Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification ■ Absolute Maximum Ratings 1.5±0.1 1.0±0.1 1.5max. 1.1max. 2.0 High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● 10.0±0.3 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 0.8±0.1 (TC=25˚C) 0.5max. 2.54±0.3 5.08±0.5 Parameter Symbol Collector to 2SD1249 base voltage 2SD1249A Collector to 2SD1249 Ratings 350 VCBO 400 Unit 1 2 1:Base 2:Collector 3:Emitter N Type Package 3 V IC 0.75 A dissipation 35 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics current 2SD1249A Collector cutoff 2SD1249 current 2SD1249A Emitter cutoff current Collector to emitter 2SD1249 voltage 2SD1249A Forward current transfer ratio 0 to 0.4 1.1 max. 5.08±0.5 150 ˚C –55 to +150 ˚C Symbol 2SD1249 R0.5 R0.5 2.54±0.3 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Collector cutoff 0.8±0.1 W 1.3 +0.4 Collector current Collector power TC=25°C 3.0–0.2 A 4.4±0.5 V 1.5 1.0±0.1 +0 5 ICP 6.0±0.3 1.5–0.4 VEBO Peak collector current 3.4±0.3 10.0±0.3 Emitter to base voltage 8.5±0.2 2.0 300 4.4±0.5 emitter voltage 2SD1249A V 14.7±0.5 Unit: mm 250 VCEO Conditions min typ max VCE = 350V, VBE = 0 1 VCE = 400V, VBE = 0 1 VCE = 150V, IB = 0 1 VCE = 200V, IB = 0 1 IEBO VEB = 5V, IC = 0 1 VCEO IC = 30mA, IB = 0 hFE1* VCE = 10V, IC = 0.3A 40 hFE2 VCE = 10V, IC = 1A 10 ICES ICEO 250 Unit mA mA mA V 300 250 Base to emitter voltage VBE VCE = 10V, IC = 1A 1.5 V Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 0.2A 1 V Transition frequency fT VCE = 10V, IC = 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 MHz 0.5 µs 2 µs 0.5 µs Rank classification Rank R Q P hFE1 40 to 90 70 to 150 120 to 250 1 Power Transistors 2SD1249, 2SD1249A PC — Ta IC — VCE IC — VBE 1.2 40 (1) 30 20 4.0 TC=25˚C VCE=10V 1.0 10 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 IB=14mA 12mA 10mA 0.8 8mA 0.6 6mA 0.4 4mA 0.2 2mA 3.2 25˚C TC=100˚C –25˚C 2.4 1.6 0.8 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 6 8 10 3000 1000 1 25˚C –25˚C 0.1 0.03 0.03 0.1 0.3 1 300 TC=100˚C 100 25˚C –25˚C 30 10 3 1 0.01 0.03 3 0.1 0.3 1 3 ICP t=10ms 1 1ms IC 0.3 300ms 0.01 1 3 10 30 100 2SD1249A 2SD1249 0.1 0.03 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.01 0.03 0.1 0.3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 3 100 0.1 0.001 0.003 10 103 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 2.4 VCE=10V f=10MHz TC=25˚C 300 Collector current IC (A) Non repetitive pulse TC=25˚C 2.0 0.3 Area of safe operation (ASO) 30 1.6 fT — IC Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.01 0.01 1.2 VCE=10V 3 0.3 0.8 1000 IC/IB=10 10 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 Collector current IC (A) 2 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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