Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V(BR)DSS Rds(on) () 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard 1 2 G S Product WNM3003 is Pb-free. Configuration (Top View) Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z WT3* Small package SOT-23 = Device Code * = Month (A~Z) Marking Applications Order Information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging http://www.twtysemi.com WT3 Device WNM3003-3/TR [email protected] Package SOT-23 Shipping 3000/Tape&Reel 1 of 3 Product specification WNM3003 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TA=25°C Continuous Drain Current a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C ID PD ID PD Unit V 4.0 3.7 3.2 3.0 0.8 0.7 0.5 0.4 3.7 3.4 2.9 2.7 0.7 0.6 0.4 0.3 A W A W Pulsed Drain Current c IDM 10 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t 10 s Steady State t 10 s Steady State Steady State RșJA RșJA Typical Maximum 120 145 132 168 145 174 158 202 60 75 RșJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. http://www.twtysemi.com [email protected] Unit °C/W 2 of 3 Product specification WNM3003 o Electronics Characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS =24 V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±20V VGS(TH) VGS = VDS, ID = 250uA 30 V 1 uA ±100 nA 1.6 3.0 V VGS = 10V, ID = 3.1A 33 47 VGS = 10V, ID = 2.5A 33 47 VGS = 4.5V, ID = 2.0A 43 59 VDS = 4.5V, ID = 2.8A 5.8 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 1.0 m S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 570 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS =10 V, VDS =15 V, 0.8 Gate-to-Source Charge QGS ID = 3.1A 1.25 Gate-to-Drain Charge QGD VGS = 0 V, f = 1.0 MHz, VDS = pF 72 15 V 64 11.6 nC 3.0 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 5 Rise Time tr VGS = 10 V, VDS = 15 V, 3.3 Turn-Off Delay Time td(OFF) ID=1A, RG=6 39 Fall Time tf ns 4.4 BODY DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com VSD VGS = 0 V, IS = 1.5A [email protected] 0.50 0.84 1.50 V 3 of 3