BFY50 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO39 PACKAGE (TO-205AD) Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PTOT Tstg,Tj Rj-case Rj-amb Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Collector Peak Current Total Power Dissipation @ Tamb ≤ 25°C @ Tcase ≤ 25°C Storage and Operatuing Junction Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 80V 35V 6V 1A 1.5A 0.8W 5W –65 to 200°C 35°C / W 218°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Numer 3085 Issue 1 BFY50 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CBO* Collector – Base Breakdown Voltage IC = 100µA IE = 0 80 V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 30mA IB = 0 35 V(BR)EBO* Emitter – Base Breakdown Voltage IC = 0 IE = 100µA 6 ICBO Collector Cut-off Current VCB = 60V IE = 0 50 nA TC = 100°C 2.5 µA IEBO Emitter Cut-off Current IC = 0 50 nA TC = 100°C 2.5 µA VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage hFE* VEB = 5V DC Current Gain V IC = 150mA IE = 15mA 0.14 0.2 IC = 1A IB = 0.1A 0.7 1 IC = 150mA IB = 15mA 0.95 1.3 IC = 1A IB = 0.1A 1.5 2 IC = 10mA VCE = 10V 20 40 IC = 150mA VCE = 10V 30 55 IC = 1mA VCE = 10V 15 30 Min. Typ. V V — DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter hfe Small Signal Current Gain hie Imput Impedance Test Conditions VCE = 6V IC = 1mA f = 1kHz 25 VCE = 6V IC = 10mA f = 1KHz 45 VCE = 5V IC = 10mA f = 1.KHz 180 Max. Unit — Ω 55 x10.-6 hrE Reverse Voltage Ratio VCE = 5V IC = 10mA f = 1.KHz hoe Output Admittance VCE = 5V IC = 10mA f = 1.KHz 30 µS Ccbo Collector -Base Capacitance VCB = 10V IE = 0 f = 1.MHz 10 pF fT Transistion Frequency VCE = 10V IC = 50mA 100 MHz td Delay Time IC = 150mA VCC = 10V 15 tr Rise Time IB1= 15mA 40 ts Storage Time IC = 150mA VCC = 10V 300 tf Fall Time IB1= -IB2 = 15mA 60 VBE = -2V 60 — ns Pulse Duration = 300µs, Duty Cycle = 1% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Numer 3085 Issue 1