Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 625 12 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 BASE 2 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0) V(BR)CES 30 — — Vdc Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 40 — — Vdc Emitter–Base Breakdown Voltage (IE = 100 nAdc, IC = 0) V(BR)EBO 10 — — Vdc Collector Cutoff Current (VCE = 30 Vdc) ICES — — 500 nAdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO — — 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO — — 100 nAdc OFF CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 February, 2001 – Rev. 1 1 Publication Order Number: BC517/D BC517 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Typ Max Unit hFE 30,000 — — — Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) — — 1.0 Vdc Base–Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) — — 1.4 Vdc fT — 200 — MHz Characteristic ON CHARACTERISTICS(1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2.0%. 2. fT = |hfe| • ftest RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 10 µA 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 µA 70 50 100 µA 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 µA 8.0 100 µA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 0 1.0 1000 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 BC517 SMALL–SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 125°C 100k 70k 50k 25°C 30k 20k 10k 7.0k 5.0k -55°C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 25°C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RVC FOR VCE(sat) -55°C TO 25°C -3.0 25°C TO 125°C -4.0 VB FOR VBE -5.0 -55°C TO 25°C -6.0 5.0 7.0 10 Figure 10. “On” Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE 0.03 ZθJC(t) = r(t) • RθJCTJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJATJ(pk) - TA = P(pk) ZθJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response 1.0k 700 500 IC, COLLECTOR CURRENT (mA) () RESISTANCE (NORMALIZED) BC517 300 200 FIGURE A 1.0 ms TA = 25°C tP TC = 25°C 100 µs PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 BC517 PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 6 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BC517 Notes http://onsemi.com 7 BC517 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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