Transistors SMD Type NPN Transistors 2SD1801 TO-252 Unit: mm +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 ■ Features +0.1 2.30 -0.1 +0.8 0.50 -0.7 3 .8 0 ● Low collector-to-emitter saturation voltage. 2.3 +0.15 5.55 -0.15 0.127 max 0.60-+ 0.1 0.1 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 ● Fast switching speed. ● Complementary to 2SB1201 +0.15 4 .60 -0.15 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 4 Collector Power Dissipation Tc=25°C 15 PC Junction Temperature Storage Temperature Range 0.8 TJ 150 Tstg -55 to 150 Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 V Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50 mA 0.15 0.4 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50 mA 0.9 1.2 DC current gain hFE Turn-ON Time ton Storage Time tstg Fall Time VCE= 2V, IC= 100 mA 100 VCE= 2V, IC= 1.5 A 40 Cob Transition frequency fT uA V 560 60 See specified Test Circuit 550 ns 30 tf Collector Output capacitance Unit VCB= 10V, IE= 0,f=1MHz 12 pF VCE= 10V, IC = 50mA 150 MHz ■ Classification of hfe(1) Type 2SD1801-R 2SD1801-S 2SD1801-T 2SD1801-U Range 100-200 140-280 200-400 280-560 www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1801 Switching Time Test Circuit ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SD1801 ■ Typical Characterisitics www.kexin.com.cn 3