STU/D320S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY V DSS Super high dense cell design for low R DS(ON). R DS(ON) (m Ω) Max ID Rugged and reliable. 20 @ VGS=10V TO-252 and TO-251 Package. 30A 30V 29 @ VGS=4.5V ESD Protected. D D G G D S STU SERIES TO-252AA(D-PAK) G S STD SERIES TO-251(l-PAK) S ABSOLUTE Symbol VDS VGS MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Drain-Source Voltage ID Drain Current-Continuous IDM EAS Gate-Source Voltage -Pulsed Avalanche Energy TC=25 °C TC=70 °C a b d a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TC=25 °C TC=70 °C Limit 30 ±20 30 24 e Units V V 120 A A A 15 mJ 32 W 20 W -55 to 150 °C 4 °C/W 50 °C/W THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Aug,11,2008 1 www.samhop.com.tw STU/D320S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage Conditions Min VGS=0V , ID=250uA 30 Drain-Source On-State Resistance gFS Forward Transconductance Max 1 ±10 VGS= ±20V , VDS=0V 1 Units V VDS=24V , VGS=0V VDS=VGS , ID=250uA RDS(ON) Typ 3 A uA 1.8 16 20 V m ohm VGS=4.5V , ID=12.5A 22 29 m ohm VDS=10V , ID=15A 12 S VDS=15V,VGS=0V f=1.0MHz 430 140 88 pF pF pF 8 13 16 30 8 ns ns ns ns nC 4 nC 0.9 2.5 nC nC VGS=10V , ID=15A c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=15A,VGS=10V VDS=15V,ID=15A,VGS=4.5V VDS=15V,ID=15A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage b VSD VGS=0V,IS=2.2A 0.8 2.2 1.3 A V Notes _ sec. a.Surface Mounted on FR4 Board,t<10 _ 2%. _ 300us, Duty Ctcle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,RG=25Ω,VDD=30V,VGS=10V .(See Figure13) e.Package current limitation is 20A. Aug,11,2008 2 www.samhop.com.tw STU/D320S Ver 1.0 40 20 VGS=10V VGS=4. 5V VGS=5V VGS=4V I D, Drain Current(A) I D, Drain Current(A) 32 24 VGS=3. 5V 16 VGS=3V 8 16 12 8 0 25C 0 0 0. 5 1 1. 5 2 2. 5 3 0 V DS, Drain-to-Source Voltage(V) 50 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 40 VGS=4. 5V 20 VGS=10V 10 1 8 16 24 32 1. 4 2. 1 2. 8 3. 5 4. 2 Figure 2. Transfer Characteristics 60 30 0. 7 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 -55C Tj=125C 4 1.4 1.2 V G S =4.5V I D =12.5A 1.0 0.0 40 V G S =10V I D =15A 1.6 0 50 25 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.3 VDS=VGS I D=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,11,2008 3 www.samhop.com.tw STU/D320S Ver 1.0 60 20. 0 Is, Source-drain current(A) I D=15A R DS(on)(m Ω) 50 40 75C 125C 30 20 25C 10 0 0 2 4 6 8 0. 6 0. 8 1. 0 1. 2 1. 4 Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) C, Capacitance(pF) 0. 4 V SD, Body Diode Forward Voltage(V) Ciss 400 300 200 Coss 100 Crss 0 5 10 15 20 25 VDS=15V I D=15A 8 6 4 2 0 30 0 1 3 2 4 5 6 7 8 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 9 I D, Drain Current(A) 500 100 60 Tr TD( on) TD( of f ) Tf 10 VDS=15V, I D=1A 100 R 1 6 10 60 100 1 0.1 300 600 Rg, Gate Resistance(Ω) DS ( ) ON L im it 10 1m 10 m DC s 10 VGS=10V 1 75C 125C V GS, Gate-to-Source Voltage(V) 500 Switching Time(ns) 25C 1. 0 10 600 0 10. 0 0u s s V G S =10V S ingle P ulse T A =25 C 1 10 30 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Aug,11,2008 4 www.samhop.com.tw STU/D320S Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Aug,11,2008 5 www.samhop.com.tw STU/D320S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 Aug,11,2008 6 www.samhop.com.tw STU/D320S Ver 1.0 TO-252 E A b3 C2 L3 E1 D H b2 L4 e b L2 A1 L L1 C2 b b2 b3 L2 A1 L4 L L1 L3 10 483 0.814 864 232 0.508 6.000 6.400 4.902 2.290 9.601 0.010 0.066 1.397 2.743 1.100 387 0.584 0.889 1.092 436 REF. 00 6.604 5.004 BSC 210 0.127 0.940 1.651 REF. REF. 7 0.019 32 4 6 0.020 36 0.193 0.090 78 0.0004 0.026 0.055 0.108 0.043 4 0.023 0.035 43 4 REF. 4 0.197 BSC 402 0.005 0.037 0.065 REF. REF. Aug,11,2008 7 www.samhop.com.tw STU/D320S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape P2 D1 B0 E E2 T E1 P1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 B0 K0 6.96 ²0.1 10.49 ²0.1 2.79 ²0.1 D0 D1 E ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 TO-252 Reel E1 E2 P0 P1 P2 T 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Aug,11,2008 8 www.samhop.com.tw