STMICROELECTRONICS VNH100N04

VNH100N04
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TARGET DATA
TYPE
V clamp
R DS(on)
I lim
VNH100N04
42 V
0.012 Ω
100 A
■
■
■
■
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
STANDARD TO-218 PACKAGE
DESCRIPTION
The VNH100N04 is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Buit-in thermal shut-down, linear
TO-218
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
BLOCK DIAGRAM
September 1994
1/7
VNH100N04
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
Internally Clamped
V
VD S
Drain-source Voltage (V in = 0)
V in
Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-50
A
2000
V
V esd
P tot
Tj
Tc
T stg
Electrostatic Discharge (C= 100 pF, R=1.5 KΩ)
o
Total Dissipation at Tc = 25 C
208
Operating Junction Temperature
Case Operating Temperature
W
Internally Limited
o
C
Internally Limited
o
C
-55 to 150
o
C
Storage Temperature
THERMAL DATA
R thj-cas e
Rthj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
0.6
30
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
42
48
V
V CLAMP
Drain-source Clamp
Voltage
I D = 30 A
V in = 0
36
V CLTH
Drain-source Clamp
Threshold Voltage
I D = 2 mA
V in = 0
35
V I NC L
Input-Source Reverse
Clamp Voltage
I in = -1 mA
I DS S
Zero Input Voltage
Drain Current (V in = 0)
V DS = 13 V
V DS = 25 V
I ISS
Supply Current from
Input Pin
V DS = 0 V
V
-1
V in = 10 V
-0.3
V
50
200
µA
µA
250
500
µA
Typ.
Max.
Unit
3
V
0.012
0.015
Ω
Ω
Max.
Unit
ON (∗)
Symbol
VI S(th)
R DS( on)
Parameter
Test Conditions
Input Threshold
Voltage
V DS = V in
ID = 1 mA
Static Drain-source On
Resistance
V in = 10 V I D = 30 A
V in = 5 V
ID = 30 A
Min.
0.8
DYNAMIC
Symbol
gfs (∗)
C oss
2/7
Parameter
Test Conditions
Forward
Transconductance
V DS = 13 V
ID = 30 A
Output Capacitance
V DS = 13 V
f = 1 MHz
Min.
Typ.
40
Vin = 0
1800
S
3000
pF
VNH100N04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
100
400
900
400
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Id = 30 A
Rgen = 10 Ω
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Id = 30 A
Rgen = 1000 Ω
TBD
TBD
TBD
TBD
µs
µs
µs
µs
t d(on)
tr
t d(off )
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V DD = 15 V
V gen = 10 V
(see figure 3)
Id = 30 A
Rgen = 10 Ω
t d(on)
tr
t d(off )
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V DD = 15 V
V gen = 10 V
T j = 125 o C
(see figure 3)
t d(on)
tr
t d(off )
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V DD = 15 V
V gen = 10 V
(see figure 3)
Turn-on Current Slope
V DD = 15 V
V in = 10 V
Total Gate Charge
V DD = 12 V
(di/dt) on
Qg
Min.
ID = 30 A
ID = 30 A
V in = 10 V
TBD
A/µs
TBD
nC
SOURCE DRAIN DIODE
Symbol
V S D (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Forward On Voltage
I SD = 30 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 30 A di/dt = 100 A/µs
V DD = V
T j = 150 o C
(see test circuit, figure 5)
Min.
Typ.
V in = 0
Max.
Unit
TBD
V
TBD
ns
TBD
µC
TBD
A
PROTECTION
Symbol
Parameter
Test Conditions
V DS = 13 V
Min.
Typ.
Max.
Unit
70
100
140
A
TBD
µs
190
o
C
o
C
I lim
Drain Current Limit
V in = 10 V
tdlim
Step Response
Current Limit
V in = 10 V V D S = 13V
T jsh
Overtemperature
Shutdown
150
T jrs
Overtemperature Reset
135
Igf
Fault Sink Current
V in = 10 V
E as
Single Pulse
Avalanche Energy
starting T j = 25 o C
V DD = 20 V
V in = 10 V Rgen = 1 KΩ L = mH
V DS = 13 V
170
50
TBD
mA
J
(∗) Pulsed: Pul se duration = 300 µs, duty cycle 1.5 %
3/7
VNH100N04
PROTECTION FEATURES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (Iiss) flows into the Input pin in order to
supply the internal circuitry.
The device integrates:
– OVERVOLTAGE CLAMP PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
– LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperature threshold Tjsh.
4/7
–
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs in
the range 150 to 190oC, a typical value being
o
170 C. The device is automatically restarted
when the chip temperature falls below 135oC.
– STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 200 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in RDS(on)).
VNH100N04
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Input Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 6: Waveforms
5/7
VNH100N04
TO-218 (SOT-93) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2
–
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
0.163
31
1.220
–
12.2
–
0.480
Ø
4
4.1
0.157
0.161
D
C
A
E
R
L6
L5
H
G
L3
L2
F
Ø
R
6/7
1
2
3
P025A
VNH100N04
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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