White Electronic Designs WMS256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES ■ Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ PIN CONFIGURATION FOR WMS256K16-XXX 44 CSOJ Packaging 44 FlatpacK • 44 pin Ceramic SOJ (Package 102) TOP VIEW • 44 lead Ceramic Flatpack (Package 225) A0 A1 A2 A3 A4 CS# I/O1 I/O2 I/O3 I/O4 VCC GND I/O5 I/O6 I/O7 I/O8 WE# A5 A6 A7 A8 A9 • 44 lead Formed Ceramic Flatpack ■ Organized as 256Kx16 ■ Data Byte Control: • Lower Byte (LB#) = I/O1-8 • Upper Byte (UB#) = I/O9-16 ■ 2V Minimum Data Retention for battery back up operation (WMS256K16L-XXX Low Power Version Only) ■ Commercial, Industrial and Military Temperature Range ■ 5V Power Supply ■ Low Power CMOS ■ TTL Compatible Inputs and Outputs 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE# UB# LB# I/O16 I/O15 I/O14 I/O13 GND VCC I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10 PIN DESCRIPTION A0-17 LB# UB# I/O1-16 CS# OE# WE# VCC GND NC August 2004 Rev. 6 1 Address Inputs Lower-Byte Control (I/O1-8) Upper-Byte Control (I/O9-16) Data Input/Output Chip Select Output Enable Write Enable +5.0V Power Ground No Connection White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WMS256K16-XXX TRUTH TABLE CS# WE# OE# LB# UB# H L L X H X X H X L H L L L X X X H L H L L H L X X H H L L H L L Data I/O Mode Not Select I/O9-16 High Z Standby Output Disable High Z High Z Active Data Out High Z Data Out Data In High Z Data In High Z Data Out Data Out High Z Data In Data In Read Write ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC Min -55 -65 -0.5 -0.5 Power I/O1-8 High Z Max +125 +150 VCC+0.5 150 7.0 Active Active RECOMMENDED OPERATING CONDITIONS Unit °C °C V °C V Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.3 -55 Max 5.5 VCC + 0.3 +0.8 +125 Unit V V V °C CAPACITANCE TA = +25°C Parameter Input capacitance Output capacitance Symbol CIN COUT Condition VIN = 0V, f = 1.0MHz VOUT = 0V, f = 1.0MHz Max 20 20 Unit pF pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Max Units Input Leakage Current Symbol ILI Conditions VCC = 5.5, VIN = GND to VCC Min 10 µA Output Leakage Current ILO CS# = VIH, OE# = VIH, VOUT = GND to VCC 10 µA Operating Supply Current ICC CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5 275 mA Standby Current ISB CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 17 mA Output Low Voltage VOL IOL = 6mA, VCC = 4.5 0.4 V Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 2.4 V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY) -55°C ≤ TA ≤ +125°C Parameter Symbol Conditions Min 2.0 Data Retention Supply Voltage VDR CS# ≥ VCC -0.2V Data Retention Current ICCDR1 VCC = 3V August 2004 Rev. 6 Typ 1.0 2 Max Units 5.5 V 8.0 mA White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WMS256K16-XXX AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Symbol Read Cycle Read Cycle Time tRC Address Access Time tAA Output Hold from Address Change tOH Chip Select Access Time tACS Output Enable to Output Valid tOE Chip Select to Output in Low Z tCLZ1 Output Enable to Output in Low Z tOLZ1 Chip Disable to Output in High Z tCHZ1 Output Disable to Output in High Z tOHZ1 LB#, UB# Access Time tBA LB#, UB# Enable to Low Z Output tBLZ1 LB#, UB# Disable to High Z Output tBHZ1 1. This parameter is guaranteed by design but not tested. -17 Min 17 -20 Max Min 20 -25 Max 17 0 0 35 25 15 5 0 5 0 35 20 5 0 10 10 12 12 12 14 0 0 9 Max 0 20 12 9 9 10 Min 35 25 0 0 -35 Max 20 17 10 2 0 Min 25 15 15 17 0 10 12 15 Units ns ns ns ns ns ns ns ns ns ns ns ns AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Write Cycle Symbol Write Cycle Time tWC Chip Select to End of Write tCW Address Valid to End of Write tAW Data Valid to End of Write tDW Write Pulse Width tWP Address Setup Time tAS Address Hold Time tAH Output Active from End of Write tOW1 Write Enable to Output in High Z tWHZ1 Data Hold Time tDH LB#, UB# Valid to End of Write tBW 1. This parameter is guaranteed by design but not tested. -17 Min 17 14 14 10 14 0 2 0 -20 Max Min 20 17 17 12 17 0 2 0 9 0 14 -25 Max Min 25 20 20 15 20 0 2 0 10 -35 Max 0 20 I OL Current Source VZ ns ns ns ns ns ns ns ns ns ns ns Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V Notes: Vz is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. Vz is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. ≈ 1.5V (Bipolar Supply) C eff = 50 pf 15 0 25 Units AC TEST CONDITIONS Parameter D.U.T. Max 10 0 17 AC TEST CIRCUIT Min 35 25 25 20 25 0 2 0 I OH Current Source August 2004 Rev. 6 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WMS256K16-XXX TIMING WAVEFORM - READ CYCLE tRC tRC ADDRESS ADDRESS tAA tAA CS# tOH tCHZ tACS DATA I/O PREVIOUS DATA VALID DATA VALID LB#, UB# tBHZ tBA READ CYCLE 1 (CS# = OE# = VIL, UB# or LB# = VIL, WE# = VIH) tBLZ tCLZ OE# tOE tOHZ tOLZ DATA I/O DATA VALID HIGH IMPEDANCE READ CYCLE 2 (WE# = VIH) WRITE CYCLE - WE# CONTROLLED tWC ADDRESS tAW tAH tCW CS# tBW LB#, UB# tAS tWP WE# tOW tWHZ DATA I/O tDW tDH DATA VALID WRITE CYCLE 1, WE# CONTROLLED WRITE CYCLE - LB#, UB# CONTROLLED WRITE CYCLE - CS# CONTROLLED tWC tWC ADDRESS ADDRESS tAS tAW tAH tCW tAS CS# tBW tBW LB#, UB# tWP tWP WE# WE# tDW tDH tDW DATA I/O DATA VALID WRITE CYCLE 2, CS# CONTROLLED August 2004 Rev. 6 tAH tCW CS# LB#, UB# DATA I/O tAW tDH DATA VALID WRITE CYCLE 3, LB#, UB# CONTROLLED 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WMS256K16-XXX PACKAGE 102: 44 LEAD, CERAMIC SOJ 3.96 (0.156) MAX 28.70 (1.13) ± 0.25 (0.010) 0.89 (0.035) Radius TYP 0.2 (0.008) ± 0.05 (0.002) 11.3 (0.446) ± 0.2 (0.009) 9.55 (0.376) ± 0.25 (0.010) 1.27 (0.050) ± 0.25 (0.010) 1.27 (0.050) TYP 26.7 (1.050) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK 28.45 (1.120) ± 0.26 (0.010) 2.60 (0.102) MAX 12.95 (0.510) ± 0.13 (0.005) 10.16 (0.400) ± 0.51 (0.020) 0.43 (0.017) ± 0.05 (0.002) 0.14 (0.006) ± 0.05 (0.002) 1.27 (0.050) TYP 26.67 (1.050) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES August 2004 Rev. 6 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WMS256K16-XXX PACKAGE 211: 44 LEAD FORMED, CERAMIC FLAT PACK 3.81 (0.150) MAX 28.45 (1.120) PIN 1 IDENTIFIER 1.52 (0.060) TYP ± 0.26 (0.010) 12.95 (0.510) 16.76 (0.660) ± 0.13 (0.005) ± 0.13 (0.005) 0.43 (0.017) ± 0.05 (0.002) 26.67 (1.050) TYP 1.27 (0.050) TYP 0.14 (0.006) ± 0.05 (0.002) + 1.90 (0.075) TYP + 0.46 (0.030) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W M S 256K16 X - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE: DL = 44 Lead Ceramic SOJ (Package 102) FL = 44 Lead Ceramic Flatpack (Package 225) FG = 44 Lead Formed Ceramic Flatpack ACCESS TIME (ns) IMPROVEMENT MARK: Blank = Standard Power L = Low Power Data Retention ORGANIZATION, 256K x 16 SRAM MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. August 2004 Rev. 6 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs DEVICE TYPE WMS256K16-XXX SPEED PACKAGE SMD NO. 256K x 16 SRAM Monolithic 35ns 44 lead SOJ (DL) 5962-96902 01HMX 256K x 16 SRAM Monolithic 25ns 44 lead SOJ (DL) 5962-96902 02HMX 256K x 16 SRAM Monolithic 20ns 44 lead SOJ (DL) 5962-96902 03HMX 256K x 16 SRAM Monolithic 17ns 44 lead SOJ (DL) 5962-96902 04HMX 256K x 16 SRAM Monolithic 35ns 44 lead Flatpack (FL) 5962-96902 01HNX 256K x 16 SRAM Monolithic 25ns 44 lead Flatpack (FL) 5962-96902 02HNX 256K x 16 SRAM Monolithic 20ns 44 lead Flatpack (FL) 5962-96902 03HNX 256K x 16 SRAM Monolithic 17ns 44 lead Flatpack (FL) 5962-96902 04HNX 256K x 16 SRAM Monolithic 35ns 44 lead Formed Flatpack (FG) 5962-96902 01HTX 256K x 16 SRAM Monolithic 25ns 44 lead Formed Flatpack (FG) 5962-96902 02HTX 256K x 16 SRAM Monolithic 20ns 44 lead Formed Flatpack (FG) 5962-96902 03HTX 256K x 16 SRAM Monolithic 17ns 44 lead Formed Flatpack (FG) 5962-96902 04HTX August 2004 Rev. 6 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com