AP02N60I
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
D
▼ Fast Switching
▼ Simple Drive Requirement
G
BVDSS
600V
RDS(ON)
8Ω
ID
2A
S
Description
The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
± 30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
2
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1.26
A
1
IDM
Pulsed Drain Current
3.6
A
PD@TC=25℃
Total Power Dissipation
22
W
0.176
W/℃
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
80
mJ
IAR
Avalanche Current
2
A
EAR
Repetitive Avalanche Energy
2
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
5.7
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200117032
AP02N60I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
600
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1A
-
-
8
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=20V, ID=1A
-
0.2
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=2A
-
14
-
nC
VGS=0V, ID=1mA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.5
-
nC
VDS=300V
-
9.5
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=2A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
21
-
ns
tf
Fall Time
RD=150Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
155
-
pF
Coss
Output Capacitance
VDS=25V
-
27
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Min.
Typ.
-
-
2
A
-
-
3.6
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
1
Tj=25℃, IS=2A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω , IAS=2A.
3.Pulse width <300us , duty cycle <2%.
Max. Units
AP02N60I
1.5
T C =25 o C
10V
6.0V
T C =150 o C
0.8
10V
6.0V
5.5V
ID , Drain Current (A)
ID , Drain Current (A)
5.5V
1
5.0V
0.5
0.6
5.0V
0.4
V GS =4.5V
0.2
V GS =4.5V
0
0
0
5
10
15
0
20
5
10
15
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D =1A
V GS =10V
2.4
1.1
Normalized R DS(ON)
Normalized BVDSS (V)
2
1
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
150
-50
0
50
100
o
T j , Junction Temperature ( C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP02N60I
2.4
30
20
1.6
PD (W)
ID , Drain Current (A)
2
1.2
10
0.8
0.4
0
0
25
50
75
100
125
0
150
50
o
100
150
o
T c , Case Temperature ( C )
Tc, Case Temperature ( C )
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
10
1
Normalized Thermal Response (R thjc)
Duty Factor = 0.5
100us
1
ID (A)
1ms
10ms
100ms
0.1
T C =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthjc + TC
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP02N60I
f=1.0MHz
1000
16
I D =2A
V DS =320V
V DS =400V
12
V DS =480V
10
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
6
4
Coss
2
Crss
10
0
0
2
4
6
8
10
12
14
16
18
1
20
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
5
100
4
10
3
VGS(th) (V)
T j = 25 o C
IS (A)
T j = 150 o C
2
1
1
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP02N60I
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
10%
+
S
10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q