WEITRON WTX7002

WTX7002
N-Channel ENHANCEMENT MODE
POWER MOSFET
3
P b Lead(Pb)-Free
1
2
FEATURES:
SC-89
* Low Gate Charge for Fast Switching
* ESD Protected Gate
Drain
3
APPLICATIONS:
* Power Management Load Switch
* Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
1
Gate
(Top View)
2
Source
Maximum Ratings (TA=25°C unless otherwise specified)
Characteristic
Symbol
Values
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±10
V
ID
154
mA
IDM
618
mA
Continuous Source Current (Body Diode)
ISD
154
mA
Total Power Dissipation
PD1
300
mW
Junction temperature Range
Tj
150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Drain Current
Pulsed Drain Current
tp ≤ 10μs
Note 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Device Marking
WTX7002 = T6
WEITRON
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1/5
25-Jan-10
WTX7002
Electrical Characteristics (TA=25°C unless otherwise specified,per element)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS=0V, ID=100µA
V(BR)DSS
30
-
-
V
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
IDSS
-
-
1.0
µA
Gate-source Leakage
VGS=±10V, VDS=0V
IGSS
-
-
±25
µA
Gate Threshold Voltage
VDS=VGS, ID=100µA
VGS(th)
0.5
1.0
1.5
V
Static Drain-Source On-Resistance
VGS=4.5V, ID =154mA
VGS=2.5V, ID =154mA
RDS(ON)
-
1.4
2.3
7.0
7.5
Ω
80
-
mS
OFF CHARACTERISTICS(Note2)
ON CHARACTERISTICS(Note2)
Forward transfer admittance
VDS=3V, ID=154mA
gfs
-
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS=5V, VGS=0V, f=1.0MHz
Ciss
-
11.5
-
Output Capacitance
VDS=5V, VGS=0V, f=1.0MHz
Coss
-
10
-
Reverse Transfer Capacitance
VDS=5V, VGS=0V, f=1.0MHz
Crss
-
3.5
-
Turn-On Delay Time
VDS=5.0V, VGS=4.5V, ID=75mA, RG=10Ω
t d(ON) *
-
13
-
Rise Time
VDS=5.0V, VGS=4.5V, ID=75mA, RG=10Ω
tr
-
15
-
t d(OFF) *
-
98
-
tf
-
60
-
VSD
-
0.77
0.9
pF
SWITCHING CHARACTERISTICS
VDS=5.0V, VGS=4.5V, ID=75mA, RG=10Ω
Fall Time
VDS=5.0V, VGS=4.5V, ID=75mA, RG=10Ω
nS
Drain-Source Diode Characteristics
Input Capacitance
VGS=0V, IS=0.154mA
V
*Pulse Test : pulse width ≤ 300µs, Duty cycle ≤ 2%.
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WTX7002
Characteristics Curve
VGS = 10 V
5V
2.8 V
2.4 V
0.18
0.16
0.14
0.2
TJ = 25°C
VDS = 5 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
0.2
2V
0.12
0.1
0.08
0.06
0.04
0.02
1.4 V
0
1.2 V
0
0.4
0.8
1.2
1.6
0.16
0.12
0.08
TJ = 125°C
0.04
TJ = 25°C
TJ = −55°C
0
0.6
2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
VGS = 4.5 V
TJ = 125°C
2
1.5
TJ = 25°C
1
TJ = −55°C
0.5
0.05
0.1
0.15
ID, DRAIN CURRENT (AMPS)
0
0.2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
2.5
TJ = 25°C
1.5
VGS = 4.5 V
1
0.5
0
0.05
0.1
0.15
ID, DRAIN CURRENT (AMPS)
0.2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1000
ID = 0.15 A
VGS = 4.5 V
VGS = 0 V
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
2
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
1.2
0.8
1
1.4
1.6
1.8
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.4
1.2
1
0.8
0.6
100
TJ = 150°C
10
TJ = 125°C
0.4
0.2
0
−50
1
−25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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25-Jan-09
WTX7002
Characteristics Curve
20
Ciss
1000
TJ = 25°C
VDD = 5.0 V
ID = 75 mA
VGS = 4.5 V
Crss
15
10
Ciss
td(off)
tf
100
tr
td(on)
10
Coss
5
0
10
t, TIME (ns)
C, CAPACITANCE (pF)
25
VDS = 0 V
5
VGS = 0 V
0
VGS
Crss
5
10
15
1
20
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
10
RG, GATE RESISTANCE (OHMS)
100
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (AMPS)
0.16
0.14
VGS = 0 V
TJ = 25°C
0.12
0.1
0.08
0.06
0.04
0.02
0
0.5
0.55
0.6
0.65
0.7
0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.8
Figure 9. Diode Forward Voltage vs. Current
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25-Jan-09
WTX7002
SC-89 Outline Demensions
Unit:mm
A
SC-89
Dim
A
B
C
D
G
J
K
M
N
S
3
T OP V IE W
2
1
K
B
S
G
D
N
M
C
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Min
1.50
0.75
0.60
0.23
0.10
0.30
----1.50
Nom
1.60
0.85
0.70
0.28
0.50BSC
0.15
0.40
----1.60
Max
1.70
0.95
0.80
0.33
0.20
0.50
10
10
1.70
25-Jan-09