7MBP 200RA-060 IGBT IPM 600V 6×200A+Chopper Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=58.8% Collector Power Dissipation One Transistor Dynamic Brake Continuous Collector Current 1ms Forward Current of Diode One Transistor Collector Power Dissi. DB Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 450 500 400 600 200 400 200 735 75 150 75 320 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 n Outline Drawing Units Min. 0 0 200 0 V A W A W V mA V mA °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV DB Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF ICES VCE(Sat) VF Conditions VCE=600V, Input Terminal Open IC=200A -IC=200A VCE=600V, Input Terminal Open IC=75A -IC=75A Min. Typ. Max. 1.0 2.8 3.0 1.0 2.8 3.3 Units mA V V mA V V Min. 6 24 1.00 1.70 Typ. Max. 32 114 1.70 2.40 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level DB Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. 1.35 2.05 8.0 110 150 Tj=125°C Tj=125°C Tj=25°C 300 113 V 125 20 Surface of IGBT Chip mA °C 20 1.5 1425 11.0 0.2 A 10 2 1500 1575 12.5 µs ms Ω V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=200A, VDC=300V IF=200A, VDC=300V Min. 0.3 Typ. Max. Units 3.6 0.4 µs 7MBP 200RA-060 IGBT IPM 600V 6×200A+Chopper • Thermal Characteristics Items Thermal Resistance n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection Symbols Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode DB IGBT With Thermal Compound Min. Typ. 0.05 Max. 0.17 0.36 0.39 Units °C/W IGBT IPM 600V 6×200A+Chopper 7MBP 200RA-060 n Dynamic Brake Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j=25°C 140 V C C =17V,15V, 13V V C C =17V,15V, 13V [A] 120 C 100 Collector Current : I Collector Current : I C [A] 120 T j=125°C 140 80 60 40 20 100 80 60 40 20 0 0 0 1 2 3 Collector-Emitter Voltage : V C E [V] 4 0 10 SCSOA (non-repetitive pulse) [A] C IGBT 10 450 Collector Current : I Thermal Resistance : R V C C =15V, T j<125°C 750 0 600 10 -1 300 150 RBSOA (repetitive pulse) -2 10 -3 10 -2 10 -1 10 0 0 0 100 Pulse Width : P W [sec] 200 400 500 600 700 Over Current Protection vs. Junction Temperature (per device) 350 300 Collector-Emitter Voltage : V CE [V] Power Derating For IGBT V cc =15 V [A] 200 180 oc 300 C [W] 4 Reverse Biased Safe Operating Area th(j-c) [°C/W] Transient Thermal Resistance 1 2 3 Collector-Emitter Voltage : V C E [V] Over Current Protection Level : I Collector Power Dissipation : P 160 250 200 150 100 50 0 0 20 40 60 80 100 120 C a s e T e m p e r a t u r e : T C [°C] 140 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Junction Temperature: T j [°C] 120 140 7MBP 200RA-060 IGBT IPM 600V 6×200A+Chopper n Control Circuit Input Signal Threshold Voltage Power Supply Current vs. Switching Frequency 4,0 V C C =17V N-Side T j =125°C V C C =15V 60 V C C =13V 50 40 30 V C C =17V P-Side V C C =15V 20 V C C =13V 10 3,0 V in(off) 2,5 2,0 1,5 5 10 15 20 Switching Frequency : fsw [kHz] 0,5 0,0 12 25 [V] H Under Voltage Hysterisis : V UV [V] 10 8 6 4 2 18 40 60 80 100 120 0,4 0,2 0,0 20 140 40 60 80 100 120 140 Junction Temperature: T j [°C] Over Heating Characteristics T cOH, T jOH , T cH , T jH vs. V cc 3,0 , T jOH [°C] cOH T j=125°C 2,0 T j=25°C 1,5 1,0 0,5 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 Over Heating Hysterisis : T 2,5 , T jH [°C] cH 200 Over Heating Protection : T [ms] 17 0,6 Alarm Hold Time vs. Power Supply Voltage ALM 16 0,8 Junction Temperature : T j [°C] Alarm Hold Timen : t 15 1,0 12 0,0 12 14 Under Voltage Hysterisis vs. Junction Temperature 14 Under Voltage : V 13 Power Supply Voltage : V cc [V] Under Voltage vs. Junction Temperature 0 20 V in(on) 1,0 0 0 T j=25°C 3,5 : V in(on) , V in(off) [V] 70 Input Signal Threshold Voltage [mA] CC Power Supply Current : I vs. Power Supply Voltage T j=100°C 80 T jOH 150 T cOH 100 50 T cH ,T jH 0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 IGBT IPM 600V 6×200A+Chopper 7MBP 200RA-060 n Inverter Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j=25°C 400 350 [A] V C C =17V,15V, 13V 250 Collector Current : I Collector Current : I V C C =17V,15V, 13V 300 C 300 C [A] 350 200 150 100 50 250 200 150 100 50 0 0 1 2 3 Collector-Emitter Voltage : V CE [V] 4 0 1 2 3 Collector-Emitter Voltage : V CE [V] Switching Time vs. Collector Current V D C = 3 0 0 V , V C C=15V, T j = 2 5 ° C V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [ns] Switching Time vs. Collector Current t off t on 1000 Switching Time : t tf 100 0 t off t on 1000 50 100 150 200 250 300 tf 100 350 0 50 Collector Current : I C [A] 100 150 200 250 350 Reverse Recovery Characteristics Forward Voltage vs. Forward Current trr , Irr vs. I F rr T j=125°C 25°C trr=125°C 250 200 150 100 50 Reverse Recovery Time : t Reverse Recovery Current : I F rr 300 [ns] [A] 350 [A] 300 Collector Current : I C [A] 400 Forward Current : I 4 on on , t r, t off , t f [ns] 0 Switching Time : t T j=125°C 400 trr=25°C 100 I rr=125°C I rr=25°C 10 0 0 1 2 Forward Voltage : V F [V] 3 4 0 50 100 150 200 250 300 Forward Current : I F [A] 350 400 IGBT IPM 600V 6×200A+Chopper 7MBP 200RA-060 n Inverter Reverse Biased Safe Operating Area Transient Thermal Resistance 10 V C C =15V, T j<125°C 2000 0 SCSOA Thermal Resistance : Rth(j-c) [°C/W] 1800 (non-repetitive pulse) [A] 1600 IGBT -1 1200 Collector Current : I 10 1400 C FWD 1000 800 600 400 RBSOA 200 10 -2 10 0 -3 10 -2 10 0 -1 600 [W] 300 Collector Power Dissipation : P 300 200 100 0 40 60 80 100 120 140 250 200 150 100 50 0 160 0 20 40 60 80 100 120 140 Case Temperature : T C (°C) Case Temperature : T C (°C) Switching Loss vs. Collector Current Switching Loss vs. Collector Current V D C =300V, V C C =15V, T j=125°C , E off , E rr [mJ/cycle] E on 20 on E off Switching Loss : E 15 10 5 E rr 0 160 V D C =300V, V C C =15V, T j=125°C 30 25 700 350 C [W] C Collector Power Dissipation : P 400 , E off , E rr [mJ/cycle] 500 (per device) 400 500 on 400 Power Derating For FWD 600 Switching Loss : E 300 Power Derating For IGBT 700 30 200 Collector-Emitter Voltage : V CE [V] 800 20 100 Pulse Width : P W [sec] (per device) 0 (repetitive pulse) E on 25 20 E off 15 10 5 E rr 0 0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 7MBP 200RA-060 IGBT IPM 600V 6×200A+Chopper n Inverter Over Current Protection Level : I oc [A] Over Current Protection vs. Junction Temperature V cc =15 V 500 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [°C] n Outline Drawing Weight: 920g Specification is subject to change without notice October 98