Transistors SMD Type PNP Transistors 2SA1483 ■ Features 1.70 ● High transition frequency 0.1 ● Low collector output capacitance ● Complementary to 2SC3803 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -200 Base Current IB -50 Collector Power Dissipation PC 500 TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature range Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -0.5 mA，IB= 0 -45 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -45 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 V Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10 mA -0.3 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10 mA -1 Input impedance (real part) Re(hie) VCB= -10V, IE=10mA,f=200MHz DC current gain hFE Turn-on time ton Storage time tstg Fall time 120 VCE= -1V, IC= -10mA 40 VCE= -3V, IC= -200mA 20 V Ω 240 ns 250 See Test Circuit. 30 Cob Transition frequency uA 40 tf Collector output capacitance Unit VCB= -10V, IE= 0,f=1MHz VCE= -10V, IC= -10mA fT 3.5 100 200 5 pF MHz ■ Classification of hfe(1) Type 2SA1483-R 2SA1483-O 2SA1483-Y Range 40-80 70-140 120-240 Marking WR* WO* WY* www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SA1483 Switching Time Test Circuit OUTPUT 500 Ω 50 Ω 0 −10 V 200 Ω INPUT 680 Ω VCC = −12 V VBB =3V DUTY CYCLE ≤ 2% 1 μs ■ Typical Characterisitics IC – VCE −5.0 −160 Ta = 25°C −3.0 −2.0 −120 −1.5 −1.0 −80 −40 −1 −2 −3 −4 −5 −6 −8.0 −200 Common emitter Ta = 100°C −4.0 −160 Collector-emitter saturation voltage VCE (sat) (V) 0 IC – VCE (mA) VCE = −3 V 300 Ta = 100°C 25 100 −55 50 30 −0.3 IB = −0.2 mA Collector-emitter voltage VCE (V) Collector current IC Common emitter 500 10 −0.1 −0.5 0 0 −1 −10 −30 Collector current IC (mA) −100 VCE (sat) – IC −0.5 −0.3 −3 Common emitter IC/IB = 10 −0.1 Ta = 100°C −0.05 −0.03 25 −55 −0.01 −0.1 −0.3 −2.0 −1 −3 −10 −30 Collector current IC (mA) −100 −120 VBE (sat) – IC −1.0 −0.6 −80 IB = −0.2 mA −40 0 0 0 −1 −2 −3 −4 −5 Collector-emitter voltage VCE (V) 2 DC current gain hFE Common emitter −10 www.kexin.com.cn −6 Base-emitter saturation voltage VBE (sat) (V) Collector current IC (mA) −200 hFE – IC 1000 −5 −3 Common emitter IC/IB = 10 Ta = −55°C −1 −0.5 25 −0.3 −0.1 −0.1 100 −0.3 −1 −3 −10 −30 Collector current IC (mA) −100 Transistors SMD Type PNP Transistors 2SA1483 ■ Typical Characterisitics IC – VCE Ta = −55°C −4.0 −160 −3.0 −120 −2.0 −1.5 −80 −1.0 IB = −0.5 mA −40 0 0 0 −1 −2 −3 −4 −5 Collector-emitter voltage VCE (V) PC (W) Common emitter −6.0 Collector power dissipation Collector current IC (mA) −200 PC – Ta 1.2 −6 1.0 (1) Mounted on a ceramic 2 substrate (250 mm × 0.8 t) ① (2) No heat sink 0.8 0.6 ② 0.4 0.2 0 0 20 40 60 80 100 Ambient temperature Ta 120 140 160 (°C) www.kexin.com.cn 3