MMST3904 TRANSISTOR(NPN) SOT–323 FEATURES Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO* IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO* IE=10µA, IC=0 5 V Collector cut-off current ICBO* VCB=60V, IE=0 60 nA Collector cut-off current ICEO* VCE=40V, IB=0 500 nA DC current gain hFE* Collector-emitter saturation voltage VCE(sat)* Base-emitter saturation voltage VBE(sat)* Transition frequency fT VCE=1V, IC=100µA 40 VCE=1V, IC=1mA 70 VCE=1V, IC=10mA 100 VCE=1V, IC=50mA 60 300 IC=10mA, IB=1mA 0.25 V IC=50mA, IB=5mA 0.3 V IC=10mA, IB=1mA 0.85 V IC=50mA, IB=5mA 0.95 V VCE=20V,IC=10mA , f=100MHz 300 MHz Collector output capacitance Cob VCB=5V, IE=0, f=1MHz 4 pF Collector output capacitance Cib VEB=0.5V, IE=0, f=1MHz 8 pF Delay time td VCC=3V, VBE(off)=0.5V IC=10mA, 35 ns Rise time tr IB1=1mA 35 ns Storage time ts 225 ns Fall time tf 75 ns VCC=3V, IC=10mA, IB1= IB2=1mA *Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５