by TJM 660 A VSD IF = IS; VGS = 0 V, Pulse test, t £ 300 µs, duty cycle d £ 2 % 1.5 V trr IF = 50 A, -di/dt = 200 A/µs, VDS = 25 V, VGS = 0 V © 2000 IXYS All rights reserved 150 ns 2-2