Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification Complementary to 2SB1170 3.5±0.2 0.8±0.2 7.2±0.3 3.0±0.2 ■ Features ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 (TC=25˚C) Symbol Ratings Unit 7.0±0.3 3.5±0.2 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 4 A Collector current IC 2 A 0 to 0.15 Ta=25°C dissipation Junction temperature Storage temperature –55 to +150 ■ Electrical Characteristics 1.0 1.0 max. 7.2±0.3 0 to 0.15 2 3 ˚C ˚C 0.9±0.1 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter Symbol Collector cutoff current 1 150 Tstg 0.5 max. 1.1±0.1 W 1.3 Tj 2.5 0.75±0.1 15 PC 10.2±0.3 3.0±0.2 Collector power TC=25°C Unit: mm 1.0 2.0±0.2 2.5±0.2 ● 0.85±0.1 0.75±0.1 2.5±0.2 ● 1.1±0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. ● max Unit ICES VCE = 60V, VBE = 0 Conditions min typ 200 µA ICEO VCE = 30V, IB = 0 300 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 1 mA Collector to emitter voltage VCEO IC = 30mA, IB = 0 60 hFE1 VCE = 4V, IC = 0.1A 35 hFE2* VCE = 4V, IC = 1A 70 Base to emitter voltage VBE VCE = 4V, IC = 1A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.2A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A V 250 1.2 2 V V 20 MHz 0.2 µs 3.5 µs 0.7 µs Rank classification Rank Q P hFE2 70 to 150 120 to 250 1 Power Transistors 2SD1751 PC — Ta IC — VCE IC — VBE 5 VCE=4V 10 5 25˚C 5 4 Collector current IC (A) (1) 15 6 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 20 IB=100mA 80mA 3 50mA 40mA 30mA 2 20mA 10mA 1 3 2 1 5mA (2) –25˚C TC=100˚C 4 1mA 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 8 10 3000 Transition frequency fT (MHz) 25˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 100 TC=100˚C 25˚C –25˚C 30 10 3 1 0.01 0.03 10 0.1 0.3 1 3 3 IC 1ms 1 300ms 0.3 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) t=10ms ICP 100 0.1 0.01 0.03 10 103 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 3.0 VCE=10V f=1MHz TC=25˚C 300 Collector current IC (A) Non repetitive pulse TC=25˚C 2.5 0.3 Area of safe operation (ASO) 30 2.0 fT — IC 1000 TC=100˚C 1.5 VCE=4V Forward current transfer ratio hFE 10 1.0 1000 IC/IB=10 30 3 0.5 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 100 Collector current IC (A) 2 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 6 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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