INFINEON BGB540MIRRORBIASEDBFP540

Data sheet, BGB540, Sept. 2002
BGB540
Active Biased RF Transistor
MMIC
Wireless
Silicon Discretes
N e v e r
s t o p
t h i n k i n g .
Edition 2002-09-11
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002.
All Rights Reserved.
Attention please!
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circuits, descriptions and charts stated herein.
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Information
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BGB540
Data sheet
Revision History:
2002-09-11
Previous Version:
2001-08-16
Page
Subjects (major changes since last revision)
4-9
RF parameters and SPICE model updated
Preliminary status removed
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
Active Biased RF Transistor
BGB540
Features
•
•
•
•
•
•
Gms= 18dB at 1.8GHz
Small SOT343 package
Current easy adjustable by an external resistor
Open collector output
Typical supply voltage: 1.4-4.3V
SIEGET®-45 technology
Applications
• For high gain low noise amplifiers
• Ideal for wideband applications, cellular phones,
cordless telephones, SAT-TV and high frequency
oscillators
Bias,4
C,3
Description
SIEGET®-45 NPN Transistor with integrated
biasing for high gain low noise figure
applications. IC can be controlled using IBias
according to IC=10*IBias .
Bias
B,1
E,2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Marking
Chip
BGB540
SOT343
MCs
T0559
Data sheet
4
2002-09-11
BGB540
Maximum Ratings
Parameter
Maximum collector-emitter voltage
Maximum collector current
Symbol
Value
Unit
VCE
4.5
V
IC
80
mA
Maximum bias current
IBias
8
mA
Maximum emitter-base voltage
VEB
1.2
V
Maximum base current
IB
0.7
mA
Ptot
250
mW
Tj
150
°C
Ambient temperature
TA
-65 ... +150
°C
Storage temperature
TSTG
-65 ... +150
°C
Thermal resistance: junction-soldering point
Rth JS
300
K/W
Total power dissipation, TS < 75°C1)
Junction temperature
Notes:
For detailed symbol description refer to figure 1.
1)
TS is measured on the emitter lead at the soldering point to the PCB
IBias
IC
Bias,4
C,3
Bias
VCE
B,1
VEB
IB
E,2
Fig. 1: Symbol definition
Data sheet
5
2002-09-11
BGB540
ID
RBias
Bias-T
IBias
Bias,4
VD
RF Out
IC
C,3
Bias
B,1
RF In
E,2
N.C.
Bias-T
Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 2)
Parameter
Symbol
Maximum stable power gain
VD=2V, Ic=20mA, f=1.8GHz
min.
typ.
max.
Unit
Gms
18
dB
Insertion power gain
VD=2V, Ic=20mA
f=0.9GHz
f=1.8GHz
|S21|2
21.5
16
dB
Insertion loss
VD=2V, Ic=0mA
f=0.9GHz
f=1.8GHz
IL
21
16
dB
Noise figure (ZS=50Ω)
VD=2V, Ic=5mA
f=0.9GHz
f=1.8GHz
F50Ω
1.15
1.3
dB
Output power at 1dB gain compression
VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT
ZL=50Ω
P-1dB
Output third order intercept point
VD=2V, Ic=20mA, f=1.8GHz ZL/S=ZL/SOPT
ZL/S=50Ω
OIP3
Collector-base capacitance
VCB=2V, f=1MHz
CCB
Current ratio IC/IBias
IBias=0.5mA, VD=3V
CR
Data sheet
dBm
12
10
dBm
22
20
6
0.15
7
10
pF
13
2002-09-11
BGB540
S-Parameter VD=2V, IC=20mA (see Electrical Characteristics for conditions)
Frequency S11
[GHz]
Mag
S11
Ang
S21
Mag
S21
Ang
S12
Mag
S12
Ang
S22
Mag
S22
Ang
0.1
0.5387
-17.8
35.6280
158.9
0.0064
75.4
0.9334
-11.8
0.2
0.4744
-35.8
31.0390
142.8
0.0141
76.8
0.8357
-20.9
0.4
0.3724
-60.7
22.5520
120.2
0.0241
75.4
0.6670
-29.7
0.6
0.2992
-74.7
16.8920
108.1
0.0335
75.3
0.5672
-31.0
0.8
0.2453
-88.7
13.3320
98.2
0.0439
74.7
0.5066
-33.0
1.0
0.2205
-100.1
10.9000
91.2
0.0547
73.4
0.4675
-33.8
1.2
0.1900
-111.0
9.1938
85.5
0.0663
71.5
0.4406
-35.1
1.4
0.1765
-122.0
7.9452
80.6
0.0785
69.3
0.4209
-36.8
1.6
0.1648
-132.7
6.9615
76.3
0.0901
66.5
0.4013
-38.7
1.8
0.1660
-142.5
6.2388
72.2
0.1014
63.5
0.3822
-41.5
2.0
0.1737
-153.1
5.6320
68.2
0.1125
60.5
0.3519
-43.6
3.0
0.1966
175.9
3.8040
51.6
0.1655
44.9
0.2868
-57.0
4.0
0.2486
156.8
2.9394
36.2
0.2151
29.1
0.2398
-76.1
5.0
0.3451
136.5
2.4109
20.7
0.2439
9.1
0.1506
-111.0
6.0
0.4645
117.1
2.0318
5.5
0.2362
-7.1
0.1196
168.0
Device Current I D = f(VD, RBias)
60
50
270Ω
40
I D [mA]
680Ω
30
1.5kΩ
20
2.7kΩ
10
4.7kΩ
8.2kΩ
0
0
1
2
3
4
VD [V]
Data sheet
7
2002-09-11
BGB540
Power Gain |S21|2, Gma, Gms = f(f)
V = 3V, I = 20mA
D
Power Gain Gma, Gms = f(f)
V = 3V
C
D
40
40
35
35
30
30
Gms
25
Gma, Gms [dB]
|S21|2, Gma, Gms [dB]
0.3GHz
20
15
25
0.9GHz
20
1.9GHz
15
2.4GHz
G
2
|S21|
ma
10
10
5
5
0
0
0
1
2
3
4
5
6
0
10
20
30
40
50
60
50
60
I [mA]
Frequency [GHz]
C
Matching |S11|, |S22| = f(f)
VD = 3V, I C = 20mA
Output Compression Point
P−1dB = f(IC)
V = 3V, f = 1.8GHz, Z = 50Ω
D
L
0
20
18
−5
16
S11
14
P−1dB [dBm]
|S11|, |S22| [dB]
−10
−15
S22
12
10
8
−20
6
4
−25
2
−30
0
0
1
2
3
4
5
6
0
Data sheet
10
20
30
40
IC [mA]
Frequency [GHz]
8
2002-09-11
BGB540
SPICE Model
BGB540-Chip
4
3
R2
R1
Q2
Q1
2
Q1
T513
Q2
T513 (area factor: 0.1)
R1
2.7kΩ
R2
27kΩ
1
Transistor Chip Data T513 (Berkley-SPICE 2G.6 Syntax)
.MODEL T513 NPN(
+ IS = 8.2840e-17
+ IKF = 0.48731
+ NR = 1.0
+ NC = 1.1720
+ RE = 0.31111
+ MJE = 0.46576
+ ITF = 0.001
+ MJC = 0.30232
+ VJS = 0.75
+ XTI = 3
BF = 107.5
ISE = 1.115e-11
VAR = 19.705
RBM = 1.3
RC = 4.0
TF = 6.76e-12
PTF = 0
XCJC = 0.3
MJS = 0
FC = 0.73234)
NF = 1.0
NE = 3.19
IKR = 0.02
IRB = 0.00072983
CJE = 1.8063e-15
XTF = 0.4219
CJC = 2.34e-13
TR = 2.324E-09
XTB = 0
VAF = 28.383
BR = 5.5
ISC = 1.9237e-17
RB = 5.4
VJE = 0.8051
VTF = 0.23794
VJC = 0.81969
CJS= 0
EG = 1.11
Package Equivalent Circuit
L2
Bias
C1
L1
CCB
C3
C2
4
LBO
LBI
1
B
BGB540
Chip
LCI
LCO
3
C
2
CBE
CCE
LEI
LEO
0.36
nH
LB0
0.42
nH
LEI
0.35
nH
LEO
0.27
nH
LCI
0.56
nH
LCO
0.58
nH
L1
0.5
nH
L2
0.58
nH
CBE
120
fF
CCB
6.9
fF
CCE
134
fF
C1
90
fF
C2
120
fF
C3
15
fF
Valid up to 3GHz
E
Data sheet
LBI
9
2002-09-11
BGB540
Typical Application
Voltage
Supply
DC Bypass
L
RF Out
VBias
RBias
IC
C
IBias
4
3
BGB540
1
IC=10*IBias
2
C
This proposal demonstrates
how to use the BGB540 as a
Self-Biased Transistor. As for a
discrete Transistor matching
circuits have to be applied. A
good starting point for various
applications are the Application
Notes provided for the BFP540.
RF In
Fig. 3: Typical application circuit
Package Outline
2 ±0.2
0.9 ±0.1
B
1.3 ±0.1
0.20
M
0.1 max
B
0.3
1
2
+0.2
acc. to
DIN 6784
2.1±0.1
3
1.25 ±0.1
A
4
0.15 +0.1
-0.05
+0.1
0.6
+0.1
0.20
M
A
GPS05605
Data sheet
10
2002-09-11