ROHM VT6Z2

Power management (dual transistors)
VT6Z2
0.14
VMT6
(4)
0 ~ 0.05
0.14
(1)
(2)
(3)
0.16 ± 0.05
0.13 ± 0.05
0.4
0.4
0.8 ± 0.1
zApplications
Switch, LED driver
Abbreviated symbol : Z2
UNIT : mm
Each lead has same dimensions.
zPackaging specifications
Package
Type
0.2 ± 0.1
1.2 ± 0.1
(5)
0.92 ± 0.1
zFeatures
Very small package with two transistors.
0.5 ± 0.1
1.2 ± 0.1
(6)
0.2 ± 0.1
zDimensions (Unit : mm)
zStructure
Silicon epitaxial planar transistor
zInner circuit
Taping
Code
T2R
Basic ordering
unit (pieces)
8000
(6)
(5)
Tr1
(4)
Tr2
VT6Z2
(1)
(2)
(3)
(1) Emitter
(2) Base
(3) Collector
(4) Emitter
(5) Base
(6) Collector
(Tr1)
(Tr1)
(Tr2)
(Tr2)
(Tr2)
(Tr1)
z Absolute maximum ratings (Ta=25°C)
<Tr1> (PNP)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
IC
−100
mA
∗1
−200
mA
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Parameter
Collector current
ICP
∗1 Pw=1mS Single pulse
<Tr2> (NPN)
Parameter
IC
Collector current
ICP
100
mA
200
mA
Limits
150
Unit
mW
120
mW
150
−55 to +150
°C
∗1
∗1 Pw=1mS Single pulse
<Tr1 and Tr2>
Symbol
Parameter
Total
Power dissipation
Element
PD
Junction temperature
Tj
Storage temperature
Tstg
∗2
°C
∗2 Each terminal mounted on a recommended land
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/4
2009.10 - Rev.A
VT6Z2
Data Sheet
zElectrical characteristics (Ta=25°C)
<Tr1> (PNP)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCEO
BVCBO
−50
−
−
−50
−
−
V
V
IC= −1mA
IC= −50µA
BVEBO
−5
−
V
IE= −50µA
Collector cut-off current
ICBO
−
−
−
−0.1
µA
Emitter cut-off current
IEBO
−
−0.1
−0.15
−
−0.40
VCB= −50V
VEB= −5V
IC= −50mA, IB= −5mA
−
−
MHz
−
pF
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
VCE(sat)
−
−
DC current gain
hFE
120
Transition frequency
Output capacitance
fT
Cob
−
−
300
2
Symbol
Min.
Typ.
Max.
Unit
BVCEO
BVCBO
50
50
−
−
−
−
V
V
−
0.1
Collector-emitter saturation voltage
560
µA
V
Conditions
VCE= −6V, IC= −1mA
VCE= −10V, IE=−10mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
<Tr2> (NPN)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
BVEBO
5
−
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
−
−
VCE(sat)
−
−
−
DC current gain
hFE
120
Transition frequency
Output capacitance
fT
Cob
−
Collector-emitter saturation voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
−
0.1
V
IE=50µA
VCB=50V
VEB=5V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
0.30
350
1.6
−
−
MHz
−
pF
2/4
IC=1mA
IC=50µA
µA
µA
V
0.10
−
560
Conditions
VCE=10V, IE=−10mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
2009.10 - Rev.A
VT6Z2
Data Sheet
zElectrical characteristics curves
<Tr1> (PNP)
IB=450uA
IB=400uA
IB=350uA
IB=300uA
-50
VCE =2V
Ta=125 C
25 C
-55 C
-10
-1
-0.1
-40
IB=200uA
-30
IB=150uA
-20
IB=100uA
-10
IB=50uA
-0.6
-0.8
-1
0
-1
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
IC/IB = 20/1
IC/IB = 10/1
-0.1
-2
-3
-4
IB=0uA
-1
-10
-100
COLLECTOR CURRENT : IC (mA)
10
-0.1
-5
IC/IB = 10/1
Ta=125 C
25 C
-55 C
-0.1
-0.01
-0.01
Ta=125 C
25 C
-55 C
-1
-10
-100
COLLECTOR CURRENT : IC (mA)
-1
-10
-100
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE :
VCE (V)
-1
Ta=25 C
-1
TRANSITION FREQUENCY :fT (MHz)
-0.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
Ta=25 C
0
-0.2
VCE=5V
100
-0.01
0
1000
IB=250uA
DC CURENT GAIN : hFE
-100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
IB=500uA
1000
VCE = 10V
Ta = 25 C
100
10
-0.1
-1
-10
-100
-1000
EMITTER CURRENT :IE (mA)
100
Cib
Cob (pF)
Cib (pF)
10
Cob
1
0.1
Ta=25 C
f=1MHz
IE=0
IC=0
-0.01
-0.1
-1
-10
-100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB(V)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
3/4
2009.10 - Rev.A
VT6Z2
Data Sheet
<Tr2> (NPN)
0.1
VCE =2V
0.01
0
0.2
0.4
0.6
0.8
40
IB=250uA
20
IB=150uA
IB=100uA
0
0.1
0.01
10
100
COLLECTOR CURRENT : IC (mA)
2
3
4
100
Ta=125°C
25°C
-55°C
5
10
IB=0A
0.1
1000
IC/IB= 10/1
Ta=125°C
25°C
-55°C
0.1
0.01
1
10
100
COLLECTOR CURRENT : IC (mA)
1
10
100
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE :
VCE (V)
1
IC/IB = 20/1
IC/IB =10/1
1
VCE=5V
IB=50uA
Ta=25°C
1
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
IB=200uA
0
Ta=25°C
1
30
10
BASE TO EMITTER VOLTAGE : VBE (V)
1
IB=300uA
DC CURENT GAIN : hFE
1
1000
IB=350uA
TRANSITION FREQUENCY :fT (MHz)
Ta=125°C
25°C
-55°C
10
IB=450uA
IB=500uA
IB=400uA
50
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
100
VCE = 10V
Ta=25°C
100
10
0.1
1
10
100
1000
EMITTER CURRENT : IE (mA)
100
Cib
Cob (pF)
Cib (pF)
10
Cob
1
0
Ta=25°C
f=1MHz
IE=0
IC=0
0.01
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB(V)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
4/4
2009.10 - Rev.A
Notice
Notes
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R0039A