MMBTA64 TRANSISTOR(PNP) SOT–23 FEATURES For Applications Requiring High Current Gain MARKING:2V 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current -800 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -10 V Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-10V, IC=0 -0.1 µA hFE(1) * VCE=-5V, IC=-10mA 10 K hFE(2) * VCE=-5V, IC=-100mA 20 K DC current gain Collector-emitter saturation voltage VCE(sat) * Base-emitter voltage VBE* Transition frequency fT IC=-100mA, IB=-0.1mA VCE=-5V, IC=-100mA VCE=-5V,IC=-10mA, f=100MHz -1.5 V -2 V 125 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５