RENESAS BB502M

BB502M
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
REJ03G0833-0500
(Previous ADE-208-809C)
Rev.5.00
Aug.10.2005
Features
•
•
•
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.6 dB typ. at f = 900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
Notes:
1. Marking is “BS–”.
2. BB502M is individual type number of RENESAS BBFET.
Rev.5.00 Aug 10, 2005 page 1 of 10
1. Source
2. Gate1
3. Gate2
4. Drain
BB502M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Ratings
6
Unit
V
+6
–0
V
Gate2 to source voltage
VG2S
V
Drain current
Channel power dissipation
Channel temperature
Storage temperature
ID
Pch
Tch
Tstg
+6
–0
20
150
150
–55 to +150
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
Min
6
+6
+6
—
—
0.5
Typ
—
—
—
—
—
0.7
Max
—
—
—
+100
+100
1.0
Unit
V
V
V
nA
nA
V
VG2S(off)
0.5
0.7
1.0
V
Drain current
ID(op)
8
11
14
mA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 180 kΩ
Forward transfer admittance
|yfs|
20
25
30
mS
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Ciss
Coss
Crss
PG
NF
1.4
0.7
—
17
—
1.7
1.1
0.02
22
1.6
2.0
1.5
0.05
—
2.2
pF
pF
pF
dB
dB
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 180 kΩ, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 180 kΩ
f = 1 MHz
Gate2 to source cutoff voltage
Rev.5.00 Aug 10, 2005 page 2 of 10
Test conditions
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
IG2 = +10 µA, VG1S = VDS = 0
VG1S = +5 V, VG2S = VDS = 0
VG2S = +5 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 µA
VDS = 5 V, VG1S = 5 V
ID = 100 µA
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 180 kΩ
f = 900 MHz
BB502M
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
Application Circuit
VDS = 5 V
VAGC = 4 to 0.3 V
BBFET
Input
RG
VGG = 5 V
Rev.5.00 Aug 10, 2005 page 3 of 10
RFC
Output
BB502M
900MHz Power Gain, Noise Figure Test Circuit
VD
VG1 VG2
C6
C4
C5
R1
R2
C3
R3
RFC
Output (50Ω)
D
G2
L3
Input (50Ω)
L4
G1
S
L1
L2
C1
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
C2
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
180 kΩ
47 kΩ
4.7 kΩ
L2:
L1:
10
3
3
8
10
26
(φ1mm Copper wire)
Unit: mm
21
L4:
L3:
18
10
10
7
7
29
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
Rev.5.00 Aug 10, 2005 page 4 of 10
BB502M
Typical Output Characteristics
20
100
50
0
50
100
150
kΩ
0
kΩ
12
0
=
330
1
2
3
kΩ
4
5
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 120 kΩ
3V
2V
8
4
VG2S = 1 V
1
2
3
4
16
8
4
0
5
4V
2V
VG2S = 1 V
3
4
Gate1 Voltage VG1 (V)
Rev.5.00 Aug 10, 2005 page 5 of 10
5
Forward Transfer Admittance |yfs| (mS)
12
2
2
3
4
5
Forward Transfer Admittance
vs. Gate1 Voltage
16
1
1
Gate1 Voltage VG1 (V)
VDS = 5 V
RG = 270 kΩ
4
2V
VG2S = 1 V
20
3V
4V
3V
Drain Current vs. Gate1 Voltage
8
VDS = 5 V
RG = 180 kΩ
12
Gate1 Voltage VG1 (V)
Drain Current ID (mA)
G
4
Drain Current vs. Gate1 Voltage
Drain Current ID (mA)
Drain Current ID (mA)
8
Drain to Source Voltage VDS (V)
4V
0
kΩ
0
18 k Ω
0
22 Ω
k
0
27
Ambient Temperature Ta (°C)
12
0
12
0
200
20
16
16
15
150
VG2S = 4 V
VG1 = VDS
R
200
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
30
24
VDS = 5 V
RG = 120 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
Gate1 Voltage VG1 (V)
5
BB502M
Forward Transfer Admittance
vs. Gate1 Voltage
30
24
VDS = 5 V
RG = 180 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance
vs. Gate1 Voltage
30
VDS = 5 V
RG = 270 kΩ
24 f = 1 kHz
18
12
6
VG2S = 1 V
0
Noise Figure NF (dB)
Power Gain PG (dB)
5
4
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
200
500
3
2
1
0
100
1000
Gate Resistance RG (kΩ)
200
500
1000
Gate Resistance RG (kΩ)
Power Gain vs. Drain Current
Noise Figure vs. Drain Current
30
4
25
Noise Figure NF (dB)
Power Gain PG (dB)
4
Noise Figure vs. Gate Resistance
15
20
15
5
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
0
0
5
10
3
Power Gain vs. Gate Resistance
20
0
100
2
Gate1 Voltage VG1 (V)
25
5
1
Gate1 Voltage VG1 (V)
30
10
4V
3V
10
15
Drain Current ID (mA)
Rev.5.00 Aug 10, 2005 page 6 of 10
20
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
3
2
1
0
0
5
10
15
Drain Current ID (mA)
20
BB502M
Power Gain vs.
Gate2 to Source Voltage
Drain Current vs. Gate Resistance
25
VDS = VG1 = 5 V
VG2S = 4 V
15
Power Gain PG (dB)
Drain Current ID (mA)
20
10
5
0
100
500
200
20
15
10
VDS = 5 V
RG = 180 kΩ
f = 900 MHz
5
0
1
1000
Noise Figure vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
4
VDS= 5 V
RG = 180 kΩ
f = 900 MHz
4
Input Capacitance Ciss (pF)
Noise Figure NF (dB)
5
3
2
1
1
2
4
3
Gate2 to Source Voltage VG2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
0
Gain Reduction GR (dB)
4
3
Gate2 to Source Voltage VG2S (V)
Gate Resistance RG (kΩ)
10
20
30
VDS = VG1 = 5 V
VG2S = 4 V
RG = 180 kΩ
40
50
2
4
3
2
1
0
Gate2 to Source Voltage VG2S (V)
Rev.5.00 Aug 10, 2005 page 7 of 10
3
2
1
0
VDS = 5 V
RG = 180 kΩ
f = 1 MHz
0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
BB502M
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
1
90°
.8
1.5
.6
60°
120°
2
Scale: 1 / div.
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–60°
–120°
–1.5
–90°
Test Condition; VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
Test Condition: VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.002 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition: VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
Rev.5.00 Aug 10, 2005 page 8 of 10
–2
–.6
–.8
–1
–1.5
Test Condition: VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
BB502M
S Parameter
(VDS = VG1 = 5V, VG2S = 4V, RG = 180kΩ, Zo = 50Ω)
f(MHz)
S11
S21
S12
S22
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
MAG.
0.994
0.994
0.991
0.985
0.985
0.975
0.969
0.962
0.954
0.945
0.935
0.925
0.918
0.909
0.898
0.887
ANG.
–2.8
–5.7
–9.2
–12.5
–15.5
–18.7
–22.0
–24.9
–27.7
–30.8
–33.8
–36.6
–39.5
–42.5
–45.0
–47.8
MAG.
2.52
2.51
2.50
2.47
2.46
2.43
2.40
2.38
2.35
2.31
2.28
2.25
2.21
2.18
2.14
2.09
ANG.
176.2
172.4
168.1
164.1
160.0
156.4
152.3
148.6
144.6
141.0
136.7
133.4
130.3
126.1
122.9
119.5
MAG.
0.00072
0.00161
0.00230
0.00297
0.00374
0.00436
0.00507
0.00557
0.00625
0.00663
0.00721
0.00747
0.00761
0.00807
0.00828
0.00801
ANG.
88.6
80.9
86.6
78.0
78.9
80.6
70.9
77.3
72.4
70.0
70.5
68.4
65.6
65.6
67.6
65.1
MAG.
0.995
0.998
0.997
0.996
0.994
0.992
0.990
0.989
0.987
0.984
0.981
0.978
0.975
0.972
0.969
0.965
ANG.
–2.2
–4.0
–6.2
–8.2
–10.2
–12.2
–14.2
–16.3
–18.5
–20.4
–22.4
–24.3
–26.4
–28.3
–30.2
–32.2
850
900
950
1000
0.874
0.862
0.855
0.845
–50.6
–53.0
–55.5
–58.1
2.07
2.03
1.99
1.95
116.0
112.7
109.4
106.1
0.00815
0.00832
0.00738
0.00802
63.6
65.1
61.8
65.8
0.961
0.958
0.954
0.951
–34.2
–36.1
–37.9
–39.8
Rev.5.00 Aug 10, 2005 page 9 of 10
BB502M
Package Dimensions
JEITA Package Code
RENESAS Code
SC-61AA
Package Name
PLSP0004ZA-A
MASS[Typ.]
MPAK-4 / MPAK-4V
D
0.013g
A
e
e2
b1
Q
c
B
B
E
HE
Reference
Symbol
L
A
LP
L1
A
A3
x M S
b
A
e2
A2
e
I1
A
b5
S
b
b2
e1
A1
y S
b1
b3
c1
c
c1
I1
c
b4
A-A Section
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
b2
b3
c
c1
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
I1
Q
Dimension in Millimeters
Min
1.0
0
1.0
0.35
0.55
0.1
2.7
1.35
2.2
0.35
0.15
0.25
Nom
1.1
0.25
0.42
0.62
0.4
0.6
0.13
0.11
1.5
0.95
0.85
2.8
Max
1.3
0.1
1.2
0.5
0.7
0.15
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.05
0.55
0.75
1.95
1.05
0.3
Ordering Information
Part Name
BB502MBS-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Aug 10, 2005 page 10 of 10
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Colophon .3.0